6 EEPROM 150

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
DS28E02P+	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed		DUAL		R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V			e3	30	260		3.94 mm
DS28E02Q+U	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	3.65 V	.8 mm			3 mm			1-WIRE	1024 bit	1.75 V			e3	30	260		3 mm
DS28E01Q-100+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	30	260		3 mm
DS28E35P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3		1	SMALL OUTLINE					1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	1024 bit	2.97 V			e3	30	260		4.29 mm
DS28E01Q-100+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	1024 bit	2.8 V			e3	30	260		3 mm
DS28E02P+T&R	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed		DUAL		R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V			e3	30	260		3.94 mm
DS28E25Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	4096 bit	2.97 V			e3	30	260		3 mm
DS28EL15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		512 words	1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	512 bit	1.71 V			e3	30	260		3 mm
DS28E22Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		2048 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed		DUAL		S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	2048 bit	2.97 V			e3	30	260		3 mm
CAT93C66TBI-T3	Onsemi	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		16	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH		8		100	.95 mm	85 Cel			256X16	256	-40 Cel		TIN		DUAL		R-PDSO-G6	1	5.5 V	1.45 mm		2 MHz	1.6 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION		e3	30	260		2.9 mm
CAT93C86BC6ATR	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		1024 words	5		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.4 mm	85 Cel			1KX16	1K	-40 Cel				BOTTOM		R-PBGA-B6		5.5 V	.41 mm		4 MHz	.96 mm			MICROWIRE	16384 bit	1.8 V							1.17 mm
NV24C256C6PTG	Onsemi	EEPROM		6	VFBGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	2 mA	32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,14			100	.35 mm	105 Cel			32KX8	32K	-40 Cel			1010D00R	BOTTOM	HARDWARE	R-XBGA-B6		5.5 V	.35 mm	1000000 Write/Erase Cycles	1 MHz	.976 mm		5 ms	I2C	262144 bit	1.7 V		64				.000002 Amp	1.106 mm	5
N24C256C6DYT3G	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		32768 words	5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.35 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		BOTTOM		R-PBGA-B6	1	5.5 V	.3 mm		1 MHz	.96 mm		5 ms	I2C	262144 bit	1.7 V			e3	30	260		1.09 mm
LE2416RLBXA-SH	Onsemi	EEPROM	INDUSTRIAL	6	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		5 mA	2048 words		1.8/3.3	8	GRID ARRAY, FINE PITCH	BGA6,2X3,16		EEPROMs	20	.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B6	1			100000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				e1	30	260	.000002 Amp
LE2416RLBXA	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			2KX8	2K	-40 Cel				BOTTOM		R-PBGA-B6		3.6 V	.33 mm		.4 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V							1.2 mm
LE2416DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
LE24LA322CS-TL2	Onsemi	EEPROM	INDUSTRIAL	6	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	4096 words		2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			4KX8	4K	-40 Cel			1010000R	BOTTOM	HARDWARE					100000 Write/Erase Cycles			Not Qualified		I2C	32768 bit							.000002 Amp
LE24LA162CB	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY						85 Cel			2KX8	2K	-40 Cel				BOTTOM		R-PBGA-B6		3.6 V			.4 MHz			10 ms	I2C	16384 bit	1.7 V
LE24LB642CS	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			8KX8	8K	-40 Cel			1010000R	BOTTOM	HARDWARE	R-PBGA-B6		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	65536 bit	1.7 V						.000002 Amp
LE24LA322CS	Onsemi	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			4KX8	4K	-40 Cel			1010000R	BOTTOM	HARDWARE	R-PBGA-B6		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	32768 bit	1.7 V						.000002 Amp
LE2464DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
LE2416RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V			e1	30	260		1.2 mm
LE2464RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V			e1	30	260		1.2 mm
LE24LB642CS-TL	Onsemi	EEPROM	INDUSTRIAL	6	BGA		PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL		3 mA	8192 words		2/3.3	8	GRID ARRAY	BGA6(UNSPEC)		EEPROMs	10		85 Cel			8KX8	8K	-40 Cel			1010000R	BOTTOM	HARDWARE					100000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.000002 Amp
LE2432RDXATDG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4096 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			4KX8	4K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	32768 bit	1.7 V			e1	30	260		1.2 mm
