DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC64-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	9.271 mm		4.5
24LC256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
AT28C256-15PU	Microchip Technology	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T28	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3				.0002 Amp	37.0205 mm	150 ns	5	YES
25LC256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	32768 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	NO	3-STATE	32KX8	32K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3				.000001 Amp	9.271 mm		2.5
24LC256-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.0000015 Amp	9.271 mm		4.5
24LC02B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
24LC64-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3				.000001 Amp	9.271 mm
24LC16B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
AT28C64B-15PU	Microchip Technology	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	10	2.54 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		DUAL	1		R-PDIP-T28	5.5 V	4.826 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		65536 bit	4.5 V	100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE	64	e3				.0001 Amp	37.0205 mm	150 ns	5	YES
24LC32A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	9.27 mm
24C02C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V			e3				.000005 Amp	9.271 mm		5
25LC512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.92 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz		e3				.00001 Amp	9.271 mm		5
24LC128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
24LC256-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
24LC512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3				.000001 Amp	9.271 mm
25LC1024-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	IN-LINE	DIP8,.3	Flash Memories	200	2.54 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.62 mm	Not Qualified	6 ms	SPI	1048576 bit	4.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3			NOR TYPE	.000012 Amp	9.271 mm		5
25LC256-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	4.32 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3				.000001 Amp	9.46 mm
93LC46B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words	4.5		3/5	16	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel			64X16	64	0 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	6 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3				.000001 Amp	9.271 mm		4.5
24C01C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR	DUAL	1		R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	1 ms	I2C	1024 bit	4.5 V			e3				.000005 Amp	9.271 mm		5
24LC16B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	2KX8	2K	0 Cel		MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e3				.0001 Amp	9.46 mm		5
25AA256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3				.000001 Amp	9.271 mm		2.5
24AA024-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3				.000005 Amp	9.271 mm		2.5
24LC1025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010MDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3				.000005 Amp	9.271 mm		3
93LC56B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words	3		3/5	16	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel			128X16	128	0 Cel		MATTE TIN		DUAL	1		R-PDIP-T8	6 V	4.32 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3				.000001 Amp	9.46 mm		3
25LC640A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
AT28C256-25DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	125 Cel			32KX8	32K	-55 Cel				DUAL			R-GDIP-T28	5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED			37.215 mm	250 ns	5
24AA256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260		.000005 Amp	9.271 mm		2.5
M24C02-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3				.000001 Amp	9.27 mm
24AA64-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	9.271 mm		4.5
24LC32A/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel			4KX8	4K	0 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	6 V		1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	9.2 mm
24LC256-I/PRVE	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5			8	IN-LINE	DIP8,.3		200	2.54 mm	85 Cel			32KX8	32K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	262144 bit	2.5 V							.0000015 Amp	9.271 mm		4.5
M24C16-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3				.000001 Amp	9.27 mm
24LC01B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
24LC128-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS		e3				.000001 Amp	9.271 mm
25LC040A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	512 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
CAT24C256LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4		260		.000001 Amp	9.27 mm
CAT28C64BL-12	Catalyst Semiconductor	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO	MATTE TIN		DUAL			R-PDIP-T28	5.5 V	5.08 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	36.695 mm	120 ns	5	YES
CAT28C64BL12	Onsemi	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO	TIN		DUAL			R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V		32	e3				.0001 Amp	36.695 mm	120 ns	5	YES
M24C64-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	9.27 mm
AT17LV256-10PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	3.3		3.3	1	IN-LINE	DIP8,.3	EEPROMs	90	2.54 mm	85 Cel			256KX1	256K	-40 Cel		MATTE TIN		DUAL		HARDWARE	R-PDIP-T8	3.6 V	5.334 mm	100000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e3				.00015 Amp	9.271 mm	80 ns
24LC64F-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
25LC640-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3				.000005 Amp	9.271 mm		5
AT24C02C-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	IN-LINE	DIP8,.3		100	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	2048 bit	1.7 V			e3				.000006 Amp	9.271 mm		2.5
24C02C/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	70 Cel			256X8	256	0 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V			e3				.00005 Amp	9.46 mm		5
AT24C02D-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words	3		1.8/3.3	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8	3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 3.6V @ 0.4MHz		e3				.0000008 Amp	9.271 mm		3
24AA256UID-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		1.8/5	8	IN-LINE	DIP8,.3	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1		R-PDIP-T8	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ		e3				.000001 Amp	9.271 mm		4.5
24LC64-I/PREL	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE			200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL			R-PDIP-T8	5.5 V	5.334 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3					9.271 mm
AT28LV256-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)		DUAL			R-PDIP-T28	3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0				.00005 Amp	36.95 mm	250 ns	3	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.