DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT93C66PI-2.7	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words				8	IN-LINE		16			2.54 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C56PI-2.7	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words				8	IN-LINE		16			2.54 mm	85 Cel			256X8	256	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C57LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		.00001 Amp	9.36 mm
CAT64LC10L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	64 words	3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel			64X16	64	0 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V		e3		.000003 Amp	9.59 mm
CAT93C56AP-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	70 Cel			128X16	128	0 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C56LA-GE	Onsemi	EEPROM CARD	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3		.00001 Amp	9.27 mm		2.7
CAT93C56LI-REVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8			2.54 mm	85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3			9.59 mm
CAT93C66PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE		8		100	2.54 mm	85 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0			9.36 mm
CAT93C66LAREVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE		8		100	2.54 mm	105 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION	e3			9.27 mm
CAT93C66L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE		8		100	2.54 mm	70 Cel			256X16	256	0 Cel		MATTE TIN			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			9.36 mm
CAT64LC20PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0		.000003 Amp	9.59 mm
CAT64LC10PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	64 words	3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0		.000003 Amp	9.59 mm
CAT93HC46PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e0		.00001 Amp	9.59 mm
CAT93C57LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		.00001 Amp	9.36 mm
CAT93C86API-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words				16	IN-LINE					2.54 mm	85 Cel			1KX16	1K	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.27 mm
CAT93C56LE-1.8-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN	e3		.00001 Amp	9.27 mm		2.7
CAT93C57L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8		100	2.54 mm	70 Cel			128X16	128	0 Cel		TIN			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3			9.36 mm
CAT93C76PI-REVA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			16	IN-LINE		8			2.54 mm	85 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0			9.59 mm
CAT93HC46P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	70 Cel			64X16	64	0 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	1024 bit	2.5 V		e0		.00001 Amp	9.59 mm
CAT93C66LA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		.00001 Amp	9.36 mm
CAT93C66API-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE					2.54 mm	85 Cel			256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C56AP	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	70 Cel			128X16	128	0 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C76PI-1.8REVA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			16	IN-LINE		8			2.54 mm	85 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		3 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0			9.59 mm
CAT93C57PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8		100	2.54 mm	85 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0			9.36 mm
CAT93C57LA-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3		.00001 Amp
CAT93C57LE-1.8REVE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8			2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V		e3			9.27 mm
CAT64LC40LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V		e3		.000003 Amp	9.59 mm
CAT93C86L-1.8REVC	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			16	IN-LINE		8			2.54 mm	70 Cel			1KX16	1K	0 Cel		MATTE TIN			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3			9.36 mm
CAT93C86LE-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			1KX16	1K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit					.00001 Amp
CAT93HC46PE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V		e0		.00001 Amp	9.59 mm
CAT93C66P-2.7	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words				8	IN-LINE		16			2.54 mm	70 Cel			512X8	512	0 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE	e0			9.36 mm
CAT93C86PA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			16	IN-LINE		8		100	2.54 mm	105 Cel			1KX16	1K	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0			9.36 mm
CAT93C56LE-REVE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8			2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V		e3			9.59 mm
CAT93C76PE-1.8REVA	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			16	IN-LINE		8			2.54 mm	125 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		3 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V		e0			9.59 mm
CAT93C76LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	5	NO	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel	NO		512X16	512	-40 Cel	NO	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	6.35 mm	Not Qualified	1 ms	MICROWIRE	8192 bit	1.8 V		e4	260	.00001 Amp	9.27 mm			YES
CAT93C57LE-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e3		.00001 Amp
CAT93C56LE-GE	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3		.00001 Amp	9.27 mm		2.7
CAT64LC20L	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel			128X16	128	0 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V		e3		.000003 Amp	9.59 mm
CAT93C57LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		.00001 Amp	9.36 mm
CAT93C57PI-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words	3			16	IN-LINE		8			2.54 mm	85 Cel			128KX16	128K	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2097152 bit	1.8 V		e0			9.59 mm
CAT93C57PE-REVE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words	3			16	IN-LINE		8			2.54 mm	125 Cel			128KX16	128K	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V		e0			9.59 mm
CAT93C66LI-GE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN	e3		.00001 Amp	9.27 mm
CAT93C86LI-1.8REVC	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			16	IN-LINE		8			2.54 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V		e3			9.59 mm
CAT93C56PA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE		8		100	2.54 mm	105 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e0			9.36 mm
CAT93C56LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION	e3		.00001 Amp	9.59 mm
CAT28LV65P-35	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3.3			8	IN-LINE					2.54 mm	70 Cel			8KX8	8K	0 Cel		TIN LEAD			DUAL			R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	3 V		e0			36.703 mm	350 ns	3
CAT25080LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION	e4	260	.000002 Amp	9.27 mm
CAT24WC02LA-1.8REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	105 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit					.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.