AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
CAT24WC02LEREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		3 mA	256 words			3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC66WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	65536 bit	4.5 V	Also operates at 1.8V					.000001 Amp
CAT24C01BGWE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel				DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit							.00001 Amp
CAT25020GYE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE						125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4
CAT24C01YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e4	30	260	.000002 Amp	4.4 mm
CAT25C05YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	512 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	512X8	512	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V			e3				4.4 mm
CAV25160VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm		10 MHz	3.9 mm		5 ms	SPI	16384 bit	2.5 V	100 YEAR DATA RETENTION		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAT24C16C5AI-T3	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		128 words	5			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	128X16	128	-40 Cel		NICKEL PALLADIUM GOLD		BOTTOM		R-PBGA-B4		5.5 V	.35 mm		.4 MHz	.832 mm		5 ms	I2C	2048 bit	1.8 V			e4				.856 mm
CAT24WC02ZE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC02GWE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25010VP2ET	Onsemi	EEPROM	AUTOMOTIVE	8	VSOF	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS		128 words	3.6			8	SMALL OUTLINE, VERY THIN PROFILE		8		100	.5 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		R-PDSO-F8		5.5 V	.8 mm		10 MHz	1.9 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION		e3				2 mm
CAT25010ZA-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V			e3				3 mm
CAT24C02TDE	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words	3.3		2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel	2KX1	2K	-40 Cel		MATTE TIN	1010000R	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e3			.000002 Amp	2.9 mm
CAT24C02TDE-GT3	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3		2/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37		EEPROMs	100	.95 mm	125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010000R	DUAL	HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4	30	260	.000005 Amp	2.9 mm
CAT25C11YE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V			e3			.00001 Amp	4.4 mm
CAT24WC02YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAV24C16C5ATR	Onsemi	EEPROM	AUTOMOTIVE	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		16384 words	3.6			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.3 mm	125 Cel	16KX1	16K	-40 Cel				BOTTOM		R-PBGA-B5		5.5 V	.39 mm		.4 MHz	.84 mm		5 ms	I2C	16384 bit	2.5 V	ALSO AVAILABLE 2.5-5.5V WITH 0.1MHZ						.86 mm
CAT24C01LI-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	128X16	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4		260	.000001 Amp	9.27 mm
CAT24WC01GWE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT25010GVE-TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V			e4
CAT24FC256JE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	32KX8	32K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e0			.00001 Amp	4.9 mm
CAT24C21WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010XXXR	DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e4	NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.9 mm
CAT25020GZE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE						125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4
CAT24WC04RE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT24WC02REREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24AC128Y14E-TE13	Onsemi	EEPROM	AUTOMOTIVE	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	16384 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	100	.635 mm	125 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.00001 Amp
CAT28LV256HE25T	Onsemi	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3.3			8	SMALL OUTLINE						125 Cel	32KX8	32K	-40 Cel				DUAL		R-PDSO-G28		3.6 V					Not Qualified	10 ms		262144 bit	3 V								250 ns	3
CAT24C01BJE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT24WC02UEREV-E	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT24WC08JE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000001 Amp
CAT25010LE-GD	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN		e4		260	.000002 Amp	9.27 mm
CAT25C17VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V			e3				4.9 mm
CAT24FC01JE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V			e0			.00001 Amp	4.9 mm
CAT28LV256HE30	Onsemi	EEPROM	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	125 Cel	32KX8	32K	-40 Cel	NO	TIN		DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64	e3		260	.00015 Amp		300 ns		YES
CAT24C01BGYE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel		Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified			1024 bit				e0			.00001 Amp
CAT25C11VE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V			e3			.00001 Amp	4.9 mm
CAT25C03GYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V			e4				4.4 mm
CAT24WC164RE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel	2KX8	2K	-40 Cel		TIN LEAD	1DDDMMMR	DUAL	HARDWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp	3 mm
CAT24WC04GZE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit							.000001 Amp
CAT25020GYE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5			8	SMALL OUTLINE						125 Cel	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	2048 bit	1.8 V			e4
CAT24FC17UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	2KX8	2K	-40 Cel		TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V			e0			.00001 Amp	4.4 mm
CAT24WC02GZE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	256 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit							.000001 Amp
CAT25010VE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel		MATTE TIN		DUAL		R-PDSO-G8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V			e3
CAT25080VP2E-G	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	NO LEAD	SERIAL		2 mA	1024 words			2/5	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel	1KX8	1K	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	1			1000000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e3			.000002 Amp
CAT28LV256H13E-30T	Onsemi	EEPROM	AUTOMOTIVE	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	125 Cel	32KX8	32K	-40 Cel	NO	Tin (Sn)		DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	3 V		64	e3			.00015 Amp	11.8 mm	300 ns	3	YES
CAT24WC16GWEREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000001 Amp
CAT24WC01JE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp
CAT24WC01JE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	128 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit							.000001 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.