DIP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24AC128PI-1.8	Onsemi	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	3		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		16KX8	16K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e0	.000001 Amp	9.59 mm
CAT28C257HPA-12	Onsemi	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				100	2.54 mm	105 Cel		32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS		e0		36.703 mm	120 ns	5
CAT24WC04GLE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	512 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel		512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit					.000001 Amp
M93S66-BN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e3	.000015 Amp	9.27 mm
M28256-12WBS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3	.00002 Amp	36.02 mm	120 ns	3	YES
ST24W04CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M28C64-12BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.0001 Amp	36.02 mm	120 ns	5	YES
M28C64-15WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	150 ns	3	YES
ST24C02CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M34C02-WBN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3		9.27 mm
ST95P02B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 16 BYTE PAGE WRITE		e0	.00001 Amp	9.55 mm
M34D64-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	8192 words	2.5		2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-20 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	3.6 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V			e0	.000001 Amp	9.55 mm
M34C02-FBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	2.5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8	3.6 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0		9.27 mm
ST25C02B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0	.000005 Amp	9.55 mm
M93S46-BN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e3	.000015 Amp	9.27 mm
M93S46-WBN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		64 words	5			16	IN-LINE					2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.5 V			e3		9.27 mm
ST25W04CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S66-BN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE					2.54 mm	125 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	4.5 V			e3		9.27 mm
ST25W01B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.000005 Amp	9.55 mm
ST25W04CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST25C08CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST25C04B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-20 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0	.000005 Amp	9.55 mm
M28256-20BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3	.0001 Amp	36.02 mm	200 ns	5	YES
M28C64-20WBS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3			8	IN-LINE				40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel					DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION				36.02 mm	200 ns	3
ST93C47CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words			3.3/5	8	IN-LINE	DIP8,.3	16	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0	.00005 Amp	9.55 mm	500 ns
M93S46-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	64 words			3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64X16	64	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0	.00001 Amp
M2201B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	MMMMMMMR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V	2 WIRE SERIAL INTERFACE; 100K ERASE/WRITE CYCLE; DATA RETENTION 100 YEARS; HARDWARE WRITE		e0	.0001 Amp	9.55 mm
ST93C46TB6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE					2.54 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8	5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16				9.55 mm
ST95021WB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0	.000025 Amp	9.55 mm
M93S46-RBN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	5			16	IN-LINE					2.54 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3		9.27 mm
ST93C06B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel	3-STATE	16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES.; 40 YEARS DATA RETENTION; USER CONFIGURABLE 16 X 16		e0	.00005 Amp	9.55 mm
ST25C01CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S56-RBN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e3	.000002 Amp	9.27 mm
ST95010WB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X8	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V			e0	.000025 Amp	9.55 mm
M28LV17-200P6	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words	3.3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0	.00005 Amp	36.02 mm	200 ns	3	YES
M28256-90BS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V					36.02 mm	90 ns	5
ST25W01B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	128X8	128	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.000005 Amp	9.55 mm
ST24C08RB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V			e0	.00001 Amp	9.55 mm
ST93C46TB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16		e0	.00005 Amp	9.55 mm
ST24C16CB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.0001 Amp	9.55 mm
M93S56-BN3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	125 Cel		128X16	128	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V					9.27 mm
M93S46-BN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0	.00005 Amp	9.27 mm
ST24C01B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	OPEN-DRAIN	128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0		9.55 mm
M34C02-FBN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	2.5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		Matte Tin (Sn)			DUAL		R-PDIP-T8	3.6 V	5.33 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e3		9.27 mm
M93S66-WBN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			16	IN-LINE					2.54 mm	85 Cel		256X16	256	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V					9.27 mm
M28256-90BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0	.0001 Amp	36.02 mm	90 ns	5	YES
ST93C46CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00005 Amp	9.55 mm
M34C02-LBN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	256 words	2.5		2.2/5.5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0	.000001 Amp	9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.