DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT28C256LI-15	Catalyst Semiconductor	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN		DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
CAT28C256LI15	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN		DUAL			R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.00015 Amp	36.695 mm	150 ns	5	YES
M95256-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	100000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0			.000001 Amp	9.27 mm
X24C04PI	Xicor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		TIN LEAD	1010DDMR	DUAL			R-PDIP-T8		5.5 V	4.32 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	2 WIRE INTERFACE;PAGE WRITE		e0			.00005 Amp	10.03 mm
24AA128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3			.000005 Amp	9.271 mm		2.5
25AA128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	16384 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e3			.000001 Amp	9.271 mm		2.5
AT28C16-15PC	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5			8	IN-LINE	DIP24,.6			10	2.54 mm	70 Cel			2KX8	2K	0 Cel	NO			DUAL			R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm		1 ms		16384 bit	4.5 V						.0001 Amp	31.9 mm	150 ns	5	YES
CAT24C64LI	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	8192 words		3.3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	9.27 mm
AT17LV010-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1048576 words		3.3		3.3/5	1	IN-LINE	DIP8,.3		EEPROMs	90	2.54 mm	85 Cel			1MX1	1M	-40 Cel		TIN LEAD		DUAL		HARDWARE	R-PDIP-T8	1	3.6 V	5.334 mm	100000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified			1048576 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.0001 Amp	9.271 mm
AT28C1024-15BC	Atmel	EEPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	65536 words		5	YES	5	16	IN-LINE	DIP40,.6		EEPROMs		2.54 mm	70 Cel		3-STATE	64KX16	64K	0 Cel	NO	TIN LEAD		DUAL			R-CDIP-T40		5.5 V	4.06 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	AUTOMATIC WRITE; PAGE WRITE	64	e0			.0004 Amp	50.755 mm	150 ns	5	YES
AT24C01A-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.7 V	DATA RETENTION = 100 YEARS		e0			.000004 Amp	9.271 mm
AT24C256-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD	10100DDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	I2C	262144 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0			.0000005 Amp	9.271 mm
AT28C16F-15PI	Atmel	EEPROM	INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	45 mA	2048 words		5	NO	5	8	IN-LINE	DIP24,.6		EEPROMs		2.54 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		DUAL			R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	.2 ms		16384 bit	4.5 V	AUTOMATIC WRITE		e0			.0001 Amp	31.9 mm	150 ns	5	YES
BR9010	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel			64X16	64	-40 Cel		TIN COPPER		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		3.3 V	3.7 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified		4-WIRE	1024 bit	2.7 V	OPERATES IN 5V/3V VCC, 100,000 ERASE/WRITE CYCLES, 10 YEARS DATA RETENTION		e2			.000003 Amp	9.3 mm
NMC93C56EN	National Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		3-STATE	128X16	128	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	100000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V			e0			.00005 Amp	9.817 mm
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	128KX1	128K	0 Cel		Matte Tin (Sn)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e3	30	250	.00005 Amp	9.3599 mm
5962-8852505XA	Defense Logistics Agency	EEPROM	MILITARY	28	DIP		CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE						125 Cel			32KX8	32K	-55 Cel		TIN LEAD		DUAL					5.5 V					Not Qualified	10 ms		262144 bit	4.5 V			e0					250 ns	5
5962-8852505XX	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5			8	IN-LINE					2.54 mm	125 Cel			32KX8	32K	-55 Cel				DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	Not Qualified			262144 bit	4.5 V							37.215 mm	250 ns	5
AT17C256-10PI	Atmel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words		5		5	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel		3-STATE	256KX1	256K	-40 Cel		TIN LEAD		DUAL			R-PDIP-T8		5.5 V	4.318 mm		12.5 MHz	7.62 mm	Not Qualified			262144 bit	4.5 V			e0			.00015 Amp	9.398 mm	55 ns
AT17LV256-10PC	Atmel	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	262144 words		3.3		3.3	1	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel		TIN LEAD		DUAL			R-PDIP-T8	1	3.6 V	5.334 mm		10 MHz	7.62 mm	Not Qualified			262144 bit	3 V	IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO		e0			.00005 Amp	9.271 mm	75 ns
AT24C02B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3		260	.000003 Amp	9.271 mm
AT24C04-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR	DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	9.271 mm
AT24C1024-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	131072 words		3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD	10100DMR	DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1048576 bit	2.7 V			e0			.000003 Amp	9.271 mm
AT24C16-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V	2-WIRE SERIAL INTERFACE		e0			.000004 Amp	9.59 mm
AT24C16B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words		5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel			2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	16384 bit	1.8 V						.000006 Amp	9.271 mm		5
