DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
ST24LC21BB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	4.5		3.6/5.5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0	.00003 Amp	9.55 mm
ST93C57CB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3		3.3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e0	.00005 Amp	9.55 mm
ST24FC21BB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	1010000R		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			e0	.00003 Amp	9.55 mm
ST93C47TB1013TR	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words				8	IN-LINE		16			2.54 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDIP-T8	5.5 V	4.8 mm			7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V					9.55 mm	500 ns
M28010-12RBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs	10	2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			DUAL		R-PDIP-T32	2.4 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3	.00003 Amp	41.91 mm	120 ns	3	YES
M28256-150BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28			100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0	.0001 Amp		150 ns		YES
ST25E64B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					2.54 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V					9.55 mm
ST95N08B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	1024 words			3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		1KX8	1K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0	.00001 Amp
ST95P04B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	3.3			8	IN-LINE				40	2.54 mm	125 Cel		512X8	512	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; SPI BUS INTERFACE; 16 BYTE PAGE WRITE				9.55 mm
M93S46-RBN3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	5			16	IN-LINE					2.54 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3		9.27 mm
M28010-10BA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e3	.00005 Amp	41.91 mm	100 ns	5	YES
M28C64-25WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	250 ns	3	YES
ST93C67B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3		3.3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	CONFIGURABLE AS 256 X 16		e0	.00005 Amp	9.55 mm
M28C64C-200P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	37.085 mm	200 ns	5	YES
ST25W08B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0	.000005 Amp	9.55 mm
TS93C46VP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		4 mA	64 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel		64X16	64	-40 Cel		Tin/Lead (Sn/Pb)			DUAL	SOFTWARE	R-PDIP-T8			10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0	.0001 Amp
ST25C02B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0	.000005 Amp	9.55 mm
ST93C47B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words				8	IN-LINE					2.54 mm	125 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8	5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	3 V	CAN BE ORGANIZED AS 64 X 16				9.55 mm
ST95N08B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	1024 words			3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel		1KX8	1K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0	.00001 Amp
M28C64-90XP6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28						Not Qualified			65536 bit			64	e0	.0001 Amp		90 ns		YES
ST93CS56B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0	.0001 Amp	9.55 mm
M34D64WBN5	STMicroelectronics	EEPROM CARD	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1 mA	8192 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-20 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e0	.000002 Amp			2.7
M93S56-RBN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		131072 words	5			16	IN-LINE					2.54 mm	125 Cel		128KX16	128K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V					9.27 mm
ST95081B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel		1KX8	1K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SPI BUS INTERFACE; 16 BYTE PAGE WRITE		e0	.00005 Amp	9.55 mm
M28C64-20WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	200 ns	3	YES
ST24C08CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	1KX8	1K	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST25C16B	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words				8	IN-LINE				10	2.54 mm	70 Cel		2KX8	2K	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm			7.62 mm	Not Qualified			16384 bit	2.5 V	OVER 10 YEARS DATA RETENTION				9.55 mm		3
M34W02-BN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	256 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0	.0001 Amp
ST95020B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V			e0	.00005 Amp	9.55 mm
M34C02-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	4.5 V			e0	.000001 Amp	9.55 mm
ST25C04B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.000005 Amp	9.55 mm
ST24E16DB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S66-BN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE					2.54 mm	85 Cel		256X16	256	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V					9.27 mm
ST24LC21BB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	4.5		3.6/5.5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0	.00003 Amp	9.55 mm
M28010-25RBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words	2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32	2.4 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e3	.00003 Amp	41.91 mm	250 ns	3	YES
ST93C06CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel		16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00005 Amp	9.55 mm
M93S66-WBN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e3	.000005 Amp	9.27 mm
ST25W01CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST93C56B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	125 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00005 Amp	9.55 mm
M28256-20BS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V					36.02 mm	200 ns	5
ST24W02CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST93C47TB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words			3.3/5	8	IN-LINE	DIP8,.3	16	EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0	.00005 Amp	9.55 mm	500 ns
ST24W04B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE		e0		9.55 mm
ST24W04B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		512X8	512	0 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE		e0		9.55 mm
M28010-20RBA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	2			8	IN-LINE					2.54 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDIP-T32	2.4 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	1.8 V					41.91 mm	200 ns	3
ST95020B1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		2 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V					9.55 mm
ST95080B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		1KX8	1K	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SPI BUS INTERFACE; 16 BYTE PAGE WRITE		e0	.00005 Amp	9.55 mm
M28C64-25WBS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3			8	IN-LINE				40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel					DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION				36.02 mm	250 ns	3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.