DIP EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
93LC66B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	YES	3/5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3				.000001 Amp	9.27 mm
AT28LV256-25PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		3.465 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	3.135 V	AUTOMATIC WRITE	64	e0				.00002 Amp	36.95 mm	250 ns	3	YES
AT24C02B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	2048 bit	4.5 V							.000018 Amp	9.271 mm		5
24LC512-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	65536 words	4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3				.000001 Amp	9.271 mm
AT24C64A-10PU-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	20 ms	I2C	65536 bit	2.7 V			e3		260		.000002 Amp	9.271 mm
24AA64-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			e3				.000001 Amp	9.271 mm
AT24C64C-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	65536 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32					.000006 Amp	9.271 mm		5
24AA32A-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	9.27 mm
25LC1024-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		3/5	8	IN-LINE	DIP8,.3		Flash Memories	200	2.54 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	6 ms	SPI	1048576 bit	2.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3			NOR TYPE	.00002 Amp	9.271 mm		5
5962-8751418XA	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				10	2.54 mm	125 Cel			8KX8	8K	-55 Cel		TIN LEAD			DUAL			R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			65536 bit	4.5 V	AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS		e0					37.25 mm	350 ns	5
M24C64-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V			e0				.000002 Amp	9.27 mm
24FC64-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3				.000001 Amp	9.271 mm		4.5
24LC512-E/P	Microchip Technology	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	125 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3				.000005 Amp	9.271 mm
AT93C46D-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			64X16	64	-40 Cel		MATTE TIN			DUAL	1		R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	3-WIRE	1024 bit	4.5 V	2.7V TO 5.5V @ 1MHz AND 1.8V TO 5.5V @ 0.25MHz		e3				.000015 Amp	9.271 mm		5
24AA1025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		MATTE TIN	1010MDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V			e3				.000005 Amp	9.271 mm		2.5
AT28C256-15PI	Atmel	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28		5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	240		.0002 Amp	37.0205 mm	150 ns	5	YES
24LC16B-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	4.32 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES; CAN BE ORGANIZED AS 8 BLOCKS OF 256 BYTES; DATA RETENTION >200 YEARS		e3				.000001 Amp	9.46 mm
25AA512-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	20 MHz	7.62 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz		e3		260		.000001 Amp	9.271 mm		5
M24C08-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			1KX8	1K	-40 Cel		Matte Tin (Sn) - annealed	1010DMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	9.27 mm
93C66C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	YES	5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V	ALSO CONFIGURABLE AS 512 X 8		e3				.000001 Amp	9.27 mm
M24C04-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed	1010DDMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3	NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	9.27 mm
X2816BP-25	Xicor	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	140 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6		EEPROMs	100	2.54 mm	70 Cel		3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T24		5.5 V	4.82 mm			15.24 mm	Not Qualified			16384 bit	4.5 V	16 BYTE PAGE WRITE; OVER 100 YEARS DATA RETENTION	16	e0				.07 Amp	31.56 mm	250 ns	5	YES
24LC65/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDIP-T8		6 V	4.32 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3				.000005 Amp	9.46 mm		5
93LC46B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3				.000001 Amp	9.27 mm
93LC46C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V			e3		260		.000001 Amp	9.27 mm
AT24C128B-PU	Microchip Technology	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	3			8	IN-LINE	DIP8,.3			40	.4 mm	85 Cel			16KX8	16K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	.4 mm	1000000 Write/Erase Cycles	1 MHz	1.8 mm		5 ms	I2C	131072 bit	1.8 V							.000006 Amp	2.2 mm		3
AT24C04C-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ		e3				.000006 Amp	9.271 mm		3
AT28C256-15PC	Atmel	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL			R-PDIP-T28	1	5.5 V	4.826 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0	30	225		.0002 Amp	37.0205 mm	150 ns	5	YES
24AA025-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3				.000001 Amp	9.271 mm		2.5
AT28C256F-15DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES		8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel			32KX8	32K	-55 Cel	NO				DUAL	1		R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		3 ms		262144 bit	4.5 V		64		NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	37.215 mm	150 ns	5	YES
AT93C86A-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.7 V	OPERATES AT 1 MHz AT MIN 2.7V		e3				.00001 Amp	9.271 mm		5
93LC56B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3				.000001 Amp	9.271 mm
AT17LV010-10PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs	90	2.54 mm	85 Cel			1MX1	1M	-40 Cel		MATTE TIN			DUAL		HARDWARE	R-PDIP-T8		3.6 V	5.334 mm	100000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e3				.0002 Amp	9.271 mm
AT17LV010A-10PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	1048576 words	3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel			1MX1	1M	-40 Cel		MATTE TIN			DUAL		HARDWARE	R-PDIP-T8		3.6 V	5.334 mm		15 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	ALSO OPERATES AT 5V SUPPLY		e3					9.271 mm
24FC1026-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.8 V			e3				.000005 Amp	9.271 mm		2.5
93C46B-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	4.5 V	1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS		e3				.000001 Amp	9.27 mm
93C46B/P	Microchip Technology	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	70 Cel			64X16	64	0 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	1024 bit	4.5 V			e3				.000001 Amp	9.271 mm		5
AT24C01D-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	3		1.8/3.3	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ		e3				.0000008 Amp	9.271 mm		3
M24C01-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3				.000001 Amp	9.27 mm
93C56C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	2 ms	MICROWIRE	2048 bit	4.5 V			e3				.000001 Amp	9.271 mm
AT24C02-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		250		.000004 Amp	9.271 mm
24LC02B-I/PG	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010XXXR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3				.000001 Amp	9.27 mm
24LC04B-I/P	Microchip Technology	EEPROM		8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e3				.000001 Amp	9.271 mm		5
93LC56C-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	200	2.54 mm	85 Cel			128X16	128	-40 Cel		MATTE TIN			DUAL	1	SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.5 V			e3				.0001 Amp	9.271 mm		3
24FC01-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	IN-LINE	DIP8,.3			200	2.54 mm	85 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	1024 bit	1.7 V							.000001 Amp	9.271 mm		2.5
AT24C1024B-PU25	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	131072 words				8	IN-LINE	DIP8,.3			40	2.54 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	1048576 bit	2.5 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	256					.000006 Amp	9.27 mm
AT24C16C-PUM	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7-5.5 SUPPLY VOLTAGE		e3				.000006 Amp	9.271 mm		3
AT28C256-20DM/883	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5			8	IN-LINE	DIP28,.6			10	2.54 mm	125 Cel			32KX8	32K	-55 Cel	NO				DUAL		HARDWARE/SOFTWARE	R-GDIP-T28		5.5 V	5.72 mm	10000 Write/Erase Cycles		15.24 mm		10 ms		262144 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED		.0003 Amp	37.215 mm	200 ns	5	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.