DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
ST24E32DB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S46-BN3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		64 words	5			16	IN-LINE					2.54 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V			e3		9.27 mm
M34C02-LBN1G	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	2.5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3		9.27 mm
M34C02-WBN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e0		9.27 mm
M34C02-WBN1P	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3		9.27 mm
ST93C66B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V	CAN BE ORGANIZED AS 256 X 16		e0	.00005 Amp	9.55 mm
ST95020WB6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	85 Cel	3-STATE	256X8	256	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V					9.55 mm
ST25E16DB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	2 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M28LV16-200P1	STMicroelectronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	IN-LINE	DIP24,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T24	3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	31.75 mm	200 ns	3	YES
M93S46-WBN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	64 words			3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0	.000005 Amp
ST25W16B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e0	.000005 Amp	9.55 mm
ST24C01RB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00001 Amp	9.55 mm
ST95020WB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0	.000025 Amp	9.55 mm
ST25C04CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST25W02B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0	.000005 Amp	9.55 mm
ST25C04B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.000005 Amp	9.55 mm
M28C64X-150P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	37.085 mm	150 ns	5	YES
M34D64-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	8192 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e0	.00001 Amp	9.55 mm
M28010-25WBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE				10	2.54 mm	70 Cel		128KX8	128K	0 Cel					DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				41.91 mm	250 ns	3
M34C02-RBN1T	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e0		9.27 mm
M28010-20BA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs	10	2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3	.00005 Amp	41.91 mm	200 ns	5	YES
M28010-15WBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	3	YES	3/3.3	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3	.00003 Amp	41.91 mm	150 ns	3	YES
ST93C46B1013TR	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words	5			8	IN-LINE					2.54 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDIP-T8	5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16				9.55 mm	500 ns
M34C02-FBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	2.5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	3.6 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e3		9.27 mm
ST25C04CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S46-RBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e3	.000002 Amp	9.27 mm
M28C17A-15BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	2048 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e3	.00005 Amp	37.085 mm	150 ns	5	YES
M34S32-WBN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words				8	IN-LINE				40	2.54 mm	70 Cel		4KX8	4K	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS				9.55 mm
ST25164DB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST95N02B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	256 words			3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		SPI	2048 bit				e0	.00001 Amp
M28C17-150P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified	3 ms		16384 bit	4.5 V		64	e0	.0001 Amp	36.02 mm	150 ns	5	YES
M28256-200BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28			100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0	.0001 Amp		200 ns		YES
ST24FW21B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	4.5		3.6/5.5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0	.00003 Amp	9.55 mm
M34D32BN5	STMicroelectronics	EEPROM CARD	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	4096 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		4KX8	4K	-20 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit				e0	.00001 Amp			2.7
ST24E32B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	4096 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	4KX8	4K	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V			e0	.0001 Amp	9.55 mm
M28LV64-250P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	36.02 mm	250 ns	3	YES
ST24C04RB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel		512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE		e0	.00001 Amp	9.55 mm
M28LV17-300P6	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	36.02 mm	300 ns	3	YES
ST93CS67B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words	3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; PAGE WRITE		e0	.00005 Amp	9.55 mm
M28LV17-250P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	36.02 mm	250 ns	3	YES
M34C02-WBN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3	.0000005 Amp	9.27 mm
M93S66-BN3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE					2.54 mm	125 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V			e3		9.27 mm
M34D64BN5	STMicroelectronics	EEPROM CARD	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	8192 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-20 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e0	.00001 Amp			2.7
M9346B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL		12 mA	64 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs		2.54 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0	.003 Amp
M93S46-BN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		64 words	5			16	IN-LINE					2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V			e3		9.27 mm
ST93C46CB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00005 Amp	9.55 mm
M28010-15BA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE				10	2.54 mm	70 Cel		128KX8	128K	0 Cel					DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				41.91 mm	150 ns	5
ST93C57CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3		3.3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e0	.00005 Amp	9.55 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.