TSSOP EEPROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

CAT25C08YA-1.8

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

1024 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

105 Cel

1KX8

1K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

8192 bit

1.8 V

e3

.00001 Amp

4.4 mm

CAT24WC04GZI-1.8REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

NV25020DTHFT3G

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

150 Cel

256X8

256

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

10 MHz

3 mm

4 ms

SPI

2048 bit

2.5 V

e4

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

CAT25C11GZI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

128X8

128

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

S-PDSO-G8

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e4

40

260

3 mm

CAT25020ZE-GT3D

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

1

5.5 V

1.1 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

IT ALSO OPERATES AT 5MHZ AT 1.8MIN

e3

.000002 Amp

3 mm

CAT24WC02YA-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

105 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C64YI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

2 mA

8192 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

85 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

65536 bit

.000001 Amp

CAT24C02YI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

2048 words

3.3

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

2KX1

2K

-40 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

2048 bit

1.7 V

e3

.000001 Amp

4.4 mm

CAT24WC02YE-TE13REV-F

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT25C33Y14A-TE13

Onsemi

EEPROM

INDUSTRIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

10 mA

4096 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

105 Cel

4KX8

4K

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G14

6 V

1.2 mm

1000000 Write/Erase Cycles

3 MHz

4.4 mm

Not Qualified

10 ms

SPI

32768 bit

2.5 V

e3

5 mm

CAT25256YI-T3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4 mA

32768 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

32KX8

32K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

262144 bit

1.8 V

100 YEAR DATA RETENTION

e3

NOT SPECIFIED

NOT SPECIFIED

.000001 Amp

4.4 mm

CAT25020YE-GT3D

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

125 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

IT ALSO OPERATES AT 5MHZ AT 1.8MIN

e3

.000002 Amp

4.4 mm

CAT24C64YE-GT2

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

8192 words

3.3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

8KX8

8K

-40 Cel

1010DDDR

DUAL

1

HARDWARE

R-PDSO-G8

5.5 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

5 ms

I2C

65536 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

.000005 Amp

4.4 mm

CAT24WC01GYE-1.8TE13REV-F

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT25040YI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

512 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

512X8

512

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

6 V

1.2 mm

1 MHz

3 mm

Not Qualified

5 ms

SPI

4096 bit

1.8 V

e3

4.4 mm

CAT24C00YI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

16 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

16X8

16

-40 Cel

MATTE TIN

1010XXXR

DUAL

R-PDSO-G8

5.5 V

1.1 mm

10000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

5 ms

I2C

128 bit

1.8 V

e3

.000001 Amp

4.4 mm

CAT24WC164UI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

2KX8

2K

-40 Cel

TIN LEAD

1DDDMMMR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

16384 bit

1.8 V

e0

.000001 Amp

4.4 mm

CAT24WC02RI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT25010YI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

