AUTOMOTIVE EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
CAV24M01WE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		131072 words	5		8	SMALL OUTLINE				1.27 mm	125 Cel	128KX8	128K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm		5 ms	I2C	1048576 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED		4.9 mm
CAT24WC02GWE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25C17YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	2048 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e3				4.4 mm
CAV24C128YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	16KX8	16K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	SPI	131072 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
CAT24C21PE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	3		8	IN-LINE				2.54 mm	125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL			R-PDIP-T8		5.5 V	4.57 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e0				9.59 mm
CAT24WC164LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	2KX8	2K	-40 Cel	MATTE TIN	1DDDMMMR	DUAL		HARDWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V		e3			.00001 Amp	9.36 mm
CAT25C128LE-1.8-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		10 mA	16384 words		2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit						.00001 Amp
CAT25C33VE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	4KX8	4K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	2.5 V		e3				4.9 mm
CAT24FC65UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e0			.00001 Amp	4.4 mm
CAT24WC02GYE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25C17GYE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8		6 V	1.2 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	2.5 V		e4	40	260		4.4 mm
CAT25010ZE-GT3D	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	2.5 V	IT ALSO OPERATES AT 5MHZ AT 1.8MIN	e3			.000002 Amp	3 mm
CAT24FC01YE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	3	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	128X8	128	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V		e3			.00001 Amp	4.4 mm
CAT25C03VE-1.8TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V		e3				4.9 mm
CAT25040ZA-T3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V		e3				3 mm
CAT24C08TDE	Onsemi	EEPROM	AUTOMOTIVE	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	3.3	2/5	1	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	100	.95 mm	125 Cel	8KX1	8K	-40 Cel	MATTE TIN	10100MMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	1.6 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V		e3			.000002 Amp	2.9 mm
CAT24C32YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	4KX8	4K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.4 mm
CAT24WC66WE-GT2C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e3			.000001 Amp	4.9 mm
CAT24WC66XE-T2C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V		e3			.000001 Amp	5.255 mm
CAT25C05GYE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8		6 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V		e4				4.4 mm
CAT25C17GLE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	2.5		8	IN-LINE				2.54 mm	125 Cel	2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		6 V	4.57 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V		e4				9.59 mm
CAT24WC66LE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	8KX8	8K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V		1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V					.00001 Amp	9.27 mm
CAT24WC16GWE-1.8TE13REV-D	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000001 Amp
CAT25C09LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	1024 words	5	3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	1KX8	1K	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8		6 V	4.57 mm	1000000 Write/Erase Cycles	5 MHz	7.62 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e3				9.59 mm
CAT24WC01JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	128 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	128X8	128	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	1024 bit						.000001 Amp
CAT24WC04WEREV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	512X8	512	-40 Cel		1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT25040VE-1.8TE13REV-C	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE					125 Cel	512X8	512	-40 Cel	MATTE TIN		DUAL			R-PDSO-G8		5.5 V			1 MHz		Not Qualified	5 ms	SPI	4096 bit	1.8 V		e3
CAT24C02LE-G	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e4		260	.000002 Amp	9.27 mm
CAT24C208UE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5	3.3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD		DUAL	2		R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	3 V		e0			.00005 Amp	4.4 mm
CAT25C128Y20E-G	Onsemi	EEPROM	AUTOMOTIVE	20	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5	3/5	8	SMALL OUTLINE	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G20		5.5 V		100000 Write/Erase Cycles	5 MHz		Not Qualified	5 ms	SPI	131072 bit	4.5 V	IT ALSO OPERATES AT 3MHZ AT 2.5MIN				.00001 Amp
CAT24FC65RD2E	Onsemi	EEPROM	AUTOMOTIVE	8	SON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOLCC8,.2,25	EEPROMs	100	.635 mm	125 Cel	8KX8	8K	-40 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-XDSO-N8		5.5 V		1000000 Write/Erase Cycles	1 MHz		Not Qualified	5 ms	I2C	65536 bit	2.5 V		e0			.00001 Amp
CAT24FC66YE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-XDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3			.00001 Amp	4.4 mm
CAT24FC66WE	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3			.00001 Amp	4.9 mm
CAV24C512YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	65536 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	64KX8	64K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V		e4	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
CAT24WC02GWE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	256 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	256X8	256	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.000001 Amp
CAT25040YE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	5	2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	512X8	512	-40 Cel	MATTE TIN		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	6 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V		e3			.000002 Amp	4.4 mm
CAT24WC16JE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	2048 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	2KX8	2K	-40 Cel		1010MMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit						.000001 Amp
CAT24FC64XE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3	3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	100	1.27 mm	125 Cel	8KX8	8K	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3			.00001 Amp	5.3 mm
CAT25C128Y20E-1.8-GT3	Onsemi	EEPROM	AUTOMOTIVE	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		10 mA	16384 words		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	125 Cel	16KX8	16K	-40 Cel			DUAL		HARDWARE/SOFTWARE	R-PDSO-G20				100000 Write/Erase Cycles			Not Qualified		SPI	131072 bit						.00001 Amp
CAT24WC04JE-1.8TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	512X8	512	-40 Cel		1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C02LE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	256X8	256	-40 Cel	MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V		e3			.000002 Amp	9.27 mm
CAT25C09UE	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	1024 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	1KX8	1K	-40 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		6 V	1.2 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	8192 bit	2.5 V		e0				4.4 mm
CAT24WC08GWE-1.8REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	1024 words		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	1KX8	1K	-40 Cel		1010DMMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000001 Amp
CAT24WC04JE-TE13REV-F	Onsemi	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	125 Cel	512X8	512	-40 Cel		1010DDMR	DUAL		HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit						.000001 Amp
CAT24C128YE-GT3	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	125 Cel	16KX8	16K	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V	100 YEAR DATA RETENTION	e4	30	260	.000002 Amp	4.4 mm
CAT24FC256GLE	Onsemi	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		4 mA	32768 words		3/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	125 Cel	32KX8	32K	-40 Cel		1010DDDR	DUAL		HARDWARE	R-PDIP-T8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit						.00001 Amp
CAT24C21RE-TE13	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V		e0				3 mm
CAT25010RE-1.8	Onsemi	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	125 Cel	128X8	128	-40 Cel	TIN LEAD		DUAL			S-PDSO-G8	1	6 V	1.1 mm		1 MHz	3 mm	Not Qualified	5 ms	SPI	1024 bit	1.8 V		e0				3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.