AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT93C56WE-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			128X16	128	-40 Cel				DUAL		SOFTWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	Also operates at 1.8V and 2.5V					.00001 Amp
CAT93C86ZD4E-GT2C	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		3 mA	1024 words			3/5	16	SMALL OUTLINE	SOLCC8,.12,25	8	EEPROMs	100	.635 mm	125 Cel			1KX16	1K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	16384 bit							.00001 Amp
CAT93C57JE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			128X16	128	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	2048 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93HC46SE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			64X16	64	-40 Cel		TIN LEAD		DUAL		SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified		MICROWIRE	1024 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT93C66WE-GT2E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	125 Cel			256X16	256	-40 Cel		MATTE TIN		DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified		MICROWIRE	4096 bit	4.5 V	IT ALSO OPERATES AT 0.5MHZ AT 2.5MIN		e3			.00001 Amp	4.9 mm
CAT93C86JE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			1KX16	1K	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8		6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93C86JE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	5			16	SMALL OUTLINE		8		100	1.27 mm	125 Cel			1KX16	1K	-40 Cel		TIN LEAD		DUAL			R-PDSO-G8		6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified		MICROWIRE	16384 bit	2.5 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e0				4.9 mm
CAT93C56LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	16	IN-LINE	DIP8,.3	8	EEPROMs	100	2.54 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN		DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.25 MHz	7.62 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V	1000000 PROGRAM/ERASE CYCLES; 100 YEAR DATA RETENTION		e3			.00001 Amp	9.59 mm
CAT93C57YE-1.8T3REVE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	125 Cel			128X16	128	-40 Cel		MATTE TIN		DUAL			R-PDSO-G8		5.5 V	1.2 mm		.25 MHz	3 mm	Not Qualified		MICROWIRE	2048 bit	1.8 V			e3	40	260		4.4 mm
CAT25256CSA1E-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		32768 words	5			8	GRID ARRAY						125 Cel			32KX8	32K	-40 Cel		MATTE TIN		BOTTOM			R-PBGA-B8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	262144 bit	2.5 V			e3	40	260
CAT24WC04ZE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel			512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25040GZE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE						125 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V			e4
CAT24WC04GWE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC08LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	1024 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel			1KX8	1K	-40 Cel			1010DMMR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25256LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel			32KX8	32K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	262144 bit	2.5 V	ALSO AVAILABLE 1.8-5.5V WITH 5MHZ FOR -40 TO 85 DEG CEL					.000003 Amp	9.27 mm
CAT25020VP2EGT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4		260	.000002 Amp	3 mm
CAT25C128Y14E-1.8	Onsemi	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	100	.635 mm	125 Cel			16KX8	16K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G14				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT24WC02WE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC01UE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25C09SE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			1KX8	1K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V			e0				4.9 mm
CAT24WC66LE-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	IN-LINE				100	2.54 mm	125 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		10 ms	I2C	65536 bit	1.8 V	100 YEAR DATA RETENTION		e4				9.27 mm
CAT24WC01GZE-TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25010VA-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		5.5 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e4				4.9 mm
CAT24FC256WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		6 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3			.00001 Amp	4.9 mm
CAT24C08ZE-G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		2/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel			8KX1	8K	-40 Cel		NICKEL PALLADIUM GOLD	1010DMMR	DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e4		260	.000002 Amp	3 mm
CAT25020LE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		262144 words	5			8	IN-LINE					2.54 mm	125 Cel			256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	2097152 bit	1.8 V			e4				9.27 mm
CAT25C17SE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			2KX8	2K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V			e0				4.9 mm
CAT25040VE-GTD	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	3.6			8	SMALL OUTLINE		8		100	1.27 mm	125 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		5.5 V	1.75 mm		10 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION		e4				4.9 mm
CAT24WC02PEREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel			256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25C128Y20E-1.8	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		EEPROMs	100	.635 mm	125 Cel			16KX8	16K	-40 Cel				DUAL		HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit							.00001 Amp
CAT25C65GLE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	5			8	IN-LINE					2.54 mm	125 Cel			8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V			e4				9.59 mm
CAT25C32Y14E	Onsemi	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	100	.65 mm	125 Cel			4KX8	4K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G14		6 V	1.2 mm	1000000 Write/Erase Cycles	3 MHz	4.4 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V			e3			.00001 Amp	5 mm
CAT24WC04GYE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel			512X8	512	-40 Cel			1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24C512YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	65536 words	3.3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	NO		64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e4	30	260	.000005 Amp	4.4 mm
CAT24C08VP2E	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3		2/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel			8KX1	8K	-40 Cel		MATTE TIN	1010DMMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e3			.000002 Amp	3 mm
CAT25C17SE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			2KX8	2K	-40 Cel		TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e0				4.9 mm
CAT24C01BRE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel			128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL			R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT24WC16JE-TE13REV-D	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			2KX8	2K	-40 Cel			1010MMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24C04TDIT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32 words	5			16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	125 Cel			32X16	32	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.8 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	512 bit	1.8 V			e4				3 mm
CAV25010VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	1024 bit	2.5 V			e4	30	260		4.9 mm
CAT24WC02GYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel			256X8	256	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24FC64GYE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	8192 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel			8KX8	8K	-40 Cel			1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit							.00001 Amp
NV25010DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	125 Cel	NO	3-STATE	128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	20 MHz	3 mm		4 ms	SPI	1024 bit	4.5 V	IT ALSO OPERATES AT 10 MHZ FREQUENCY AT 2.5 TO 5.5 V SUPPLY VOLTAGE		e4	NOT SPECIFIED	260	.000003 Amp	4.4 mm
CAT28LV256NE-30T	Onsemi	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	125 Cel			32KX8	32K	-40 Cel	NO			QUAD			R-PQCC-J32	1	3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64				.00015 Amp	13.97 mm	300 ns	3	YES
CAT25040ZE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE						125 Cel			512X8	512	-40 Cel		MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V			e3
CAT25C09LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel			1KX8	1K	-40 Cel		MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V			e3				9.59 mm
CAT28LV256GE-30	Onsemi	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	125 Cel			32KX8	32K	-40 Cel	NO	Tin (Sn)		QUAD			R-PQCC-J32		3.6 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3			.00015 Amp	13.97 mm	300 ns	3	YES
CAT24C208WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			1KX8	1K	-40 Cel		MATTE TIN		DUAL	2		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	3 V			e3			.00005 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.