SOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
BR24G32F-3AGTE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words				8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-40 Cel		TIN		DUAL			R-PDSO-G8		5.5 V	1.71 mm		.4 MHz	4.4 mm		5 ms	I2C	32768 bit	1.6 V	SEATED HGT CALCULATED	e3					5 mm
BR24G64F-5E2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.71 mm		1 MHz	4.4 mm		5 ms	I2C	65536 bit	1.6 V			NOT SPECIFIED	NOT SPECIFIED			5 mm
BR24L01AF-WE2	ROHM	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel		TIN COPPER	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.71 mm	1000000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e2	10	260		.000002 Amp	5 mm
CAT24C02WI-GA	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4				.000001 Amp	4.9 mm
CAT24WC64WI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words				8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm		10 ms	I2C	65536 bit	2.5 V						.000001 Amp	4.9 mm
CAT25160VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel		2KX8	2K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260		.000002 Amp	4.9 mm
CAT28C16AW-20T	Onsemi	EEPROM	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4		EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	0 Cel	NO	TIN		DUAL			R-PDSO-G24	1	5.5 V	2.65 mm	10000 Write/Erase Cycles		7.5 mm	Not Qualified	10 ms		16384 bit	4.5 V		e3	30	260		.0001 Amp	15.4 mm	200 ns	5	YES
CAT28C16AWI90	Onsemi	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5		5	8	SMALL OUTLINE	SOP24,.4		EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO			DUAL			R-PDSO-G24		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		16384 bit	4.5 V			NOT SPECIFIED	260		.0001 Amp	15.4 mm	90 ns	5	YES
CAT28C16AWI-90	Catalyst Semiconductor	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	35 mA	2048 words	5	NO	5	8	SMALL OUTLINE	SOP24,.4		EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		DUAL			R-PDSO-G24	1	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		16384 bit	4.5 V		e3				.0001 Amp	15.4 mm	90 ns	5	YES
CAT93C46VI	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	64 words			2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		64X16	64	-40 Cel		TIN		DUAL		SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e3		260		.000001 Amp
CAT93C46VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	64 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	1 ms	MICROWIRE	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260		.000001 Amp	4.9 mm
CAV25080VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel		1KX8	1K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	8192 bit	2.5 V	100 YEAR DATA RETENTION	e4	NOT SPECIFIED	NOT SPECIFIED		.000005 Amp	4.9 mm
DS28E05R+U	Analog Devices	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.4 mA	64 words	3.3		3/3.3	1	SMALL OUTLINE	TO-236		EEPROMs	10	.95 mm	85 Cel		64X1	64	-40 Cel		Matte Tin (Sn) - annealed		DUAL			R-PDSO-G3	1	3.63 V	1.12 mm	1000 Write/Erase Cycles		1.3 mm	Not Qualified		1-WIRE	64 bit	2.97 V		e3	30	260			2.92 mm
FT24C04A-USR-T	Fremont Micro Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE					1.27 mm	85 Cel		512X8	512	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		5 ms	I2C	4096 bit	2.5 V	IT ALSO HAVE FREQUENCY 0.4 MHZ OPERATES AT 1.8V		NOT SPECIFIED	NOT SPECIFIED			4.9 mm
IS24C08A-2GLI	Integrated Silicon Solution	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel		MATTE TIN	1010DMMR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e3	10	260		.000001 Amp	4.9 mm
M24512-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	524288 bit	1.8 V		e4		260		.00001 Amp	4.9 mm		5
M24C01-RMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e4	30	260		.000001 Amp	4.9 mm
M24C02-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel		256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	900000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	4 ms	I2C	2048 bit	1.8 V						.000001 Amp	4.9 mm
M24C04-DRMN3TP/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE					1.27 mm	125 Cel		512X8	512	-40 Cel				DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm		4 ms	I2C	4096 bit	1.7 V							4.9 mm
M24C64-RMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		Tin/Lead (Sn85Pb15)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V		e0				.0000002 Amp	4.9 mm
M24C64-RMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V		e0				.0000002 Amp	4.9 mm
M95080-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e4				.000001 Amp	4.9 mm
