63 EEPROM 60

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Parallel or Serial	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Boot Block	Memory Density	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Maximum Access Time	Programming Voltage (V)	Data Polling
KFM1G16Q2A-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified		1073741824 bit	1K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFM1216Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES	CMOS	BALL	PARALLEL	64K	25 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-XBGA-B63	1	Not Qualified		536870912 bit	1K	e3		NAND TYPE	.00005 Amp	70 ns	2.7	NO
KFG1G16U2C-AIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	65 mA	67108864 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	Not Qualified		1073741824 bit	1K	e1	260	NAND TYPE	.00008 Amp	70 ns	2.7	NO
KFM1216Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES	CMOS	BALL	PARALLEL	64K	30 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-XBGA-B63	1	Not Qualified		536870912 bit	1K	e3		NAND TYPE	.00005 Amp	70 ns	2.7	NO
KFG4GH6Q4M-DEB60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	256K	30 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified	INDEPENDENT	4294967296 bit	2K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFG1G16Q2C-AEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3	Not Qualified		1073741824 bit	1K		260	NAND TYPE	.00005 Amp	11 ns	2.7	NO
KFM1G16Q2A-DED8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	45 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified		1073741824 bit	1K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFN2G16Q2A-DED60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified		2147483648 bit	1K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFH8GH6Q4M-DEB60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	256K	35 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	512MX16	512M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified	INDEPENDENT	8589934592 bit	2K	e3		NAND TYPE	.0001 Amp	76 ns	2.7	NO
KFN2G16Q2A-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	45 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified		2147483648 bit	1K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFG4GH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	256K	30 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	256MX16	256M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1	Not Qualified	INDEPENDENT	4294967296 bit	2K	e3		NAND TYPE	.00005 Amp	76 ns	2.7	NO
KFG1G16Q2C-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	PARALLEL	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3	Not Qualified		1073741824 bit	1K		260	NAND TYPE	.00005 Amp	9 ns	2.7	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.