HVSON EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
CAT24C32HU3E-G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	32768 words	5	2/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		32KX1	32K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	IT ALSO OPERATES AT 0.1MHZ	e3			.000002 Amp	3 mm
CAT24C64ZD2I-G	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25	EEPROMs	100	.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V					.000001 Amp	4.9 mm	3.3
CAT24C16VP2IGT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		100	.5 mm	85 Cel		2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V		e4			.000001 Amp	3 mm
CAT24C64VP2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-XDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4	30	260	.000005 Amp	3 mm
CAT24C08TDIT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		64 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.8 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e4				3 mm
CAT24C64VP2E-T2	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		8KX8	8K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
CAT24C01VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		128X8	128	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e4		260	.000001 Amp	3 mm
CAT25010VP2A-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-XDSO-N8	1	5.5 V	.8 mm		5 MHz	2 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V		e4				3 mm
CAT25040VP2ET3D	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN	e3			.000002 Amp	3 mm
CAT24C02VP2EGT3A	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4			.000005 Amp	3 mm
CAT25640VP2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	125 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.8 mm		10 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V	100 YEAR DATA RETENTION	e4	30	260		3 mm
CAT24C04HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V		e4			.000005 Amp	3 mm
CAT24C32HU4I-T3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	85 Cel		4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-N8		5.5 V	.55 mm		1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION	e3				3 mm
CAT25320VP2IGT3C	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V		e4	30	260	.000001 Amp	3 mm
CAT24C08C4AI-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		64 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		64X16	64	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.55 mm		.4 MHz	2 mm		5 ms	I2C	1024 bit	1.8 V		e4				3 mm
CAT24C04VP2E-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	32 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		32X16	32	-40 Cel		1010DDMR	DUAL		HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	512 bit	1.7 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
CAT24C32HU4E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			100	.5 mm	125 Cel		4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-N8		5.5 V	.55 mm		1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	100 YEAR DATA RETENTION	e3				3 mm
CAT24C32BHU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX8	4K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		.4 MHz	2 mm		4 ms	I2C	32768 bit	1.55 V		e4				3 mm
CAT24C64VP2E-T3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		8KX8	8K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm
CAT24C02VP2E	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3	2/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		2KX1	2K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3			.000002 Amp	3 mm
CAT25256HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		32KX8	32K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
CAT24C01VP2E	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	2/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		1KX1	1K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e3			.000002 Amp	3 mm
CAT25040HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	4096 bit	2.5 V		e4				3 mm
CAT24C02HU4EGT3A	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4			.000005 Amp	3 mm
CAT25020VP2EGT3D	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		256X8	256	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN	e3			.000002 Amp	3 mm
CAT25320HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V		e4	30	260	.000001 Amp	3 mm
CAT24C03VP2I-T3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
NV25128MUW3VLTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		16KX8	16K	-40 Cel			DUAL			R-PDSO-N8		5.5 V	1 mm		20 MHz	2 mm		4 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT FREQUENCY 10 MHZ AT 2.5 TO 4.5 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED		3 mm
CAT25640VP2I	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		8KX8	8K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V		e3			.000001 Amp	3 mm
CAT24C21ZD4I	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	3	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	EEPROMs	100	.65 mm	85 Cel		128X8	128	-40 Cel	MATTE TIN	1010XXXR	DUAL			S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3			.000001 Amp	3 mm	2.7
CAT25080HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		1KX8	1K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		5 MHz	2 mm		5 ms	SPI	8192 bit	1.8 V		e4	30	260		3 mm
CAT24C128HU3I-T3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		16KX8	16K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-XDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V		e3	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
CAT25128HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8	1	5.5 V	.55 mm		5 MHz	2 mm		5 ms	SPI	131072 bit	2.5 V		e4				3 mm
CAT24C64ZD2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25		100	.65 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	65536 bit	1.8 V					.000002 Amp	4.9 mm	3.3
CAT24C64HU4I-T2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		100	.5 mm	85 Cel		8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-XDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e3			.000001 Amp	3 mm
CAT24C64ZD2I-T2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e3			.000001 Amp	4.9 mm
CAT25320HU3IGT3C	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V		e4			.000001 Amp	3 mm
CAT25128VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	4 mA	16384 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000001 Amp	3 mm
CAT24C01VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	2/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		1KX1	1K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e3			.000002 Amp	3 mm
CAT25010VP2IGT3D	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e4	30	260	.000002 Amp	3 mm
CAT24C64VP2I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		8KX8	8K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
CAT25320HU3IT3C	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-N8		5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	1.8 V		e3				3 mm
CAT24C32VP2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	125 Cel		4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	100 YEAR DATA RETENTION	e4		260	.000002 Amp	3 mm
CAT24C16TDIT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.8 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4				3 mm
CAT25320VP2IT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel		4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	1.8 V		e3				3 mm
CAT25256ZD2I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	4 mA	32768 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25	EEPROMs	100	.65 mm	85 Cel		32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION	e4		260	.000001 Amp	4.9 mm
CAT24C02VP2IGT3A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	EEPROMs	100	.5 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4			.000001 Amp	3 mm
NV25040MUW3VFT3G	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		512X8	512	-40 Cel			DUAL			R-PDSO-N8		5.5 V	.55 mm		20 MHz	2 mm		4 ms	SPI	4096 bit	4.5 V	IT ALSO OPERATES AT 2.5 TO 4.5V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY		NOT SPECIFIED	NOT SPECIFIED		3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.