LE24162LBXA-SH	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS	5 mA	2048 words	2.5	1.8/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,16		EEPROMs	20	.4 mm	85 Cel			2KX8	2K	-40 Cel		TIN SILVER COPPER	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B6	1	3.6 V	.33 mm	100000 Write/Erase Cycles	.4 MHz	.8 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e1	30	260	.000002 Amp	1.2 mm
LE2464CXBTBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM		R-PBGA-B6		3.6 V	.3 mm		.4 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V							1.2 mm
LE2432DXATBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4096 words	2		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			4KX8	4K	-40 Cel		TIN SILVER COPPER		BOTTOM		R-PBGA-B6	1	3.6 V	.33 mm		1 MHz	.8 mm		5 ms	I2C	32768 bit	1.7 V			e1	30	260		1.2 mm
LE2464CXCTBG	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			8KX8	8K	-40 Cel				BOTTOM		R-PBGA-B6		3.6 V	.45 mm		.4 MHz	.8 mm		5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		1.2 mm
LE24162LBXA	Onsemi	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		2048 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel			2KX8	2K	-40 Cel				BOTTOM		R-PBGA-B6		3.6 V	.33 mm		.4 MHz	.8 mm		5 ms	I2C	16384 bit	1.7 V							1.2 mm
ST1331-W2/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
ST1305	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		24 words	5		8	UNCASED CHIP									24X8	24					UPPER		X-XUUC-N6							Not Qualified			192 bit					NOT SPECIFIED	NOT SPECIFIED			5
ST1331	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified			272 bit					NOT SPECIFIED	NOT SPECIFIED			5
ST14C02C	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP								OPEN-DRAIN	256X8	256					UPPER		X-XUUC-N6		5.5 V					Not Qualified			2048 bit	3 V								3
ST1333	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified			272 bit					NOT SPECIFIED	NOT SPECIFIED			5
ST1333-W4/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
ST14C02C-D15	STMicroelectronics	EEPROM	COMMERCIAL	6		UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	3.3/5	8	UNCASED CHIP	MODULE,6LEAD,.45		EEPROMs	10		70 Cel			256X8	256	0 Cel			1010000R	UPPER		X-XUUC-N	1	5.5 V		1000000 Write/Erase Cycles	.1 MHz		Not Qualified	10 ms	I2C	2048 bit	3 V						.0001 Amp
ST1331-D10/XXYY	STMicroelectronics	EEPROM		6		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words	5		8	MICROELECTRONIC ASSEMBLY									34X8	34			GOLD		UNSPECIFIED		X-XXMA-X6							Not Qualified	5 ms	I2C	272 bit				e4
ST1333-D10/XXYY	STMicroelectronics	EEPROM		6		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words	5		8	MICROELECTRONIC ASSEMBLY									34X8	34			GOLD		UNSPECIFIED		X-XXMA-X6							Not Qualified	5 ms	I2C	272 bit				e4
ST1333-W2/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
ST1331-W4/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words	5		8	UNCASED CHIP									34X8	34					UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
DS2433X-ZS	Maxim Integrated	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		512 words	5		8	GRID ARRAY						85 Cel			512X8	512	-40 Cel		TIN LEAD		BOTTOM		R-PBGA-B6		6 V	.864 mm			1.91 mm	Not Qualified		1-WIRE	4096 bit	2.8 V			e0				2.85 mm
DS2431X+	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20		EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn)		BOTTOM	HARDWARE	S-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	30	260		1.68 mm		NO
DS28E01P-100+T&R	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel				DUAL		R-XDSO-C6		5.25 V	1.5 mm	50000 Write/Erase Cycles		3.93 mm	Not Qualified		1-WIRE	1024 bit	2.8 V				30	260		4.62 mm
DS2432P-W07+3	Maxim Integrated	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5		1	SMALL OUTLINE					1.27 mm	85 Cel			1KX1	1K	-40 Cel				DUAL		R-PDSO-C6		5.25 V	1.5 mm			3.76 mm			1-WIRE	1024 bit	2.8 V				NOT SPECIFIED	NOT SPECIFIED		3.94 mm
DS2432X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		1024 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA8,2X4,40/20		EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM		R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V			e0				1.98 mm
DS2431X	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20		EEPROMs	40	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM		S-PBGA-B6		5.25 V	.77 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0				1.68 mm
DS2433X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		4096 words	5	3/5	1	GRID ARRAY, VERY THIN PROFILE	BGA6(UNSPEC)		EEPROMs		1.1 mm	85 Cel			4KX1	4K	-40 Cel				BOTTOM		R-PBGA-B6	1	6 V	.597 mm	50000 Write/Erase Cycles		2.54 mm	Not Qualified		1-WIRE	4096 bit	2.8 V					240		2.82 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.