63 EEPROM 60

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
TC58NVG0S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm			1073741824 bit	2.7 V						11 mm		3
TC58NVG0S3EBAI4JRH	Kioxia Holdings	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm			1073741824 bit	2.7 V						11 mm		3
TC58NVG1S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	268435456 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	10 mm	Not Qualified		2147483648 bit	2.7 V	2K			NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TC58NVG1S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm	Not Qualified		2147483648 bit	2.7 V	2K			NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58NVG2S3EBAI5	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	128K	30 mA	536870912 words	3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	10 mm	Not Qualified		4294967296 bit	2.7 V	2K			NAND TYPE	.00005 Amp	13 mm	25 ns	3	NO
TH58NYG4S0FBAID	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm	10 mm			17179869184 bit	1.7 V						11 mm		3
TC58NVM9S3EBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	67108864 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm	Not Qualified		536870912 bit	2.7 V	2K			NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC582562AXB	Toshiba	EEPROM	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	30 mA	33554432 words	3.3	NO	3/3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	Flash Memories	.8 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63		3.6 V	1.2 mm	9 mm	Not Qualified		268435456 bit	2.7 V	512	e0		NAND TYPE	.0001 Amp	11 mm	35 ns	3	NO
TC58DVG02D5BAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm	Not Qualified		1073741824 bit	2.7 V	2K			NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TH58NVG4S0FBAID	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2GX8	2G	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm	10 mm			17179869184 bit	2.7 V						11 mm		3
TC58DYG02D5BAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm	9 mm	Not Qualified		1073741824 bit	1.7 V	2K			NAND TYPE	.00005 Amp	11 mm	25 ns	3	NO
TC58DVG02A5BAJ4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			134217728 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	128MX8	128M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm			1073741824 bit	2.7 V						11 mm		3
TH58NYG3S0HBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm	9 mm			8589934592 bit	1.7 V						11 mm		3
TC58NVG2S0FBAI4	Toshiba	EEPROM	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	256K	30 mA	536870912 words	3.3	YES	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm	Not Qualified		4294967296 bit	2.7 V	4K			NAND TYPE	.00005 Amp	11 mm	25 ns	3	YES
KFWAGH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	17179869184 bit		2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
KFWAGH6U4M-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	50 mA	1073741824 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX16	1G	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	17179869184 bit		2K	e3		NAND TYPE	.00016 Amp		76 ns	2.7	NO
KFM1216Q2A-DEB5	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES		CMOS	BALL	PARALLEL		64K	20 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-XBGA-B63	1				Not Qualified		536870912 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFM1G16Q2A-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFN2G16Q2A-DED80	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFN2G16Q2A-DED8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
K9K2G08R0A-JCB0	Samsung	EEPROM CARD	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	256MX8	256M	0 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		2K	e3		NAND TYPE	.0001 Amp		45 ns	2.7	NO
K9K2G08R0A-JIB0T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		2K	e3		NAND TYPE	.0001 Amp		45 ns	2.7	NO
KFM1216Q2A-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-XBGA-B63	1				Not Qualified		536870912 bit		1K	e3		NAND TYPE	.00005 Amp		11.5 ns	2.7	NO
KFM1216Q2A-DEB6	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-XBGA-B63	1				Not Qualified		536870912 bit		1K	e3		NAND TYPE	.00005 Amp		11.5 ns	2.7	NO
KFG1G16Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K	e1	260	NAND TYPE	.00005 Amp		70 ns	2.7	NO
KFG4GH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified	INDEPENDENT	4294967296 bit		2K	e1	260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFG1G16U2C-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	65 mA	67108864 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit		1K	e3		NAND TYPE	.00008 Amp		70 ns	2.7	NO
KFG1216Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified		536870912 bit		1K	e1	260	NAND TYPE	.00005 Amp		9 ns	2.7	NO
KFM1G16Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K		260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFG1G16Q2C-AEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K	e1	260	NAND TYPE	.00005 Amp		9 ns	2.7	NO
KFM1G16Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K		260	NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFWAGH6Q4M-DEB60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	17179869184 bit		2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
KFG1G16Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K		260	NAND TYPE	.00005 Amp		70 ns	2.7	NO
KFG1G16Q2C-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit		1K		260	NAND TYPE	.00005 Amp		11 ns	2.7	NO
KFG1216Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B63	3				Not Qualified		536870912 bit		1K		260	NAND TYPE	.00005 Amp		11 ns	2.7	NO
KFWAGH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	17179869184 bit		2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
KFM1G16Q2A-DED60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFH8GH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	8589934592 bit		2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
KFH8GH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	8589934592 bit		2K	e3		NAND TYPE	.0001 Amp		76 ns	2.7	NO
K9K2G08R0A-JCB0T	Samsung	EEPROM CARD	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	70 Cel	256MX8	256M	0 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		2K	e3		NAND TYPE	.0001 Amp		45 ns	2.7	NO
K9K2G08R0A-JIB0	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		2K	e3		NAND TYPE	.0001 Amp		45 ns	2.7	NO
KFN2G16Q2A-DED6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFM1G16Q2A-DED6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
K9K2G08R0A-JIB0T00	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		2K	e3		NAND TYPE	.0001 Amp		45 ns	2.7	NO
KFH8GH6U4M-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	50 mA	536870912 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified	INDEPENDENT	8589934592 bit		2K	e1	260	NAND TYPE	.00016 Amp		76 ns	2.7	NO
KFG4GH6U4M-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	268435456 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-40 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified	INDEPENDENT	4294967296 bit		2K	e3		NAND TYPE	.00008 Amp		76 ns	2.7	NO
KFN2G16Q2A-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO
KFM1G16Q2A-DED80	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit		1K	e3		NAND TYPE	.00005 Amp		76 ns	2.7	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.