AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CAT24WC16GWE-TE13REV-D	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000001 Amp
CA-T25128LE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5		8	IN-LINE				100	2.54 mm	125 Cel	16KX8	16K	-40 Cel	MATTE TIN		DUAL			R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V	100 YEAR DATA RETENTION	e3				9.27 mm
CAT25C128Y20E-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25		EEPROMs	100	.635 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit						.00001 Amp
CAT25010RE-TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	1024 bit	2.5 V		e0
CAT25C17GVE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE					1.27 mm	125 Cel	2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8		6 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e4	40	260		4.9 mm
CAT24C32ZD2E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL		2 mA	4096 words		2/5	8	SMALL OUTLINE	SOLCC8,.2,25		EEPROMs	100	.635 mm	125 Cel	4KX8	4K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit						.000002 Amp
CAT24WC02UE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24FC32KE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5	3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e0			.00001 Amp	5.3 mm
CAT25320YE-G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	4096 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit			e4		260	.000002 Amp
CAT25C128VE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit						.00001 Amp
CAT24WC01WE-TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24WC66WE-GT3C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e3			.000001 Amp	4.9 mm
CAT24C64WE-T2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAT25020ZE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	2.5 V		e4	30	260	.000002 Amp	3 mm
CAV24C08C4ATR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V		e1	30	260		.86 mm
CAT25040VP2EGT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	512 words	5	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.8 mm	1000000 Write/Erase Cycles	10 MHz	2 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e4		260	.000002 Amp	3 mm
CAT25040RE-REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE						125 Cel	512X8	512	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			5 MHz		Not Qualified	5 ms	SPI	4096 bit	2.5 V		e0
CAT24WC02LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	256 words		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25C65VE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e3			.00001 Amp	4.9 mm
CAT25010ZE-GT	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	3.6		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		100	.65 mm	125 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8		5.5 V	1.1 mm		10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V	100 YEAR DATA RETENTION	e4				3 mm
CAT24FC02ZE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3			.00001 Amp	3 mm
CAT24WC02GYE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24C02YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	125 Cel	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4	30	260	.000005 Amp	4.4 mm
CAT25C11GVE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE					1.27 mm	125 Cel	128X8	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.75 mm		5 MHz	3.9 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V		e4				4.9 mm
CAV24C08C4CTR	Onsemi	EEPROM	AUTOMOTIVE	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		8192 words	3.6		1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	125 Cel	8KX1	8K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM			R-PBGA-B4	1	5.5 V	.38 mm		.4 MHz	.84 mm		5 ms	I2C	8192 bit	2.5 V		e1	30	260		.86 mm
CAT24C256ZD2E-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				100	.65 mm	125 Cel	32KX8	32K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-N8		5.5 V	.85 mm		1 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	100 YEAR DATA RETENTION	e4				4.9 mm
CAT24C08HU4E-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	100	.5 mm	125 Cel	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e4	30	260	.000005 Amp	3 mm
CAT24WC02WE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
NV25256DTVLT3G	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel	32KX8	32K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.2 mm		20 MHz	3 mm		4 ms	SPI	262144 bit	4.5 V	IT ALSO OPERATES AT FREQUENCY 10 MHZ AT 2.5 TO 4.5 V SUPPLY VOLTAGE		NOT SPECIFIED	NOT SPECIFIED		4.4 mm
CAT25010LE-D	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words	5	2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8	1	5.5 V	5.33 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN	e3			.000002 Amp	9.27 mm
CAT24WC01YE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	128X8	128	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT25C128XE-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN				.00001 Amp
CAT25C128VE-G	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN				.00001 Amp
CAT25M02VE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		262144 words			8	SMALL OUTLINE					1.27 mm	125 Cel	256KX8	256K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		10 MHz	3.9 mm		6 ms	I2C	2097152 bit	2.5 V						4.9 mm
CAT24WC01JE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24WC66XE-1.8-GT2	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	2/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles		5.23 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V					.000001 Amp	5.255 mm
CAT24C01WIT3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5		16	IN-LINE					2.54 mm	125 Cel	128X16	128	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4				9.27 mm
CAT24C164WI-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1 mA	2048 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1DDDMMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000001 Amp
CAT24WC02GWE-1.8TE13REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT24WC02JE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25C11RE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	2.5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8		6 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	1024 bit	1.8 V		e0			.00001 Amp	3 mm
CAT24WC02GLE-1.8REV-E	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		3 mA	256 words		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25320LE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5		8	IN-LINE				100	2.54 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL			R-PDIP-T8		5.5 V	5.33 mm		5 MHz	7.62 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V	100 YEAR DATA RETENTION	e3				9.27 mm
CAT25010RE-1.8REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE						125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V			1 MHz		Not Qualified	5 ms	SPI	1024 bit	1.8 V		e0
CAT24FC17GYE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	125 Cel	2KX8	2K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.00001 Amp
CAT24C64WE-T3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
CAT25C33VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V		e3				4.9 mm
CAT25C32LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words	5		8	IN-LINE						125 Cel	4KX8	4K	-40 Cel			DUAL			R-PDIP-T8		6 V			3 MHz			10 ms	SPI	32768 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.