M95512-DRMN8TP/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	50	1.27 mm	105 Cel		64KX8	64K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	900000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	4 ms	SPI	524288 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		.000001 Amp	4.9 mm
M95M01-RMW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	131072 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		128KX8	128K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.5 mm	1000000 Write/Erase Cycles	5 MHz	5.62 mm	Not Qualified	5 ms	SPI	1048576 bit	1.8 V		e3	30	260		.000003 Amp
M95M04-DWMN3TP/V	STMicroelectronics	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	524288 words	3.6			8	SMALL OUTLINE	SOP8,.25			10	1.27 mm	125 Cel		512KX8	512K	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		4 ms	SPI	4194304 bit	2.9 V						.00003 Amp	4.9 mm
PCA24S08D/DG,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	1024 words			3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel			10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000015 Amp
PCF8582C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4				.0000035 Amp	4.9 mm
PCF8582C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel			1010DDDR	DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			40	260			4.9 mm
S-93C46BD0H-J8T2G	Ablic	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words	5			16	SMALL OUTLINE					1.27 mm	105 Cel		64X16	64	-40 Cel				DUAL			R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	8 ms	MICROWIRE	1024 bit	1.8 V			10	260			5.02 mm
XC18V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	131072 words	3.3		2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	85 Cel		128KX8	128K	-40 Cel		Tin/Lead (Sn85Pb15)		DUAL			R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	33 MHz	7.5 mm	Not Qualified			1048576 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.8 mm	15 ns
24AA01/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128	0 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V		e3	30	260		.0001 Amp	4.9 mm		5
24AA014-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		128X8	128	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA02/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V		e3	30	260		.0001 Amp	4.9 mm		5
24AA024T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	40	260		.000001 Amp	3 mm		2.5
24AA024T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e3	30	260		.000001 Amp	4.9 mm		2.5
24AA64-E/SM	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	J BEND	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5			8	SMALL OUTLINE	SOP8,.10			200	1.27 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-J8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm		5 ms	I2C	65536 bit	2.5 V		e3	40	260		.000005 Amp	5.26 mm		4.5
24C02C-I/SNG	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	1 ms	I2C	2048 bit	4.5 V		e3	40	260		.00005 Amp	4.9 mm
24LC02BT/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		MATTE TIN	1010XXXR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V		e3	30	260		.0001 Amp	4.9 mm		5
24LC128T-E/SN16KVAO	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	125 Cel	OPEN-DRAIN	16KX8	16K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	131072 bit	2.5 V						.000005 Amp	4.9 mm		5
24LC515-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel		64KX8	64K	-40 Cel		MATTE TIN	1010MDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e3	40	260		.000005 Amp	5.245 mm		4.5
24VL014/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260		.000001 Amp	4.9 mm		2.5
25AA320A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 1.8V MIN @ 3 MHZ	e3	30	260		.000005 Amp	4.9 mm		5
25LC160C-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel		2KX8	2K	-40 Cel		Matte Tin (Sn)		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e3	30	260		.000001 Amp	4.9 mm		5
93LC66AT-I/SN15KVAO	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5			8	SMALL OUTLINE	SOP8,.23			200	1.27 mm	85 Cel		512X8	512	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		6 ms	MICROWIRE	4096 bit	2.5 V	1.8V TO 2.5V @ 1MHz					.000001 Amp	4.9 mm		5
AT24C32AN-10SU-2.7	Atmel	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		4KX8	4K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	2.7 V		e3	40	260		.000002 Amp	4.9 mm
AT24CS02-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V		e4	40	260		.000006 Amp	4.925 mm		2.5
AT24MAC602-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V		e4				.000006 Amp	4.925 mm		2.5
CAT25128VI-G	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	16384 words	5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V		e4	30	260		.000001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.