HVSON EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24C32-RMC5P	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-20 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	32768 bit	1.8 V					3 mm
M24C02-DRMF3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	256X8	256	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	2048 bit	1.7 V					3 mm
M95320-DWMF4TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	32768 bit	2.5 V					3 mm
M95256-WMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	32768 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	32KX8	32K	-40 Cel			DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	3 mm	40 ns
M24C32-RMB3P/B	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	4KX8	4K	-40 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95512-DRMC3P/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		4 ms	SPI	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95256-WMC6G\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	262144 bit	2.5 V					3 mm
M24512-RMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	524288 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm		5
M24512-DWMC3G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			40	.5 mm	125 Cel	64KX8	64K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	524288 bit	2.5 V				.000005 Amp	3 mm		5
M24C16-DRMF8TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	50	.5 mm	105 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.8 mm	900000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	4 ms	I2C	16384 bit	1.8 V				.000001 Amp	3 mm
M93C56-MB3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	5	5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.000015 Amp	3 mm
M24C02-RMB6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24512-WMB3TG/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	40	.5 mm	125 Cel	64KX8	64K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				.000005 Amp	3 mm		5
M95128-RMC6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	16KX8	16K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	131072 bit	1.8 V					3 mm
M95512-WMC4TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	524288 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95640-DFMC6TP/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	65536 bit	1.7 V					3 mm
M24C02-WMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24C32-FMB6T/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V	e0			.000001 Amp	3 mm
M24512-DFMB3P/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms		524288 bit	1.7 V					3 mm		5
M24512-DWMB3P/AB	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			40	.5 mm	125 Cel	64KX8	64K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	524288 bit	2.5 V				.000005 Amp	3 mm		5
M95640-DRMB6G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95640-DWMB4TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		4 ms	SPI	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24512-DFMC3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		65536 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms		524288 bit	1.7 V					3 mm		5
M95128-RMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	16KX8	16K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	131072 bit	1.8 V					3 mm
M24C08-RMB3T/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V	e0			.000001 Amp	3 mm
M95080-RMB6TG/G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C04-FMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	512X8	512	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	I2C	4096 bit	1.7 V					3 mm
M24512-RMB3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	40	.5 mm	125 Cel	64KX8	64K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V				.000001 Amp	3 mm		5
M24C32-RMB3/C	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel	4KX8	4K	-40 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	e0				3 mm
M24C32-RMB6TG/C	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	4KX8	4K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95256-DFMC6TG\K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	32KX8	32K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	262144 bit	1.7 V					3 mm
M95080-WMB6TG/S	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	1KX8	1K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M93C56-MB3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	128 words	5	5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	125 Cel	128X16	128	-40 Cel			DUAL	SOFTWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.000015 Amp	3 mm
M24C08-WMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	1KX8	1K	-40 Cel		1010DMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24128-BRMB6G/C	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M24512-DRMB6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	40	.5 mm	85 Cel	64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	e4	30	260	.000001 Amp	3 mm		5
M24C02-WMB3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	3 mm
M95128-WMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	16KX8	16K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		20 MHz	2 mm		5 ms	SPI	131072 bit	2.5 V					3 mm
M93C56-WMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel	128X16	128	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		2 MHz	2 mm		5 ms	MICROWIRE	2048 bit	2.5 V					3 mm
M24256-BWMC6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2.5 mA	32768 words		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	4000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V				.000002 Amp	3 mm
M24128-BRMB6/C	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel	16KX8	16K	-40 Cel		1010DDDR	DUAL	HARDWARE	R-XDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				.000001 Amp	3 mm
M95160-RMB6TP/G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	2KX8	2K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	16384 bit	1.8 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M95320-DRMB6G/P	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	4KX8	4K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	32768 bit	1.8 V					3 mm
M24512-FMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	64KX8	64K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	524288 bit	1.7 V					3 mm		5
M95640-RMC4G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	145 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm			2 mm		4 ms	SPI	65536 bit	1.8 V					3 mm
M95640-RMC6TG/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	8KX8	8K	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	65536 bit	2.5 V		NOT SPECIFIED	NOT SPECIFIED		3 mm
M93C56-RMF3G/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		128 words	2.5		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	125 Cel	128X16	128	-40 Cel			DUAL		R-PDSO-N8		5.5 V	.8 mm		2 MHz	2 mm		4 ms	MICROWIRE	2048 bit	1.8 V					3 mm
M24512-FMB6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	65536 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			40	.5 mm	85 Cel	64KX8	64K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	524288 bit	1.7 V				.000001 Amp	3 mm		5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.