6 EEPROM 150

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
DS28E01P-100/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	DUAL	R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles	3.937 mm	Not Qualified	1-WIRE	1024 bit	2.8 V	e0			4.2926 mm
DS2433X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	4096 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)	EEPROMs		1.1 mm	85 Cel	4KX1	4K	-40 Cel		BOTTOM	R-PBGA-B6	1	6 V	.597 mm	50000 Write/Erase Cycles	2.54 mm	Not Qualified	1-WIRE	4096 bit	2.8 V			240	2.82 mm
DS2433X-S#T	Maxim Integrated	EEPROM	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	4096 words	5		1	GRID ARRAY, VERY THIN PROFILE				1.1 mm	85 Cel	4KX1	4K	-40 Cel		BOTTOM	R-PBGA-B6		6 V	.597 mm		2.54 mm	Not Qualified	1-WIRE	4096 bit	2.8 V		NOT SPECIFIED	NOT SPECIFIED	2.82 mm
DS28E01X-100	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	1024 words			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	1KX1	1K	-40 Cel		BOTTOM	R-PBGA-B6		5.25 V	.67 mm		1.75 mm	Not Qualified	1-WIRE	1024 bit	2.8 V				1.98 mm
DS2432X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	1024 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,40/20	EEPROMs	10	.5 mm	85 Cel	1KX1	1K	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles	1.75 mm	Not Qualified	1-WIRE	1024 bit	2.8 V	e0			1.98 mm
DS2433X#T	Maxim Integrated	EEPROM	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	4096 words	5		1	GRID ARRAY, VERY THIN PROFILE				1.1 mm	85 Cel	4KX1	4K	-40 Cel		BOTTOM	R-PBGA-B6		6 V	.597 mm		2.54 mm	Not Qualified	1-WIRE	4096 bit	2.8 V		NOT SPECIFIED	NOT SPECIFIED	2.82 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.