DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
93C66B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5	YES	5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V			e3			.000001 Amp	9.27 mm
93LC66A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		2.5	YES	3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3			.000001 Amp	9.27 mm
93LC66C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V			e3			.0001 Amp	9.271 mm		3
AT24C1024B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	131072 words					8	IN-LINE	DIP8,.3			40	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	1048576 bit	2.5 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	256				.000006 Amp	9.27 mm
AT24C16D-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	2048 words				1.8/3.3	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDIP-T8		3.6 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e3			.0000008 Amp	9.271 mm
AT24C512B-PU25	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	65536 words		3.6			8	IN-LINE	DIP8,.3			40	2.54 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	524288 bit	2.5 V		128				.000006 Amp	9.271 mm		3.6
AT28C16-15PI	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5			8	IN-LINE	DIP24,.6			10	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO				DUAL			R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm		1 ms		16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
AT28C256F-25PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	250 ns	5	YES
AT28HC256-90PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	90 ns	5	YES
CAT24M01LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	131072 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V			e4			.000002 Amp	9.27 mm
PCF8582C-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE		e4			.0000035 Amp	9.5 mm
PCF8582C-2P/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4			.0000035 Amp	9.5 mm
W27C512-45Z	Winbond Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5			8	IN-LINE					2.54 mm	70 Cel			64KX8	64K	0 Cel					DUAL			R-PDIP-T28		5.25 V	5.33 mm			15.24 mm	Not Qualified			524288 bit	4.75 V				NOT SPECIFIED	NOT SPECIFIED		37.08 mm	45 ns	12
X24C16PM-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V							9.585 mm
X24C16PMB-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V							9.585 mm
X24C16PMB-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V							9.585 mm
XC1736EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	36288 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	36288X1	36288	0 Cel		Matte Tin (Sn)			DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		10 MHz	7.62 mm	Not Qualified			36288 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250	.00005 Amp	9.3599 mm
24LC00/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	16 words		4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	16X8	16	0 Cel		MATTE TIN	1010XXXR		DUAL	1		R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	4 ms	I2C	128 bit	2.5 V			e3			.000001 Amp	9.46 mm		4.5
24LC128-I/PRVF	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words		5			8	IN-LINE	DIP8,.3			200	2.54 mm	85 Cel	NO	OPEN-DRAIN	16KX8	16K	-40 Cel			1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	131072 bit	2.5 V						.000001 Amp	9.271 mm		2.5
25AA1024-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words		5			8	IN-LINE	DIP8,.3			200	2.54 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.62 mm	Not Qualified	6 ms	SPI	8388608 bit	4.5 V	OPERTAES WITH 2.5VMIN @ 10MHZ		e3			.000012 Amp	9.271 mm		5
93C66A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		2.5	YES	5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V			e3			.000001 Amp	9.27 mm
93LC46A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3			.000001 Amp	9.27 mm
AT24C01C-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	1024 bit	1.7 V			e3			.000006 Amp	9.271 mm		2.5
AT24C08B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			1KX8	1K	-40 Cel		MATTE TIN	1010DMMR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e3			.000003 Amp	9.27 mm
AT28C16E-15PI	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5			8	IN-LINE	DIP24,.6			10	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO				DUAL			R-PDIP-T24		5.5 V	5.59 mm	100000 Write/Erase Cycles		15.24 mm		.2 ms		16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
AT28C256-20PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	200 ns	5	YES
AT28C256F-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0002 Amp	37.0205 mm	150 ns	5	YES
AT28HC256-12PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.0205 mm	120 ns	5	YES
AT28HC256F-90DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL	1	HARDWARE/SOFTWARE	R-GDIP-T28	1	5.5 V	5.72 mm			15.24 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	37.215 mm	90 ns	5	YES
AT93C66A-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.7 V	IT CAN ALSO CONFIGURABLE AS 256 X 8		e3		260	.00001 Amp	9.271 mm
CAT24C512LI-G	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2.5 mA	65536 words		3.3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel	NO		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4			.000002 Amp	9.27 mm
CAT28C16ALI-12	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	IN-LINE	DIP24,.6		EEPROMs	100	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO	Tin (Sn)			DUAL			R-PDIP-T24		5.5 V	6.35 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	120 ns	5	YES
HT24LC64(8DIP)	Holtek Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		5 mA	8192 words				2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel			8KX8	8K	0 Cel			1010DDDR		DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.000004 Amp
M24C08-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	4.5 V			e0			.000001 Amp	9.27 mm
M93C46-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel			64X16	64	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3			.00001 Amp	9.27 mm
M93C86-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	1024 words		5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	16384 bit	2.5 V			e3			.00001 Amp	9.27 mm
NMC93C46EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	40000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V			e0			.0001 Amp	9.817 mm
X24C16PM	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V							9.585 mm
X24C16PM-2.7	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V							9.585 mm
X24C16PM-3.5	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3.5 V							9.585 mm
X24C16PMB	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V							9.585 mm
X24C16PMB-3	Intersil	EEPROM	MILITARY	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		3.3			8	IN-LINE					2.54 mm	125 Cel			2KX8	2K	-55 Cel					DUAL			R-PDIP-T8		5.5 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V							9.585 mm
X25020P	Xicor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		3-STATE	256X8	256	0 Cel		Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.32 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0			.00015 Amp	10.03 mm
24AA64-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5			8	IN-LINE	DIP8,.3			200	2.54 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR			1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	65536 bit	2.5 V			e3			.000005 Amp	9.271 mm		4.5
24AA65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3			.000005 Amp	9.46 mm		5
24LC08B-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	1024 words		5			8	IN-LINE	DIP8,.3			200	2.54 mm	125 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3			.000005 Amp	9.271 mm		5
AT28HC256-12PU	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e3			.0003 Amp	37.0205 mm	120 ns	5	YES
CAT28C16ALI-20	Onsemi	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	2048 words		5		5	8	IN-LINE	DIP24,.6		EEPROMs	100	2.54 mm	85 Cel			2KX8	2K	-40 Cel	NO	TIN			DUAL			R-PDIP-T24		5.5 V	6.35 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		16384 bit	4.5 V			e3			.0001 Amp	31.875 mm	200 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.