6 EEPROM 150

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
93AA56BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	8	EEPROMs	200	.95 mm	85 Cel			128X16	128	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	1.8 V		e3	40	260	.000001 Amp	2.9 mm
25LC040AT-E/OT16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	125 Cel			512X8	512	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm		5 ms	SPI	4096 bit	2.5 V		e3			.000005 Amp	2.9 mm	5
93AA46AT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)			DUAL		SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V		e3	40	260	.000001 Amp	2.9 mm
24AA025T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260	.000001 Amp	2.9 mm	2.5
DS28E22P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		2048 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	2048 bit	2.97 V		e3	30	260		4.29 mm
24LC32AFT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3	40	260	.000001 Amp	2.9 mm	5
DS2432P/T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0				3.94 mm
DS2432P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e3	30	260		3.94 mm
DS28E01P-100	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			DUAL			R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.937 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0				4.2926 mm
DS28E01P-100+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		3.94 mm
LE24L042CS-B-SH	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				20	.5 mm	85 Cel			512X8	512	-40 Cel		Tin/Silver/Copper (Sn/Ag/Cu)			BOTTOM			R-PBGA-B6	1	3.6 V	.5 mm		.4 MHz	1.06 mm		10 ms	I2C	4096 bit	1.7 V	20 YEAR DATA RETENTION	e1				1.5 mm
DS28E25P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	4096 bit	2.97 V		e3	30	260		4.29 mm
LE2464CXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2.5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER			BOTTOM			R-PBGA-B6	1	3.6 V	.33 mm		.4 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V		e1	30	260		1.2 mm
24LC32AFT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm	5
93AA66AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	YES	2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V		e3	40	260	.000001 Amp	2.95 mm
DS28E15P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		512 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V		e3	30	260		4.29 mm
DS28E15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	512 bit	2.97 V		e3	30	260		3 mm
24LC02BHT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		e3	40	260	.000001 Amp	2.9 mm	4.5
DS2433X-Z01	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		512 words	5			8	GRID ARRAY						85 Cel			512X8	512	-40 Cel		TIN LEAD			BOTTOM			R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e0				2.85 mm
93LC66BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3	YES	3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V		e3	40	260	.000001 Amp	2.95 mm
24LC025T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		e3	40	260	.000005 Amp	2.9 mm	5
DS2432P	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240		3.94 mm
DS2432P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e3	30	260		3.94 mm
DS2432P-100-011	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		C BEND	SERIAL			256 words			3/5	4	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel					DUAL			R-PDSO-C6				50000 Write/Erase Cycles			Not Qualified			1024 bit
DS2432P-100-011+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		C BEND	SERIAL			256 words			3/5	4	SMALL OUTLINE	SOC6,.17		EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1			50000 Write/Erase Cycles			Not Qualified			1024 bit			e3	30	260
DS28E05P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		64 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V		e3	30	260		4.29 mm
93AA46AE48T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel		3-STATE	128X8	128	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm		6 ms	3-WIRE	1024 bit	2.5 V		e3			.000001 Amp	2.9 mm	3
93LC66BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3		3/5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	2 MHz	1.55 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V		e3		260	.000001 Amp	2.9 mm
AT24CS16-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	6	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	85 Cel	NO		2048X8	2048	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G6		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V		e3			.000001 Amp	2.9 mm	5
DS2430AV	Maxim Integrated	EEPROM	INDUSTRIAL	6	LSOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS		C BEND	SERIAL	ASYNCHRONOUS		32 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE	SOC6,.17		EEPROMs		1.27 mm	85 Cel			32X8	32	-40 Cel		TIN LEAD			DUAL			R-PDSO-C6		6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e0				3.94 mm
DS2431X+U	Analog Devices	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		256 words	3.3		3/5	4	GRID ARRAY	BGA6,2X3,40/20		EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	TIN SILVER COPPER NICKEL			BOTTOM		HARDWARE	R-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e2	30	260		1.68 mm		NO
DS28E05P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		64 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	64 bit	2.75 V		e3	30	260		4.29 mm
24AA014T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37			200	.95 mm	85 Cel			128X8	128	-40 Cel			1010DDDR		DUAL	1	HARDWARE	R-PDSO-G6		5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V					.000001 Amp	2.9 mm	2.5
DS28EL25Q+T	Maxim Integrated	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel		MATTE TIN			DUAL			S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	4096 bit	1.71 V		e3	30	260		3 mm
BRCB064GWZ-3E2	ROHM	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3.9 mA	8192 words			1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,16		EEPROMs	40	.4 mm	85 Cel			8KX8	8K	-40 Cel			1010D00R		BOTTOM		HARDWARE	R-PBGA-B6		5.5 V	.36 mm	1000000 Write/Erase Cycles	.4 MHz	1 mm	Not Qualified	5 ms	I2C	65536 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	1.5 mm
BU9833GUL-WE2	ROHM	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		1.8/5	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel			1010D00R		BOTTOM		HARDWARE	R-PBGA-B6		5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	1.27 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	1.5 mm
25AA020AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V		e3		260	.000001 Amp	2.9 mm	2.5
25LC010AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel		3-STATE	128X8	128	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	ALSO OPERATES AT 2.5V TO 4.5V @5MHZ	e3		260	.000001 Amp	2.9 mm	5
34AA02T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.55 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260	.000001 Amp	2.9 mm	2.5
93C46BT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	2 ms	MICROWIRE	1024 bit	4.5 V		e3			.000001 Amp	2.95 mm
93LC86AT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	125 Cel		TOTEM POLE	2KX8	2K	-40 Cel		Matte Tin (Sn)			DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		e3	40	260	.000005 Amp	2.95 mm
93LC86AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		TOTEM POLE	2KX8	2K	-40 Cel		Matte Tin (Sn)			DUAL	1	SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	3 MHz	1.63 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V		e3	40	260	.000001 Amp	2.95 mm
DS2704G+	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS2704G+T&R	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37		EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed			DUAL		SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS28E35P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	1024 bit	2.97 V		e3	30	260		4.29 mm
DS28E25P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE					1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	4096 bit	2.97 V		e3	30	260		4.29 mm
DS28E01X-100-S	Analog Devices	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words				1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD			BOTTOM			R-PBGA-B6		5.25 V	.67 mm			1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V		e0				1.98 mm
DS28E02Q+T&R	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	1.8		1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.65 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.