SOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24FC01T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	1024 bit	1.7 V					.000003 Amp	4.9 mm		2.5
24FC01T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	1024 bit	1.7 V					.000001 Amp	4.9 mm		2.5
24LC01BH-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e3	30	260	.000001 Amp	4.9 mm		4.5
24LC024-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V		e3	40	260	.000001 Amp	4.9 mm
24LC024/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2.2/5.5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	256X8	256	0 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	2.5V TO 5.5V @ 0.1MHz	e3	30	260	.00005 Amp	4.9 mm		5
24LC08B-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5			8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		Matte Tin (Sn)	1010XMMR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V		e3	40	260	.000001 Amp	3 mm		5
24LC1025T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel		Matte Tin (Sn)	1010MDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	1048576 bit	2.5 V		e3	30	260	.000005 Amp	4.9 mm		5
24LC64-E/SNG	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3	40	260	.000005 Amp	4.9 mm
24LCS22A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010000R		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V		e3	30	260	.0001 Amp	4.9 mm		5
24LCS52-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		2.5/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.2 V		e3	30	260	.000001 Amp	4.9 mm		5
25AA128-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V		e3	30	260	.000001 Amp	4.9 mm		2.5
25LC020AT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel			256X8	256	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e3	40	260	.000005 Amp	3 mm		5
25LC080AT-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			1KX8	1K	-40 Cel		Matte Tin (Sn)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.91 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e3			.000001 Amp	4.9 mm
25LC128-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			16KX8	16K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	131072 bit	2.5 V					.000005 Amp	4.9 mm		5
25LC256T-H/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	150 Cel		3-STATE	32KX8	32K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	6 ms	SPI	262144 bit	4.5 V	OPERATES WITH 2.5V MIN @ 3MHZ	e3	30	260	.000001 Amp	4.9 mm		5
93LC86C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3		3/5	16	SMALL OUTLINE	SOP8,.23	8	EEPROMs	200	1.27 mm	85 Cel			1KX16	1K	-40 Cel		MATTE TIN			DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	2.5 V		e3	30	260	.0001 Amp	4.9 mm		5
AT24C256C-SSPD-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	125 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V		e4			.000006 Amp	4.925 mm		5
AT25010B-SSHL-T-899	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	128 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	NO	3-STATE	128X8	128	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm		5 ms	SPI	1024 bit	1.8 V					.0000005 Amp	4.925 mm		1.8
AT25640AN-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	2	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.7 V		e3	40	260	.000002 Amp	4.9 mm
AT25M01-SHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	131072 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.16 mm	1000000 Write/Erase Cycles	20 MHz	5.24 mm	Not Qualified	5 ms	SPI	1048576 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.7V TO 5.5V @5MHZ	e4			.000005 Amp	5.29 mm		5
AT28C010E-12JU-235	Microchip Technology	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel					DUAL			R-PDSO-G32		5.5 V	3.556 mm			11.43 mm		10 ms		1048576 bit	4.5 V						13.97 mm	120 ns	5
AT28C64-15SC	Microchip Technology	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	NO	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	10	1.27 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL			R-PDSO-G28	2	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE	e0		240	.0001 Amp	17.9 mm	150 ns	5	YES
BR93L46RFJ-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	2.5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.9 mm
CAT25M01XI-T2	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel			128KX8	128K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G8	3	5.5 V	2.03 mm		5 MHz	5.23 mm		5 ms	SPI	1048576 bit	1.8 V		e3	40	260		5.255 mm
CAT64LC10J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			64X16	64	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V	SPI BUS INTERFACE	e0			.000003 Amp	4.9 mm
CAT64LC20S	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			128X16	128	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V	SPI BUS INTERFACE	e0			.000003 Amp	4.9 mm
CAT64LC40J	Onsemi	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel			256X16	256	0 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit						.000003 Amp
CAT64LC40VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE					1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified		SPI	262144 bit	2.5 V		e4	30	260		4.9 mm
M24256-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel			32KX8	32K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	900000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	262144 bit	1.8 V					.000001 Amp	4.9 mm
M24512-WMN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e4			.000002 Amp	4.9 mm
M24C64-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	2.5 V		e0			.000002 Amp	4.9 mm
M95128-DFMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words			1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
PCF8582C-2T/03	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.7		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8582C-2T/03,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8594C-2T/02,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V		e4		260	.0000035 Amp	4.9 mm
S-93A86BD0A-J8T2U3	Ablic	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE					1.27 mm	125 Cel			1KX16	1K	-40 Cel		TIN			DUAL			R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm		4 ms	3-WIRE	16384 bit	2.5 V		e3				5.02 mm
X25160SI-2.7	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	2.7 V	1 MILLION ENDURANCE CYCLES; 100 YEARS DATA RETENTION	e0			.000001 Amp	4.9 mm
X25160SI-2.7T1	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE				100	1.27 mm	85 Cel		3-STATE	2KX8	2K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	2.7 V	1 MILLION ENDURANCE CYCLES; 100 YEARS DATA RETENTION					4.9 mm
24AA02T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz	e3	40	260	.000001 Amp	3 mm		2.5
24AA64FT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V		e3	30	260	.000001 Amp	4.9 mm		5
24C02CT-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	1.5 ms	I2C	2048 bit	4.5 V		e3	40	260	.000005 Amp	3 mm		5
24C02CT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel			256X8	256	0 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	30	260	.00005 Amp	4.9 mm		5
24CS512-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel			1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	3.4 MHz	5.25 mm		5 ms	I2C	524288 bit	2.5 V					.000003 Amp	5.26 mm
24CS512T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words				8	SMALL OUTLINE	SOP8,.19			200	.65 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3.4 MHz	3 mm		5 ms	I2C	524288 bit	2.5 V		e3			.000003 Amp	3 mm
24FC128-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS	e3	40	260	.000001 Amp	4.9 mm
24FC128-I/SNRVA	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5			8	SMALL OUTLINE				200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn)			DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V	1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS	e3	40	260		4.9 mm
24FC64T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ	e3	30	260	.000001 Amp	4.9 mm		4.5
24LC04B-I/SNRVC	Microchip Technology	EEPROM	INDUSTRIAL	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5			8	SMALL OUTLINE	SOP8,.25			200	1.27 mm	85 Cel	NO		512X8	512	-40 Cel		MATTE TIN			DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V		e3			.000005 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.