32 EEPROM 2,047

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28C512PM-20	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512JZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512JMB-15	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C010FMB-15	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel				DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	10.93 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	21.08 mm	150 ns	5	YES
X28C512RM-12	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-XDSO-G32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		120 ns		YES
X28C512J-20	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512F-90	Renesas Electronics	EEPROM	COMMERCIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO			DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512JMB-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C010DI-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel				DUAL	R-CDIP-T32	5.5 V	5.92 mm	100000 Write/Erase Cycles	15.24 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	150 ns	5	YES
X28C512JZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C513JZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512RI-20	Renesas Electronics	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO			DUAL	R-XDSO-G32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
IDT78C18A120L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD		QUAD	R-XQCC-N32					Not Qualified		16384 bit				e0			.0009 Amp		120 ns		YES
X28C010N-15	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO			QUAD	R-XQCC-N32					Not Qualified		1048576 bit			256				.0005 Amp		150 ns		YES
X28C512FM-90	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C513EI-20	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO			QUAD	R-CQCC-N32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.425 mm		10 ms	524288 bit	4.5 V						.0005 Amp	13.965 mm	200 ns	5	YES
X28C513EM-12	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO			QUAD	R-CQCC-N32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.425 mm		10 ms	524288 bit	4.5 V						.0005 Amp	13.965 mm	120 ns	5	YES
X28C512PI-20	Renesas Electronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO			DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
IDT78C18A75LB	Renesas Electronics	EEPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	125 Cel			2KX8	2K	-55 Cel	YES	TIN LEAD		QUAD	R-XQCC-N32					Not Qualified		16384 bit				e0			.0009 Amp		75 ns		YES
X28C512JM-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512PMB-20	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
IDT78C18A150L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD		QUAD	R-XQCC-N32					Not Qualified		16384 bit				e0			.0009 Amp		150 ns		YES
X28C512PMB-90	Renesas Electronics	EEPROM	MILITARY	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-PDIP-T32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
HN58C1001T-12	Renesas Electronics	EEPROM	COMMERCIAL	32	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				.5 mm	70 Cel			128KX8	128K	0 Cel		TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.27 mm		8 mm	Not Qualified		1048576 bit	4.5 V			e0				12.4 mm	120 ns	5
X28C512JM-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			QUAD	R-PQCC-J32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512RI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO			DUAL	R-XDSO-G32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
X28C512FMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	FLATPACK	FL32,.4		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO			DUAL	R-CDFP-F32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.055 mm		10 ms	524288 bit	4.5 V	LG_MAX					.0005 Amp	21.08 mm	120 ns	5	YES
X28C513J-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C513JI-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512FI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO			DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		150 ns		YES
HN58V257AT-12E	Renesas Electronics	EEPROM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	EEPROMs		.5 mm	70 Cel			32KX8	32K	0 Cel	NO		YES	DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified	10 ms	262144 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	12.4 mm	120 ns	3	YES
X28C010N-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO			QUAD	R-XQCC-N32					Not Qualified		1048576 bit			256				.0005 Amp		120 ns		YES
X28C010FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			128KX8	128K	-55 Cel	NO			DUAL	R-XDFP-F32					Not Qualified		1048576 bit			256				.0005 Amp		250 ns		YES
X28C512FI-20	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO			DUAL	R-XDFP-F32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		200 ns		YES
X28C512DM	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO			DUAL	R-CDIP-T32	5.5 V	5.9 mm	100000 Write/Erase Cycles	15.24 mm		10 ms	524288 bit	4.5 V	LG_MAX					.0005 Amp	42.95 mm	90 ns	5	YES
X28C512D-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			DUAL	R-CDIP-T32	5.5 V	5.9 mm	100000 Write/Erase Cycles	15.24 mm		10 ms	524288 bit	4.5 V	LG_MAX					.0005 Amp	42.95 mm	150 ns	5	YES
X28C513EM-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO			QUAD	R-CQCC-N32	5.5 V	3.05 mm	100000 Write/Erase Cycles	11.425 mm		10 ms	524288 bit	4.5 V						.0005 Amp	13.965 mm	150 ns	5	YES
X28C010D-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel				DUAL	R-CDIP-T32	5.5 V	5.92 mm	100000 Write/Erase Cycles	15.24 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	150 ns	5	YES
X28C010DM-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel				DUAL	R-CDIP-T32	5.5 V	5.92 mm	100000 Write/Erase Cycles	15.24 mm		10 ms	1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
X28C512RMB-25	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-XDSO-G32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		250 ns		YES
HN58V1001P-25	Renesas Electronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE			10	2.54 mm	70 Cel			128KX8	128K	0 Cel		TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified	15 ms	1048576 bit	2.7 V	10000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 128 BYTE PAGE WRITE		e0				41.9 mm	250 ns	3
HN58V257AT-12SR	Renesas Electronics	EEPROM	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			32KX8	32K	-20 Cel		TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm		8 mm	Not Qualified		262144 bit	2.7 V			e0				12.4 mm	120 ns	3
X28C512RMB-90	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO			DUAL	R-XDSO-G32			100000 Write/Erase Cycles		Not Qualified	10 ms	524288 bit			128				.0005 Amp		90 ns		YES
X28C512JZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
78C18A200L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD		QUAD	R-XQCC-N32					Not Qualified		16384 bit				e0			.0009 Amp		200 ns		YES
X28C512JIZ-15T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C010RI-20	Renesas Electronics	EEPROM		32	SOP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	SMALL OUTLINE	SOP32,.56		100	1.27 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel				DUAL	R-CQCC-N32	5.5 V	4.191 mm	100000 Write/Erase Cycles	11.176 mm		10 ms	1048576 bit	4.5 V		256				.0005 Amp	21.082 mm	200 ns	5	YES
X28C512JIZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO			QUAD	R-PQCC-J32	5.5 V	3.55 mm	100000 Write/Erase Cycles	13.97 mm		10 ms	524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.