TSSOP EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25C11YE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.00001 Amp

4.4 mm

CAT25C03GZ

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

256X8

256

0 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

S-PDSO-G8

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e4

40

260

3 mm

CAT24WC01GZIREV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC02GZI-1.8

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C01BUI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

128 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

TIN LEAD

DUAL

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

1024 bit

2.5 V

e0

.000001 Amp

4.4 mm

CAT24C21ZI-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

S-PDSO-G8

1

5.5 V

1.1 mm

.4 MHz

3 mm

Not Qualified

5 ms

I2C

1024 bit

2.5 V

e3

3 mm

CAT25C08YE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

1024 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

1KX8

1K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

8192 bit

2.5 V

e3

.00001 Amp

4.4 mm

CAT25C16YE-1.8

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

2048 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

16384 bit

1.8 V

e3

.00001 Amp

4.4 mm

CAT24WC04YREV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC04ZI-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT25C32Y14A

Onsemi

EEPROM

INDUSTRIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

4096 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

105 Cel

4KX8

4K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

3 MHz

4.4 mm

Not Qualified

10 ms

SPI

32768 bit

2.5 V

e3

.00001 Amp

5 mm

CAT25256YE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

4 mA

32768 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

32KX8

32K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

1000000 Write/Erase Cycles

Not Qualified

SPI

262144 bit

e3

.000003 Amp

CAT24WC02UI-TE13REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

85 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT25C65U14E-1.8TE13

Onsemi

EEPROM

AUTOMOTIVE

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

8192 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

125 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

4.4 mm

Not Qualified

10 ms

SPI

65536 bit

1.8 V

e0

.00001 Amp

5 mm

CAT25010R-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

128X8

128

0 Cel

TIN LEAD

DUAL

S-PDSO-G8

1

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e0

3 mm

CAT24WC04GYI-1.8TE13REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC02GZE-1.8REV-E

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24AC128YE-TE13

Onsemi

EEPROM

AUTOMOTIVE

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

125 Cel

16KX8

16K

-40 Cel

TIN

1010DDDR

DUAL

HARDWARE

R-PDSO-G14

6 V

1.1 mm

1000000 Write/Erase Cycles

.4 MHz

4.4 mm

Not Qualified

5 ms

I2C

131072 bit

2.5 V

e3

.00001 Amp

5 mm

CAT24WC01ZA-1.8TE13REV-E

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

105 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC04Y-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT25C05GYA-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

2.5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

105 Cel

512X8

512

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

6 V

1.2 mm

1 MHz

3 mm

Not Qualified

10 ms

SPI

4096 bit

1.8 V

e4

40

260

4.4 mm

CAT24WC02YE-1.8

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C01BGZA-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

105 Cel

128X8

128

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

1024 bit

e0

.000001 Amp

CAT25C65U14E-1.8

Onsemi

EEPROM

AUTOMOTIVE

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

8192 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

125 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

4.4 mm

Not Qualified

10 ms

SPI

65536 bit

1.8 V

e0

.00001 Amp

5 mm

CAT25C03GYA

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

105 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

6 V

1.2 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e4

4.4 mm

CAT24WC164UE-1.8TE13

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

2KX8

2K

-40 Cel

TIN LEAD

1DDDMMMR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

16384 bit

1.8 V

e0

.00001 Amp

4.4 mm

CAT24WC164UE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

2KX8

2K

-40 Cel

TIN LEAD

1DDDMMMR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

16384 bit

2.5 V

e0

.00001 Amp

4.4 mm

NV25080DTVFT3G

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1024 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

1KX8

1K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.2 mm

20 MHz

3 mm

4 ms

SPI

8192 bit

4.5 V

IT ALSO OPERATES AT 2.5 TO 4.5 V SUPPLY VOLTAGE AT 10 MHZ FREQUENCY

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

CAT24WC05GYA-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

105 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.0000009 Amp

CAT25C11R-1.8TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

70 Cel

128X8

128

0 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

1024 bit

1.8 V

e0

.000001 Amp

3 mm

CAT25020ZA-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

S-PDSO-G8

1

5.5 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

1.8 V

e4

3 mm

CAT25C65U14A-1.8

Onsemi

EEPROM

INDUSTRIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

8192 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

105 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

4.4 mm

Not Qualified

10 ms

SPI

65536 bit

1.8 V

e0

.00001 Amp

5 mm

CAT24WC03GZI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.0000009 Amp

CAT25C11ZE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

125 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.00001 Amp

3 mm

CAT25C11GZE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

128X8

128

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

S-PDSO-G8

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e4

40

260

3 mm

CAT25C03GYE-1.8

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

2.5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

6 V

1.2 mm

1 MHz

3 mm

Not Qualified

10 ms

SPI

2048 bit

1.8 V

e4

4.4 mm

CAT25010ZI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

1

6 V

1.1 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.000002 Amp

3 mm

CAT24WC04ZI-1.8TE13REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24C21YI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

NICKEL PALLADIUM GOLD

1010XXXR

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

1024 bit

2.5 V

e4

30

260

.000001 Amp

4.4 mm

CAT24C01YE-GT3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

3.3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

128X8

128

-40 Cel

NICKEL PALLADIUM GOLD

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

1024 bit

1.8 V

e4

30

260

.000002 Amp

4.4 mm

CAT25C05YE-TE13

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

512 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

512X8

512

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

4096 bit

2.5 V

e3

4.4 mm

CAT25C03GYI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

256X8

256

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

6 V

1.2 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e4

4.4 mm

CAT24WC02GZI-TE13REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC01Z-1.8REV-C

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC03Z

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

256 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

70 Cel

256X8

256

0 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

10 ms

I2C

2048 bit

2.5 V

e3

.0000009 Amp

3 mm

CAT24WC05GZA-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

105 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.0000009 Amp

CAT24WC164RA-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

3

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

105 Cel

2KX8

2K

-40 Cel

TIN LEAD

1DDDMMMR

DUAL

HARDWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

16384 bit

2.5 V

e0

.00001 Amp

3 mm

CAT28C512HI-15T

Onsemi

EEPROM

INDUSTRIAL

32

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

65536 words

5

YES

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP32,.8,20

EEPROMs

.5 mm

85 Cel

64KX8

64K

-40 Cel

NO

DUAL

R-PDSO-G32

5.5 V

1.2 mm

100000 Write/Erase Cycles

8 mm

Not Qualified

5 ms

524288 bit

4.5 V

128

e3

NOT SPECIFIED

NOT SPECIFIED

.0002 Amp

18.4 mm

150 ns

5

YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.