DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT28C010-12DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5			8	IN-LINE					2.54 mm	125 Cel			128KX8	128K	-55 Cel					DUAL			R-GDIP-T32		5.5 V	5.72 mm			15.24 mm		10 ms		1048576 bit	4.5 V							42.2 mm	120 ns	5
24AA01-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3			.000001 Amp	9.271 mm		2.5
24AA044-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5			8	IN-LINE	DIP8,.3			200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	4096 bit	2.2 V	1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz		e3			.000001 Amp	9.271 mm		2.5
24AA1026-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		2.5		1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3			.000005 Amp	9.271 mm		2.5
24FC128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3			.000005 Amp	9.271 mm		2.5
24LC08B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	1KX8	1K	0 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3				9.46 mm		5
24LC21/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	128X8	128	0 Cel		MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V			e3			.0001 Amp	9.46 mm		5
25AA256-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	32768 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel	NO	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3			.000001 Amp	9.46 mm		1.8
25LC128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	16384 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V			e3			.000001 Amp	9.271 mm		5
25LC640A-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	8192 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3			.000005 Amp	9.271 mm		5
93AA46C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		2.5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V			e3			.000001 Amp	9.27 mm
93AA66C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5	YES	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	ALSO CONFIGURABLE AS 512 X 8		e3			.000001 Amp	9.27 mm
93C46C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	4.5 V			e3			.000001 Amp	9.27 mm
93LC66B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words		3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel			256X16	256	0 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	2.5 V			e3			.000001 Amp	9.46 mm		3
93LC86C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words		3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.5 V			e3			.0001 Amp	9.271 mm		5
AT24HC04B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	4.5 V	ALSO OPERATES AT 1.8V TO 5.5V @ 0.4MHZ		e3			.000018 Amp	9.271 mm		5
AT28C010-15DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	131072 words		5	YES		8	IN-LINE	DIP32,.6			10	2.54 mm	125 Cel			128KX8	128K	-55 Cel	NO				DUAL		HARDWARE/SOFTWARE	R-GDIP-T32		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V		128				.0003 Amp	42.2 mm	150 ns	5	YES
AT28C256-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE					2.54 mm	125 Cel			32KX8	32K	-55 Cel		TIN LEAD			DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm		10 ms		262144 bit	4.5 V			e0				37.215 mm	150 ns	5
AT28C256F-15DM/883-815	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel			32KX8	32K	-55 Cel	NO				DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64				.0003 Amp	37.215 mm	150 ns	5	YES
AT28HC256-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL			R-GDIP-T28	1	5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.215 mm	90 ns	5	YES
AT93C46E-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	SEPARATE	5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	NO	3-STATE	64X16	64	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	3-WIRE	1024 bit	4.5 V	ALSO OPERATES AT 1MHZ AT 2.7MIN AND AT 0.25MHZ AT 1.8MIN		e3			.000015 Amp	9.271 mm		5
AT93C86A-10PU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	3-WIRE	16384 bit	4.5 V	2.7V TO 5.5V @ 1MHz AND 1.8V TO 5.5V @ 0.25MHz		e3			.000015 Amp	9.271 mm		5
NMC9306N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	16 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel		3-STATE	16X16	16	0 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	40000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	30 ms	MICROWIRE	256 bit	4.5 V			e0			.003 Amp	9.817 mm
TMS28C64-25N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO			YES	DUAL			R-PDIP-T28							Not Qualified			65536 bit			32				.003 Amp		250 ns		YES
TMS28C64-35J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO			YES	DUAL			R-XDIP-T28							Not Qualified			65536 bit			32				.003 Amp		350 ns		YES
TMS28C64-35N	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO			YES	DUAL			R-PDIP-T28							Not Qualified			65536 bit			32				.003 Amp		350 ns		YES
TMS28C64-25NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO			YES	DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	250 ns	5	YES
TMS28C64-25J	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO			YES	DUAL			R-XDIP-T28							Not Qualified			65536 bit			32				.003 Amp		250 ns		YES
TMS28C64-35NL	Texas Instruments	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO			YES	DUAL			R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	4.5 V		32		NOT SPECIFIED	NOT SPECIFIED	.003 Amp	36.32 mm	350 ns	5	YES
5962-01-248-0239	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		TTL		THROUGH-HOLE				1024 words		5		5	8	IN-LINE	DIP24,.6		OTP ROMs		2.54 mm	70 Cel			1KX8	1K	0 Cel					DUAL			R-PDIP-T24							Not Qualified			8192 bit					NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7
5962-01-248-0235	Texas Instruments	EEPROM CARD	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		TTL		THROUGH-HOLE				1024 words		5		5	8	IN-LINE	DIP24,.6		OTP ROMs		2.54 mm	70 Cel			1KX8	1K	0 Cel					DUAL			R-XDIP-T24							Not Qualified			8192 bit					NOT SPECIFIED	NOT SPECIFIED			70 ns	2.7
CAT93C56LA-1.8REVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			16	IN-LINE		8			2.54 mm	105 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e3				9.27 mm
CAT93C57LE-1.8-GE	Onsemi	EEPROM CARD	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	9.27 mm		2.7
CAT93C66LI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	256 words				2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit							.00001 Amp
CAT93C76PE-REVA	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5			16	IN-LINE		8			2.54 mm	125 Cel			512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V			e0				9.59 mm
CAT93C57PI-2.7	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words					8	IN-LINE		16			2.54 mm	85 Cel			256X8	256	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE		e0				9.27 mm
CAT93C66LEREVE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			16	IN-LINE		8		100	2.54 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	100 YEAR DATA RETENTION		e3				9.27 mm
CAT93C76LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		5	NO	2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel	NO		512X16	512	-40 Cel	NO			YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	6.35 mm	Not Qualified	1 ms	MICROWIRE	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	9.27 mm			YES
CAT93HC46P-1.8	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	70 Cel			64X16	64	0 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V			e0			.00001 Amp	9.59 mm
CAT93C56LI-1.8-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			128X16	128	-40 Cel					DUAL		SOFTWARE	R-PDIP-T8		5.5 V		1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V					.00001 Amp	9.2 mm
CAT93C66P	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			16	IN-LINE		8		100	2.54 mm	70 Cel			256X16	256	0 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				9.36 mm
CAT93C86LE-GREVC	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words		5			16	IN-LINE		8			2.54 mm	125 Cel			1KX16	1K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDIP-T8		5.5 V	4.57 mm		1 MHz	7.62 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V			e4	40	260		9.59 mm
CAT93C66PI-2.5	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words					8	IN-LINE		16			2.54 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE		e0				9.36 mm
CAT93C66LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3			.00001 Amp	9.27 mm
CAT93C86LI-1.8C	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	1024 words				2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			1KX16	1K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit							.00001 Amp
CAT93C56LA-1.8-GREVE	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			16	IN-LINE		8			2.54 mm	105 Cel			128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDIP-T8		5.5 V	5.33 mm		.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e4				9.59 mm
CAT93C66P-2.5	Onsemi	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words					8	IN-LINE		16			2.54 mm	70 Cel			512X8	512	0 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE		e0				9.36 mm
CAT93C56API-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			16	IN-LINE					2.54 mm	85 Cel			128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDIP-T8		6 V	4.57 mm		.25 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V	MICROWIRE BUS SERIAL INTERFACE; AUTOMATIC WRITE		e0				9.36 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.