SOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
24LC1026T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words		4.5			8	SMALL OUTLINE	SOP8,.3			200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	40	260		.000005 Amp	5.26 mm		4.5
24LC1026T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words		4.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		4.5
24LC128T-I/SMG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	40	260		.000001 Amp	5.26 mm		4.5
24LC32A-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel			4KX8	4K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	5.26 mm
24LC32AT-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words		5			8	SMALL OUTLINE				200	1.27 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		Matte Tin (Sn) - annealed			DUAL			R-PDSO-G8	1	5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260			5.26 mm
24LC64T-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	3 mm		4.5
24LC64T-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words		4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn) - annealed	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260		.000005 Amp	5.245 mm		4.5
24VL024/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-20 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz		e3	30	260		.000001 Amp	4.9 mm		2.5
25AA010A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words		5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		3-STATE	128X8	128	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	ALSO OPERATES AT 2.5V TO 4.5V @5MHZ AND 1.8V TO 2.5V @3MHZ		e3	30	260		.000001 Amp	4.9 mm		5
25AA020A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3	40	260		.000001 Amp	3 mm		2.5
25C040-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words		5		5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel			512X8	512	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	4.5 V			e3	30	260		.000005 Amp	4.9 mm		5
25LC020AT-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			256X8	256	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e3	40	260		.000001 Amp	3 mm		5
25LC640AT-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words		5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel			8KX8	8K	-40 Cel					DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	65536 bit	2.5 V							.000005 Amp	4.9 mm		5
93AA66C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5	YES	2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		MATTE TIN		YES	DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	4096 bit	1.8 V	ALSO CONFIGURABLE AS 512 X 8		e3	30	260		.000001 Amp	4.9 mm
93C46A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	4.5 V			e3	30	260		.000001 Amp	4.9 mm
93C66A-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		2.5	YES	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	512X8	512	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	2 ms	MICROWIRE	4096 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm
AT24C01BN-SH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel			128X8	128	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			4.9 mm
AT24C02N-10SQ-2.7	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.7 V			e3	40	260		.000004 Amp	4.9 mm
AT24C04AN-10SU-2.7	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel			1010DDMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES						.000004 Amp	4.9 mm		5
AT24C04N-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.9 mm
AT24C08N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words		3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.7 V	DATA RETENTION = 100 YEARS		e0				.000004 Amp	4.9 mm
AT24C1024W-10SU-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words		3		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		Matte Tin (Sn)	10100DMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.16 mm	100000 Write/Erase Cycles	.4 MHz	5.24 mm	Not Qualified	10 ms	I2C	1048576 bit	2.7 V			e3		260		.000003 Amp	5.29 mm
AT24C256N-10SI-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words		3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD	10100DDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	I2C	262144 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION 40 YEARS		e0				.0000005 Amp	4.9 mm
AT25256B-SHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V			e4				.000003 Amp	4.925 mm
AT28HC256-12SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	MIL-STD-883	GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G28	3	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e3	30	260		.0003 Amp	17.9 mm	120 ns	5	YES
AT28HC256E-90SU	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	80 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL			R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		262144 bit	4.5 V		64	e3	30	260		.0003 Amp	17.9 mm	90 ns	5	YES
AT93C86A-10SU-1.8-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5			16	SMALL OUTLINE	SOP8,.23	8		100	1.27 mm	85 Cel			1KX16	1K	-40 Cel					DUAL	1		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		10 ms	3-WIRE	16384 bit	4.5 V	2.7V TO 5.5V @ 1MHz AND 1.8V TO 5.5V @ 0.25MHz						.000015 Amp	4.9 mm		5
BR93C56-WMN6TP	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words				3/5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			2KX1	2K	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.9 mm
CAT24AA01WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words				2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e4	30	260		.000001 Amp	4.9 mm
CAT24C32WI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words		3.3		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V	ALSO OPERTAES 1.7V AT 100 KHZ		e4	30	260		.000001 Amp	4.9 mm
CAT64LC40WI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words				3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X16	256	-40 Cel		TIN			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	4096 bit				e3		260		.000003 Amp
CAT64LC40WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE					1.27 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	6 V	1.75 mm			3.9 mm	Not Qualified		SPI	262144 bit	2.5 V			e4	30	260			4.9 mm
FM24C04ULM8	Fairchild Semiconductor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel			512X8	512	0 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	2.7 V			e0				.00001 Amp	4.9 mm
M24C16-WMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e0				.000001 Amp	4.9 mm
M24C32-RMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words		2.5			8	SMALL OUTLINE					1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			e4					4.9 mm
M24C64-WMN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED		.000002 Amp	4.9 mm
M24M01-RMW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	262144 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel			256KX8	256K	-40 Cel		Matte Tin (Sn) - annealed	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	.4 MHz		Not Qualified	5 ms	I2C	2097152 bit	1.8 V			e3	30	260		.000001 Amp
M93S46-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e4				.00001 Amp	4.9 mm
M95320-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e4				.000002 Amp	4.9 mm		1.8
PCF8582C-2T/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e4	30	260		.0000035 Amp	4.9 mm
PCF8582C2D-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel			256X8	256	-40 Cel			1010DDDR		DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				40	260			4.9 mm
X25020S	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		Tin/Lead (Sn/Pb)			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020S-2.7	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	2.7 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS		e0				.00015 Amp	4.9 mm
X25020SIT2	Xicor	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE				100	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X25020ST1	Xicor	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE				100	1.27 mm	70 Cel		3-STATE	256X8	256	0 Cel					DUAL			R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V	100K ENDURANCE CYCLES; DATA RETENTION = 100 YEARS							4.9 mm
X28HC256SI-12T1	Intersil	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL			R-PDSO-G28	1	5.5 V	2.65 mm	1000000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION	128	e0				.0005 Amp	17.9 mm	120 ns	5	YES
XC1701LSO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3		3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	85 Cel		3-STATE	1MX1	1M	-40 Cel		Tin/Lead (Sn85Pb15)			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm		15 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS		e0	30	225		.00005 Amp	12.827 mm
XC18V01SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words		3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	20	1.27 mm	85 Cel			128KX8	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified			1048576 bit	3 V			e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.