TSSOP EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)	Data Polling
CAT93C56YA-T2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm	2.7
CAT93C76YA-TE13REVA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	105 Cel		512X16	512	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified		MICROWIRE	8192 bit	2.5 V			e3				4.4 mm
CAT93C57YE-T2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm	2.7
CAT34C02YI-GT5	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16 words	5		1.8/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel	NO	16X16	16	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	256 bit	1.7 V	100 YEAR DATA RETENTION	16	e4	30	260	.000001 Amp	4.4 mm
CAT93C56YA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	6 V	1.1 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3			.00001 Amp	4.4 mm
CAT93C57UI-REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128KX16	128K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2097152 bit	2.5 V			e0				4.4 mm
CAT1640YI-25-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	8192 words			3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	85 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit				e4		260	.00004 Amp
CAT93C57UI-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C66YE-T2E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm
CAT64LC40UATE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	16	SMALL OUTLINE	TSSOP8,.25		EEPROMs	100	.65 mm	105 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V			e0			.000003 Amp	4.4 mm
CAT93C56YA-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e3				4.4 mm
CAT93C57UA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	105 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
NV24C64DTUTG	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	105 Cel		8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	65536 bit	1.7 V			e4	30	260		4.4 mm
CAT64LC40YTE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	16	SMALL OUTLINE	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel		256X16	256	0 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V			e3			.000003 Amp	4.4 mm
CAT93C56YI-REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e3				4.4 mm
CAT93C57YA-1.8-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.25MHZ AT 1.8MIN		e3			.00001 Amp	4.4 mm	2.7
NV24C64DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		NO		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25				.65 mm	125 Cel	NO	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	YES	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		4 ms	I2C	65536 bit	1.7 V		32	e4	30	260	.002 Amp	4.4 mm		YES
CAT64LC10Y-TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words	3		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel		64X16	64	0 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V			e3			.000003 Amp	4.4 mm
CAT93C66YE-1.8-T2	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	125 Cel		256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit							.00001 Amp
CAT64LC20URI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0			.000003 Amp	4.4 mm
CAT93C66YI-TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.4 mm
CAT93C56YE-E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm	2.7
CAT93C56YE-GT2E	Onsemi	EEPROM CARD	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm	2.7
CAT93C57YE-1.8T2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e3	40	260		4.4 mm
CAT93C57YA-GT2E	Onsemi	EEPROM CARD	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.4 mm	2.7
CAT1021ZI-42-T3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	85 Cel		256X8	256	-40 Cel		TIN	1010000R		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e3		260	.00006 Amp
CAT93C57YI-1.8T2REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e3	40	260		4.4 mm
CAT1021ZI-45-T3	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	85 Cel		256X8	256	-40 Cel		TIN	1010000R		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e3		260	.00006 Amp
CAT93C57YI-GT3REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e4				4.4 mm
CAT93C57YE-GT2REVE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e4				4.4 mm
CAT93C57YI-1.8-T2	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e3			.00001 Amp
CAT93C86UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel		1KX16	1K	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93HC46UA-1.8	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	105 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.25 MHz	3 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V			e0			.00001 Amp	4.4 mm
CAT93C76YI-REVA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		512X16	512	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V			e3				4.4 mm
CAT93C57U-1.8TE13	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
N24C16DTET3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		16KX1	16K	-40 Cel					DUAL			R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	16384 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
CAT93C76YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	NO	2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel	NO	512X16	512	-40 Cel	NO	NICKEL PALLADIUM GOLD		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	1 ms	MICROWIRE	8192 bit	1.8 V			e4	30	260	.00001 Amp	4.4 mm		YES
CAT93C56UI-1.8TE13	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C57YA-1.8-GT2	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	105 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e3			.00001 Amp
CAT93C76UA-1.8REVA	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	105 Cel		512X16	512	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	8192 bit	1.8 V			e0				4.4 mm
CAT93C66UE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.4 mm
CAT93C86Y	Onsemi	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	70 Cel		1KX16	1K	0 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.2 mm		1 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.4 mm
CAT93C76YI	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5	NO		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8		100	.65 mm	85 Cel	NO	512X16	512	-40 Cel	NO			YES	DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		1 ms	MICROWIRE	8192 bit	1.8 V						.00001 Amp	4.4 mm		YES
CAT93C57YE-G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.635 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4		260	.00001 Amp
CAT93C86YE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel		1KX16	1K	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8	1	6 V	1.1 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3				4.4 mm
CAT1021ZI-30-G	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words	3.3		3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010000R		DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e4		260	.00006 Amp
CAT93C56YI-T3REVE	Onsemi	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL			R-PDSO-G8		5.5 V	1.2 mm		.5 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V			e3				4.4 mm
CAT93C66YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	125 Cel		256X16	256	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified		MICROWIRE	4096 bit	1.8 V	100 YEAR DATA RETENTION			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.