HVSON EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
25LC1024-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	200	1.27 mm	85 Cel			128KX8	128K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	4.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3	40	260	NOR TYPE	.000012 Amp	6 mm		5
24AA32AT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			4KX8	4K	-40 Cel	MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3		260		.000001 Amp	3 mm
CAT34C02HU4IGT4A	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16 words	5	1.8/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel	NO		16X16	16	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260		.000001 Amp	3 mm
CAT24C16HU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	1.8/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			16KX1	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	30	260		.000001 Amp	3 mm
24FC64T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3	40	260		.000001 Amp	3 mm		4.5
24AA024T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000001 Amp	3 mm		2.5
24FC64T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e4	40	260		.000001 Amp	3 mm		4.5
CAT24C32VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION		e4		260		.000001 Amp	3 mm
AT24C64D-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	65536 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4	40	260		.000006 Amp	3 mm		3
24FC64-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3	40	260		.000001 Amp	3 mm		4.5
AT24C32D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V	ALSO OPERATES AT 1.7V TO 5.5V @0.4MHZ		e4	40	260		.000006 Amp	3 mm		3
25LC1024T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	131072 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	200	1.27 mm	85 Cel			128KX8	128K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	6 ms	SPI	1048576 bit	4.5 V	200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD		e3	40	260	NOR TYPE	.000012 Amp	6 mm		5
AT24C16D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e4	40	260		.0000008 Amp	3 mm
M24C02-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.08X.12,20			50	.5 mm	125 Cel		TOTEM POLE	256X8	256	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	2048 bit	1.7 V								3 mm
M24C32-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX8	4K	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	32768 bit	1.8 V								3 mm
M34E02-FMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	1.8	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260		.000001 Amp	3 mm
24LC02BT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260		.000001 Amp	3 mm		5
25LC512T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	5	2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 10MHz		e3	40	260		.00001 Amp	6 mm		5
24AA16T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel			2KX8	2K	-40 Cel	MATTE TIN	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
M24C04-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			512X8	512	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		1 MHz	2 mm		4 ms	I2C	4096 bit	1.7 V								3 mm
24LC64T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e4	40	260		.000005 Amp	3 mm		4.5
CAT25640VP2I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	85 Cel			8KX8	8K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260		.000001 Amp	3 mm
24AA02T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260		.000001 Amp	3 mm		2.5
CAT24C02VP2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4		260		.000005 Amp	3 mm
M95640-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.6 mm		5 MHz	2 mm		5 ms	SPI	65536 bit	1.8 V			e4	30	260			3 mm
M95256-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			32KX8	32K	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	262144 bit	1.7 V								3 mm
AT24CS64-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel	NO	OPEN-DRAIN	8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e4	40	260		.000001 Amp	3 mm		5
25AA256-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	6 mA	32768 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			32KX8	32K	-40 Cel	Matte Tin (Sn) - annealed			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	5 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e3	40	260		.000001 Amp	6 mm		2.5
24AA256T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			200	.5 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	262144 bit	1.7 V			e4				.000005 Amp	3 mm		2.5
NV25020MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		3-STATE	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm		5 ms	SPI	2048 bit	1.8 V			e4	30	260		.000005 Amp	3 mm
NV25256MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms		262144 bit	2.5 V	IT ALSO OPERATES AT FREQUENCY 5 MHZ AT 1.8 TO 5.5 V SUPPLY VOLTAGE		e4	30	260			3 mm		5
NV25320MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		4096 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	2.5 V			e4	30	260			3 mm
NV25512MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		65536 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			64KX8	64K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		10 MHz	2 mm		4 ms		524288 bit	2.5 V			e4	30	260			3 mm		5
AT24C02C-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000006 Amp	3 mm		2.5
AT24C32E-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	4096 words	3		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1		R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e4	40	260		.0000008 Amp	3 mm		3
AT24CS16-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel	NO	3-STATE	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V			e4	40	260		.000001 Amp	3 mm		5
M93C66-RMC6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	40	.5 mm	85 Cel			256X16	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e4	30	260		.000002 Amp	3 mm
24LC256T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5	3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3	40	260		.000005 Amp	6 mm		4.5
AT24MAC402-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		2048 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	16384 bit	1.7 V			e4	40	260			3 mm
24AA024T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260		.000001 Amp	3 mm		2.5
24FC64-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3				.000001 Amp	3 mm		4.5
AT24CS01-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	40	260		.000001 Amp	3 mm		5
M95128-DRMF3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			16KX8	16K	-40 Cel				DUAL			R-PDSO-N8	1	5.5 V	.8 mm		10 MHz	2 mm		4 ms	SPI	131072 bit	1.8 V								3 mm
NV25080MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			100	.5 mm	125 Cel		3-STATE	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	10 MHz	2 mm		5 ms	SPI	8192 bit	2.5 V	IT ALSO OPERATES AT 1.8 TO 5.5 V SUPPLY VOLTAGE AT 5 MHZ FREQUENCY		e4	30	260		.000002 Amp	3 mm	80 ns	5
24FC64T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR		DUAL	1	HARDWARE	S-PDSO-N8		5.5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ		e3				.000001 Amp	3 mm		4.5
AT24C16D-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES 1.7V AT 100 KHZ STD MODE AND 400 KHZ @ FAST MODE		e4	40	260		.0000008 Amp	3 mm
AT25512Y7-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	2.7	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	40	1.27 mm	85 Cel			64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	4.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V			e4				.000003 Amp	6 mm
DS28E15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words	3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	512 bit	2.97 V			e3	30	260			3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.