FBGA EEPROM 264

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M95512-DRCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			8 mA	65536 words			2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel			MATTE TIN			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI		524288 bit			e3				.000005 Amp
M95512-DRCS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			8 mA	65536 words			2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel			MATTE TIN			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI		524288 bit			e3				.000005 Amp
M24128-BFCS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		5 mA	16384 words	2.5		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	16KX8	16K	-40 Cel			TIN SILVER COPPER	1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8	1	5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C		131072 bit	1.7 V		e1	30	260		.000002 Amp	1.805 mm
M24256-BFCS6G/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			5 mA	32768 words			1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C		262144 bit			e3				.000001 Amp
M24512-DWCS6P/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		5 mA	65536 words			3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel				1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C		524288 bit	2.5 V						.000002 Amp	1.805 mm
M95512-WCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			8 mA	65536 words			3/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel			MATTE TIN			BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		SPI		524288 bit			e3				.000005 Amp
M24256-BFCS6TP/A	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			5 mA	32768 words			1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	32KX8	32K	-40 Cel			MATTE TIN	1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8	1		1000000 Write/Erase Cycles		Not Qualified		I2C		262144 bit			e3				.000001 Amp
M24128-BFCS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		5 mA	16384 words	2.5		1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.4 mm	85 Cel	16KX8	16K	-40 Cel				1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	1000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C		131072 bit	1.7 V						.000002 Amp	1.805 mm
M24512-RCS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	SERIAL			5 mA	65536 words			2/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	40	.254 mm	85 Cel	64KX8	64K	-40 Cel				1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8			1000000 Write/Erase Cycles		Not Qualified		I2C		524288 bit							.000001 Amp				5
M24512-FCS6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		5 mA	65536 words			1.8/5	8	GRID ARRAY, FINE PITCH	BGA8,3X5,17/10	EEPROMs	200	.4 mm	85 Cel	64KX8	64K	-40 Cel				1010DDDR		BOTTOM	HARDWARE	R-PBGA-B8		5.5 V	4000000 Write/Erase Cycles	1.4 mm	Not Qualified	5 ms	I2C		524288 bit	2.5 V						.000001 Amp	1.805 mm
K8S1215ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8P2815UQC-GI4BT	Samsung	EEPROM CARD	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32	Flash Memories		.8 mm	85 Cel	8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B80					Not Qualified			BOTTOM/TOP	134217728 bit		8	e1		260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
K8S1015ETC-DC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFWAGH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified			INDEPENDENT	17179869184 bit		2K	e3			NAND TYPE	.0001 Amp			76 ns	2.7	NO
K8S1215ETC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFWAGH6U4M-DIB6T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	50 mA	1073741824 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	1GX16	1G	-40 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified			INDEPENDENT	17179869184 bit		2K	e3			NAND TYPE	.00016 Amp			76 ns	2.7	NO
K8S1215ETC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315ETC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-SE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EBC-DE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115ETC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3		260	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EZC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFM1216Q2A-DEB5	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR		YES		CMOS	BALL	PARALLEL		64K	20 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES	MATTE TIN		YES	BOTTOM		R-XBGA-B63	1				Not Qualified				536870912 bit		1K	e3			NAND TYPE	.00005 Amp			76 ns	2.7	NO
KFM1G16Q2A-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified				1073741824 bit		1K	e3			NAND TYPE	.00005 Amp			76 ns	2.7	NO
K8S1115EBC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015EZC-FC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES				BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015EBC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFN2G16Q2A-DED80	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified				2147483648 bit		1K	e3			NAND TYPE	.00005 Amp			76 ns	2.7	NO
KFN2G16Q2A-DED8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified				2147483648 bit		1K	e3			NAND TYPE	.00005 Amp			76 ns	2.7	NO
K8S1015ETC-SC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EBC-DC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K9K2G08R0A-JCB0	Samsung	EEPROM CARD	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	20 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	70 Cel	256MX8	256M	0 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified				2147483648 bit		2K	e3			NAND TYPE	.0001 Amp			45 ns	2.7	NO
K8S1115EBC-SC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115ETC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3		260	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EBC-FC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K9K2G08R0A-JIB0T	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1				Not Qualified				2147483648 bit		2K	e3			NAND TYPE	.0001 Amp			45 ns	2.7	NO
K8S1015EBC-SE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1215EZC-SC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFM5616Q1A-DEB6	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories		.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B67	1				Not Qualified				262144 bit		512	e3			NAND TYPE	.00005 Amp			11.5 ns	2.7	NO
K8S1315ETC-DC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315ETC-DE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1215ETC-FE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015EBC-FE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1				Not Qualified			BOTTOM	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1215EZC-SE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015ETC-DC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315ETC-FC1FT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EZC-DC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	70 Cel	32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1				Not Qualified				536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015ETC-SE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1				Not Qualified			TOP	536870912 bit			e3			NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.