DIP EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28010-10WBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words	3	YES	3/3.3	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3	.00003 Amp	41.91 mm	100 ns	3	YES
M93S56-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	128 words			3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X16	128	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e0	.00001 Amp
M28010-20WBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE				10	2.54 mm	70 Cel		128KX8	128K	0 Cel					DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				41.91 mm	200 ns	3
M28256-12BS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	4.5 V					36.02 mm	120 ns	5
M28C64C-150P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0	.0001 Amp	37.085 mm	150 ns	5	YES
ST25C02AB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.000005 Amp	9.55 mm
M28C16-25WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	3			8	IN-LINE				40	2.54 mm	85 Cel		2KX8	2K	-40 Cel					DUAL		R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE				37.085 mm	250 ns	3
M28010-12BA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e3	.00005 Amp	41.91 mm	120 ns	5	YES
ST25E64DB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	2 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M93S56-BN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V			e3		9.27 mm
ST95021B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V			e0	.00005 Amp	9.55 mm
TS59C11CP	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		4 mA	64 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	70 Cel		64X16	64	0 Cel		Tin/Lead (Sn/Pb)			DUAL	SOFTWARE	R-PDIP-T8			10000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0	.0001 Amp
ST93C57CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	3.3		3.3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e0	.00005 Amp	9.55 mm
M34C02-BN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	4.5 V			e0	.000001 Amp	9.55 mm
ST95020WB1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	256X8	256	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V					9.55 mm
ST93C46CB1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			8	IN-LINE				10	2.54 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M2201WB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	MMMMMMMR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.7 V	100000 ERASE/WRITE CYCLES; 100 YEARS DATA RETENTION; PAGE WRITE		e0	.0001 Amp	9.55 mm
ST95041B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	512X8	512	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	4.5 V			e0	.00005 Amp	9.55 mm
ST24C16CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.0001 Amp	9.55 mm
M34C02-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.5 mA	256 words			2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X8	256	-20 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e0	.0000001 Amp	9.55 mm
ST95040B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	512X8	512	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	4.5 V			e0	.00005 Amp	9.55 mm
M93S66-BN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	256 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit				e0	.000015 Amp
M28C17-90P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28	5.5 V	5.08 mm			15.24 mm	Not Qualified	3 ms		16384 bit	4.5 V		64	e3	.0001 Amp	36.02 mm	90 ns	5	YES
ST24E64DB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE				10	2.54 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
ST24C01RB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00001 Amp	9.55 mm
M34C02-RBN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL		R-PDIP-T8	5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e0		9.27 mm
ST93C06CB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words	5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	125 Cel		16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0	.00005 Amp	9.55 mm
M93S66-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e0	.000015 Amp	9.27 mm
M93S66-BN3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e3	.00005 Amp	9.27 mm
M28010-12WBA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE					2.54 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V					41.91 mm	120 ns	3
M28C64-12WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words	3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0	.00002 Amp	36.02 mm	120 ns	3	YES
M28010-10WBA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE					2.54 mm	70 Cel		128KX8	128K	0 Cel					DUAL		R-PDIP-T32	3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V					41.91 mm	100 ns	3
M93S46-RBN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		64 words	5			16	IN-LINE					2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e3		9.27 mm
ST95011WB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	128X8	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V			e0	.000025 Amp	9.55 mm
M93S46-RBN3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words	5			16	IN-LINE					2.54 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8	5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3		9.27 mm
M93S56-WBN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5			16	IN-LINE					2.54 mm	125 Cel		128X16	128	-40 Cel		Tin/Lead (Sn60Pb40)			DUAL		R-PDIP-T8	5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0		9.27 mm
M28LV64C-300P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		15 mA	8192 words	3.3	YES	3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28			100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0	.00005 Amp		300 ns		YES
M28LV64-300P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28	3.6 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3	.00002 Amp	36.02 mm	300 ns	3	YES
ST25C02CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel					DUAL		R-PDIP-T8	5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS				9.55 mm
M28010-10BA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE					2.54 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V					41.91 mm	100 ns	5
ST95010B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	128X8	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	1024 bit	4.5 V			e0	.00005 Amp	9.55 mm
ST93C46AB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		5	8	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8	5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEAR DATA RETENTION; USER CONFIGURABLE 64 X 16		e0	.00005 Amp	9.55 mm
M93S56-BN3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0	.00005 Amp	9.27 mm
M93S56-RBN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words	2.5		2/3.3	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	128X16	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8	3.6 V	5.9 mm	1000000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e0	.000005 Amp	9.55 mm
ST24C01B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0		9.55 mm
M28C16-150P1	STMicroelectronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5	YES	5	8	IN-LINE	DIP24,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T24	5.5 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	4.5 V		64	e0	.0001 Amp	31.75 mm	150 ns	5	YES
ST24E256B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		32KX8	32K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8	5.5 V	5.9 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	262144 bit	4.5 V	100000 ERASE/WRITE CYCLES; 2 WIRE SERIAL INTERFACE; 10 YEARS DATA RETENTION		e0	.0001 Amp	9.55 mm
ST24C02B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8	5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V			e0		9.55 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.