HVSON EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
24FC02T-I/MUY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	2048 bit	1.7 V						.000001 Amp	3 mm	2.5
24LC16BHT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e4	40	260	.000001 Amp	3 mm	5
24LC16BT-E/MNY16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			200	.5 mm	125 Cel			2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	16384 bit	2.5 V			e4			.000005 Amp	3 mm	5
24LC64T-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel	Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260	.000005 Amp	3 mm	4.5
25AA512-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz		e3	40	260	.000001 Amp	6 mm	5
25AA512T-I/MF	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	65536 words	5		2.5/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel	MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	20 MHz	5 mm	Not Qualified	5 ms	SPI	524288 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz		e3	40	260	.000001 Amp	6 mm	5
25LC020AT-E/MC	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	125 Cel			256X8	256	-40 Cel	Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3	40	260	.000005 Amp	3 mm	5
25LC640AT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e4	40	260	.000001 Amp	3 mm	5
34AA02T-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260	.000005 Amp	3 mm	2.5
93AA46CT-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	64 words	2.5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	200	.5 mm	85 Cel	NO	TOTEM POLE	64X16	64	-40 Cel	Matte Tin (Sn)		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	3 MHz	2 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	1.8 V			e3	40	260	.000001 Amp	3 mm
93LC66AT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	5	YES		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			200	.5 mm	85 Cel	NO	TOTEM POLE	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		6 ms	MICROWIRE	4096 bit	2.5 V			e4	40	260	.000001 Amp	3 mm
93LC66BT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	YES		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			200	.5 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm		6 ms	MICROWIRE	4096 bit	2.5 V			e4	40	260	.000001 Amp	3 mm
AT24C04D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	512 words	3		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	16	e4	40	260	.0000008 Amp	3 mm	3	YES
AT24C08C-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V			e4	40	260	.000001 Amp	3 mm	5
AT24C32D-MAHM-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V	ALSO OPERATES AT 1.7V TO 5.5V @0.4MHZ		e4	40	260	.000006 Amp	3 mm	3
AT24CS02-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel	NO	3-STATE	2048X8	2048	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e4	40	260	.000001 Amp	3 mm	5
AT25160B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel	NO	3-STATE	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	5 MHz	2 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V			e4	40	260	.000006 Amp	3 mm	1.8
AT93C66B-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5		1.8/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	8	EEPROMs	100	.5 mm	85 Cel	NO	3-STATE	256X16	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL	1	SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V	ALSO OPERATES WITH 1.7V-5.5V AND 2.5V-5.5V SUPPLY		e4	40	260	.000001 Amp	3 mm	1.8
AT93C86AY6-10YH-1.8-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel			1024X16	1024	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	5.5 V	.6 mm		2 MHz	2 mm		10 ms	MICROWIRE	16384 bit	4.5 V	ALSO AVAILABLE 2.7V-5.5V OPERATES WITH 1MHZ AND 1.8V-5.5V OPERATES WITH 250KHZ		e4	40	260		3 mm
DS28E02Q+T&R	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	1.8		1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.65 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	1.75 V			e3	30	260		3 mm
DS28E35Q+T	Analog Devices	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			R-PDSO-N8	1	3.63 V	.8 mm			2 mm			1-WIRE	1024 bit	2.97 V			e3	30	260		3 mm
DS28E02Q+U	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.65 V	.8 mm			3 mm			1-WIRE	1024 bit	1.75 V			e3	30	260		3 mm
DS28E01Q-100+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	30	260		3 mm
DS28E01Q-100+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	1024 bit	2.8 V			e3	30	260		3 mm
DS28E25Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	4096 bit	2.97 V			e3	30	260		3 mm
DS28EL15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		512 words	1.8			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			512X1	512	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	1.89 V	.8 mm			3 mm			1-WIRE	512 bit	1.71 V			e3	30	260		3 mm
DS28E22Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		2048 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel			2KX1	2K	-40 Cel	Matte Tin (Sn) - annealed			DUAL			S-PDSO-N6	1	3.63 V	.8 mm			3 mm			1-WIRE	2048 bit	2.97 V			e3	30	260		3 mm
CAT93C46BHU4I-GT3	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		64 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.5 mm	85 Cel			64X16	64	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)			DUAL			R-PDSO-N8	1	5.5 V	.55 mm		4 MHz	2 mm			MICROWIRE	1024 bit	1.8 V	ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL		e4	30	260		3 mm
CAT93C57ZD4I-1.8-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	3 mm	2.7
CAT93C57ZD4I-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e3	40	260		3 mm
NV24C04MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		OPEN-DRAIN	4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDMR		DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		4 ms	I2C	4096 bit	2.5 V			e4	30	260		3 mm
CAT93C57ZD4A-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	3 mm	2.7
CAT93C46RVP2I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	64 words	5		2/5	16	SMALL OUTLINE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	85 Cel			64X16	64	-40 Cel	NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	2 MHz	2 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V			e4			.00001 Amp	3 mm
N34C04MU3ETG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.5			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			4KX1	4K	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8	1	3.6 V	.55 mm		1 MHz	2 mm		4 ms	I2C	4096 bit	2.2 V	ALSO AVAILABLE 1.7-3.6V OPERATES WITH 0.1MHZ AND 0.4MHZ		e4	30	260		3 mm
CAT93C57ZD4E-1.8-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	3 mm	2.7
NV24C02MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		OPEN-DRAIN	2KX1	2K	-40 Cel		1010DDDR		DUAL		HARDWARE	R-PDSO-N8		5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		4 ms	I2C	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
CAT93C57ZD4E-1.8-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	3 mm	2.7
CAT34C02HU4I-GT5	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				100	.5 mm	85 Cel			256X8	256	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			R-PDSO-N8		5.5 V	.55 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	100 YEAR DATA RETENTION		e4				3 mm
CAT93C86ZD4I-GT2	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN		e3			.00001 Amp	3 mm
CAT93C86ZD4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			1KX16	1K	-40 Cel	MATTE TIN			DUAL		HARDWARE/SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	4.5 V	IT ALSO OPERATES AT 1MHZ AT 2.5MIN		e3			.00001 Amp	3 mm
NV24C16MUW3VLTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	.5 mA	2048 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20			100	.5 mm	125 Cel			2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		4 ms	I2C	16384 bit	1.7 V			e4	30	260	.000002 Amp	3 mm
CAT93C66ZD4I-GT3E	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	85 Cel			256X16	256	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	3 mm
CAT93C56ZD4A-1.8-GREVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	105 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8		5.5 V	.8 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e4				3 mm
CAT93C66VP2E-T2	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	8	EEPROMs	100	.5 mm	125 Cel			256X16	256	-40 Cel	Matte Tin (Sn)			DUAL		SOFTWARE	R-XDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	.25 MHz	2 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V			e3			.00001 Amp	3 mm
CAT93C57ZD4E-GT3E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	125 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	3 mm	2.7
CAT93C57ZD4I-1.8-GT2REVE	Onsemi	EEPROM	INDUSTRIAL	8	HVSON	SQUARE	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		8			.65 mm	85 Cel			128X16	128	-40 Cel	NICKEL PALLADIUM GOLD			DUAL			S-XDSO-N8		5.5 V	.8 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e4	40	260		3 mm
NV24C32MUW3VTBG	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	4096 words	3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	125 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V			e4	30	260	.000005 Amp	3 mm
CAT93C57ZD4A-1.8-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,25	8	EEPROMs	100	.65 mm	105 Cel			128X16	128	-40 Cel	MATTE TIN			DUAL		SOFTWARE	S-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	3 mm	2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.