128 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

6 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

1024 bit

2.5 V

e3

.000002 Amp

4.4 mm

CAT24WC01RA

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

105 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC01ZI

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

85 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT24WC02ZEREV-C

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24AC128YI-1.8

Onsemi

EEPROM

INDUSTRIAL

14

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

16384 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP14,.25

EEPROMs

100

.65 mm

85 Cel

16KX8

16K

-40 Cel

TIN

1010DDDR

DUAL

HARDWARE

R-PDSO-G14

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

4.4 mm

Not Qualified

5 ms

I2C

131072 bit

1.8 V

e3

.000001 Amp

5 mm

CAT25C03ZA-1.8

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

256 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

105 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

2048 bit

1.8 V

e3

3 mm

CAT25020YI-T3D

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

256 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

85 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

10 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e3

.000002 Amp

4.4 mm

CAT25020YI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

256X8

256

-40 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

6 V

1.2 mm

1 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

1.8 V

e3

4.4 mm

CAT25C03GZE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

125 Cel

256X8

256

-40 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

DUAL

S-PDSO-G8

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e4

40

260

3 mm

CAT24WC04GZ-TE13REV-F

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

70 Cel

512X8

512

0 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC04UI-1.8REV-F

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24WC02ZE-1.8REV-E

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C21Y

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

128 words

3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

70 Cel

128X8

128

0 Cel

MATTE TIN

DUAL

R-PDSO-G8

1

6 V

1.1 mm

.4 MHz

3 mm

Not Qualified

10 ms

I2C

1024 bit

2.5 V

e3

4.4 mm

CAT25080YE-T3

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

1024 words

5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

1KX8

1K

-40 Cel

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

5.5 V

1.2 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

8192 bit

1.8 V

100 YEAR DATA RETENTION

e3

NOT SPECIFIED

NOT SPECIFIED

.000002 Amp

4.4 mm

CAT24WC04GYE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

CAT24C164YI-G

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

1 mA

2048 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

2KX8

2K

-40 Cel

NICKEL PALLADIUM GOLD

1DDDMMMR

DUAL

HARDWARE

R-PDSO-G8

1

5.5 V

1.2 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

I2C

16384 bit

1.8 V

e4

260

.000001 Amp

4.4 mm

CAT24WC04YI-1.8TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

512 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

85 Cel

512X8

512

-40 Cel

1010DDMR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

4096 bit

.000001 Amp

NV25M01YDTUTG

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SERIAL

SYNCHRONOUS

131072 words

2.5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

105 Cel

128KX8

128K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.2 mm

5 MHz

3 mm

5 ms

SPI

1048576 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

CAT24WC02GYE-1.8TE13REV-F

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24WC02GYE-TE13REV-F

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

256 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

125 Cel

256X8

256

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

2048 bit

.000001 Amp

CAT24C01BGY-TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

1024 bit

e0

.000001 Amp

CAT24WC01Y-1.8TE13

Onsemi

EEPROM

COMMERCIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.635 mm

70 Cel

128X8

128

0 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT25C11UI-1.8

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

85 Cel

128X8

128

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

R-PDSO-G8

6 V

1.2 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

1024 bit

1.8 V

e0

.000001 Amp

4.4 mm

CAT24C32BYI-GT3

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

4096 words

1.8

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

4KX8

4K

-40 Cel

NICKEL PALLADIUM GOLD

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

.4 MHz

3 mm

4 ms

I2C

32768 bit

1.55 V

e4

30

260

4.4 mm

CAT24WC164YE-1.8

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

3 mA

2048 words

3

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

EEPROMs

100

.65 mm

125 Cel

2KX8

2K

-40 Cel

MATTE TIN

1DDDMMMR

DUAL

HARDWARE

R-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

.1 MHz

3 mm

Not Qualified

10 ms

I2C

16384 bit

1.8 V

e3

.00001 Amp

4.4 mm

CAT24WC01RA-1.8TE13REV-C

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

SERIAL

3 mA

128 words

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.635 mm

105 Cel

128X8

128

-40 Cel

1010DDDR

DUAL

HARDWARE

R-PDSO-G8

1000000 Write/Erase Cycles

Not Qualified

I2C

1024 bit

.000001 Amp

CAT25020RI-TE13

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

256 words

5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

256X8

256

-40 Cel

TIN LEAD

DUAL

S-PDSO-G8

1

6 V

1.1 mm

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e0

3 mm

CAT24C01ZE

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

2 mA

1024 words

3.3

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

125 Cel

1KX1

1K

-40 Cel

MATTE TIN

1010DDDR

DUAL

HARDWARE

S-PDSO-G8

1

5.5 V

1.1 mm

1000000 Write/Erase Cycles

.4 MHz

3 mm

Not Qualified

5 ms

I2C

1024 bit

1.8 V

e3

.000002 Amp

3 mm

CAT25C11ZE-1.8TE13

Onsemi

EEPROM

AUTOMOTIVE

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

128 words

2.5

2/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

125 Cel

128X8

128

-40 Cel

MATTE TIN

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

1 MHz

3 mm

Not Qualified

10 ms

SPI

1024 bit

1.8 V

e3

.00001 Amp

3 mm

CAT25C03RA

Onsemi

EEPROM

INDUSTRIAL

8

TSSOP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

256 words

5

3/5

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.19

EEPROMs

100

.65 mm

105 Cel

256X8

256

-40 Cel

TIN LEAD

DUAL

HARDWARE/SOFTWARE

S-PDSO-G8

6 V

1.1 mm

1000000 Write/Erase Cycles

5 MHz

3 mm

Not Qualified

5 ms

SPI

2048 bit

2.5 V

e0

3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.