FBGA EEPROM 264

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
LE2416RLBXA-SH	Onsemi	EEPROM	INDUSTRIAL	6	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	2048 words		1.8/3.3	8	GRID ARRAY, FINE PITCH	BGA6,2X3,16	EEPROMs	20	.4 mm	85 Cel	2KX8	2K	-40 Cel	TIN SILVER COPPER	1010MMMR	BOTTOM	HARDWARE	R-PBGA-B6	1		100000 Write/Erase Cycles		Not Qualified		I2C	16384 bit		e1	30	260	.000002 Amp
M24512-RCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	65536 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	524288 bit					.000001 Amp		5
M24512-RCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	65536 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	524288 bit					.000001 Amp		5
M95512-DRCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		8 mA	65536 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24128-BFCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V				.000002 Amp	1.805 mm
M24512-FCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000001 Amp	1.805 mm
M95512-WCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		8 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M95512-WCS3G/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-DRCS6TG/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1011DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M95512-WCS3TP/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24512-DWCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000002 Amp	1.805 mm
M24256-BWCS3TP/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit					.000005 Amp
M24256-BRCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1	5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	e3			.000001 Amp	1.805 mm
M24256-BFCS6P/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M24256-BWCS3TG/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit					.000005 Amp
M24512-DWCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000002 Amp	1.805 mm
M24512-FCS6TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000001 Amp	1.805 mm
M24256-DRCS6G/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1011DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M24256-BWCS6TG/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000002 Amp
M24512-FCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000001 Amp	1.805 mm
M24256-BRCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1	5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	e3			.000001 Amp	1.805 mm
M95512-WCS3G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BFCS6TG/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M95512-WCS3TG/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BWCS3P/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit					.000005 Amp
M24256-BWCS3G/A	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit					.000005 Amp
M24256-BWCS3TG/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000005 Amp
M95160-FCS6TP/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		3 mA	2048 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X3,16	EEPROMs	40	.4 mm	85 Cel	2KX8	2K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	16384 bit		e3			.000001 Amp
M95512-WCS3P/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BWCS6P/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000002 Amp
M24256-BWCS3TP/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000005 Amp
M24256-DRCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1011DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M95512-WCS3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24512-RCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	65536 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C	524288 bit					.000001 Amp		5
M24512-DWCS6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000002 Amp	1.805 mm
M24256-BWCS6G/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000002 Amp
M95512-WCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		8 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-DRCS6P/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1011DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000001 Amp
M24128-BFCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5	1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V				.000002 Amp	1.805 mm
M95512-WCS3P/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BRCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1	5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	e3			.000001 Amp	1.805 mm
M24256-BWCS3P/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000005 Amp
M95512-DRCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		8 mA	65536 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BRCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	32768 words		2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1	5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	e3			.000001 Amp	1.805 mm
M95512-WCS3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		6 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BWCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000002 Amp
M95512-WCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL		8 mA	65536 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel	MATTE TIN		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI	524288 bit		e3			.000005 Amp
M24256-BWCS3G/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	SERIAL		5 mA	32768 words		3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	125 Cel	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR	BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C	262144 bit		e3			.000005 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.