DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC16GLI-1.8REV-F	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC66LI-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24WC16GLI-1.8REV-D	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC02L-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		256X8	256	0 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C33LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel		4KX8	4K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e3				9.59 mm
CAT24WC08PI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT24FC65LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	8192 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.000001 Amp
CAT24WC08P-1.8REV-F	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		1KX8	1K	0 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25C64GLI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		6 V			3 MHz			10 ms	SPI	65536 bit	2.5 V			e4
CAT28C512LI15	Onsemi	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	85 Cel		64KX8	64K	-40 Cel	NO	TIN		DUAL		R-PDIP-T32		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		524288 bit	4.5 V		128	e3		260	.0002 Amp	42.03 mm	150 ns	5	YES
CAT25040LE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE					125 Cel		512X8	512	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V			e3
CAT25020LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				2.54 mm	125 Cel		256X8	256	-40 Cel		MATTE TIN		DUAL		R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3				9.36 mm
CAT28C16AL-90	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs	100	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN		DUAL		R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	90 ns		YES
CAT28C256PA-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	105 Cel		32KX8	32K	-40 Cel	NO			DUAL		R-PDIP-T28	1	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	10000 PROGRAM/ERASE CYCLES	64				.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C256HPA-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES		e0				36.703 mm	150 ns	5
CAT24WC64PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V						.000001 Amp	9.59 mm
CAT24C256LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	100 YEAR DATA RETENTION					.000002 Amp	9.27 mm
CAT24WC16PREV-D	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		2KX8	2K	0 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24C01BGLA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel		128X8	128	-40 Cel				DUAL		R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.000001 Amp
CAT24WC16LREV-D	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		2KX8	2K	0 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC01LAREV-E	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		128X8	128	0 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT28LV256P-35	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	3 V			e0				36.703 mm	350 ns	3
CAT24WC03GLI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.0000009 Amp
CAT25080LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		1KX8	1K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION		e3			.000002 Amp	9.27 mm
CAT28LV64L-25	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	8 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	Tin (Sn)		DUAL		R-PDIP-T28		3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	3 V		32	e3			.0001 Amp	36.695 mm	250 ns	3	YES
CAT28C16AL-20T	Onsemi	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO		8	IN-LINE	DIP24,.6		10	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO			DUAL		R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm		10 ms		16384 bit	4.5 V						.0001 Amp	31.875 mm	200 ns		YES
CAT24WC08LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel		1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25C11LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		128X8	128	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e3			.000001 Amp	9.59 mm
CAT24WC16PA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	105 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC05P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		512X8	512	0 Cel		TIN LEAD	1010DDMR	DUAL	HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION; SELF TIMED WRITE		e0			.0000009 Amp	9.59 mm
CAT24C01BP	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD		DUAL		R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V			e0			.000001 Amp	9.59 mm
CAT24WC01LIREV-C	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		128X8	128	0 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C08LA-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			8	IN-LINE				2.54 mm	105 Cel		1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		R-PDIP-T8		5.5 V	4.57 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e4	40	260		9.59 mm
CAT28C16APA-90	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	105 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		DUAL		R-PDIP-T24		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e0			.0001 Amp	31.875 mm	90 ns	5	YES
CAT24WC64GLI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V						.000001 Amp	9.59 mm
CAT24FC17PE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel		2KX8	2K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp	9.59 mm
CAT28C256FPI-15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V			e0				36.703 mm	150 ns	5
CAT24WC08GLE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel		1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25C64L-G	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		8KX8	8K	0 Cel		NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	2.5 V			e4			.000001 Amp	9.271 mm
CAT28C257HPA-90	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE			100	2.54 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD		DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0				36.703 mm	90 ns	5
CAT25040GLI-REV-C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE					85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V			e4
CAT25C11LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel		128X8	128	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e3			.00001 Amp	9.59 mm
CAT24WC66LI-1.8-GT3	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			100	2.54 mm	85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24WC01PEREV-F	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	128 words			3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel		128X8	128	0 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC32LA	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words				8	IN-LINE	DIP8,.3		100	2.54 mm	105 Cel		4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm		10 ms	I2C	32768 bit	2.5 V						.00001 Amp	9.59 mm
CAT28LV256HP-35	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD		DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	3 V			e0				36.703 mm	350 ns	3
CAT25C09LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		1KX8	1K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e3				9.59 mm
CAT28C64BLI12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3		260	.0001 Amp	36.695 mm	120 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.