AT24C256B-10PU-1.8	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words		2.5		2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDIP-T8	1	3.6 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e3			.000001 Amp	9.271 mm
AT24C64-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		OPEN-DRAIN	8KX8	8K	0 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V	DATA RETENTION: 100 YEARS		e0			.000035 Amp	9.59 mm
AT25010-10PC	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	6 mA	128 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		3-STATE	128X8	128	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	3 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	4-WIRE SERIAL INTERFACE		e0			.0001 Amp	9.59 mm
AT28C64X-25PC	Microchip Technology	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		DUAL			R-PDIP-T28	1	5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE		e0			.0001 Amp	36.95 mm	250 ns	5	YES
AT93C46A-10PI-2.7	Atmel	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		3-STATE	64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V	3-WIRE SERIAL INTERFACE		e0			.00002 Amp	9.271 mm
AT93C56-10PC-2.7	Atmel	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	70 Cel		3-STATE	128X16	128	0 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	2.7 V	3-WIRE SERIAL INTERFACE		e0			.00001 Amp	9.59 mm
BR24C02	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	3.7 mm	10000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	25 ms	I2C	2048 bit	2.7 V	HARDWARE AND SOFTWARE WRITE PROTECTION; 2 WIRE SERIAL INTERFACE; 10 YEARS DATA RETENTION			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	9.3 mm
BR24G1M-3A	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4.5 mA	131072 words				1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			128KX8	128K	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C	1048576 bit	1.7 V	ROHM-S-A0000225889 REF SEATED HTCONSIDER			NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	9.3 mm
BR24L02-W	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			256X8	256	-40 Cel		Tin/Copper (Sn/Cu)	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	3.7 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e2	10	260	.000002 Amp	9.3 mm
BR24T16-WZ	ROHM	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words		2.5			8	IN-LINE	DIP8,.3	1		40	2.54 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm		5 ms	I2C	16384 bit	1.6 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	9.27 mm		2.5
FM93C06EN	Fairchild Semiconductor	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	16 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel			16X16	16	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V			e0			.00005 Amp	9.817 mm
FM93CS56LN	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel			128X16	128	0 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified	15 ms	MICROWIRE	2048 bit	2.7 V			e0			.00001 Amp	9.817 mm
NM93C66N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		3-STATE	256X16	256	0 Cel		Tin/Lead (Sn/Pb)		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; DATA RETENTION = 40 YEARS		e0			.00005 Amp	9.817 mm
NM93CS46N	National Semiconductor	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		3-STATE	64X16	64	0 Cel		Tin/Lead (Sn/Pb)		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	40 YEARS DATA RETENTION; MICROWIRE BUS INTERFACE		e0			.00005 Amp	9.817 mm
TC584000P	Toshiba	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5			8	IN-LINE					2.54 mm	70 Cel			512KX8	512K	0 Cel		TIN LEAD		DUAL			R-PDIP-T32		5.25 V	4.8 mm			15.24 mm	Not Qualified			4194304 bit	4.75 V	BULK ERASE; BLOCK ERASE		e0				42 mm	15000 ns	5
TMM2764AD-15	Toshiba	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5		5	8	IN-LINE	DIP28,.6		EPROMs		2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel		Tin/Lead (Sn/Pb)		DUAL			R-PDIP-T28		5.25 V	5.2 mm			15.24 mm	Not Qualified			65536 bit	4.75 V	LG-MAX		e0				37.7 mm	150 ns	5
X28C010DMB-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		5	YES		8	IN-LINE	DIP32,.6			100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel				DUAL			R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
X28HC256PI-12	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD		DUAL			R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0			.0005 Amp	37.4 mm	120 ns	5	YES
X28HC64PI-90	Intersil	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	100	2.54 mm	85 Cel			8KX8	8K	-40 Cel	NO	TIN LEAD		DUAL			R-PDIP-T28		5.5 V	6.35 mm	1000000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0			.0002 Amp	37.4 mm	90 ns	5	YES
X28HC64PIZ-12	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5			8	IN-LINE					2.54 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3				37.4 mm	120 ns	5
X28HC64PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5			8	IN-LINE					2.54 mm	70 Cel			8KX8	8K	0 Cel		MATTE TIN		DUAL			R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3				37.4 mm	120 ns	5
XC17256EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5		5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel		3-STATE	256KX1	256K	0 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified			262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225	.00005 Amp	9.3599 mm
XC17S200APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3		3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel		3-STATE	1335840X1	1335840	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified			1335840 bit	3 V			e0	30	225	.001 Amp	9.3599 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.