OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
M95040-RDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		512X8	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V		e4			.000002 Amp	4.4 mm
M95256-SBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	32768 words	2.5	2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.33 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	262144 bit	1.8 V		e0			.000001 Amp	9.27 mm
M95640-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5	2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.9 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e0			.000001 Amp	9.55 mm
M24128-BFMN5TG/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24C32-FCU5P/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C32-DFCU5TP/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-WMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	1 mA	4096 words		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	32768 bit	2.5 V		e4			.000002 Amp	4.9 mm
M24C04-FMC5TP	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	512 words	2.5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		512X8	512	-20 Cel		1010DDMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M93C46-MN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words	5	5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel		64X16	64	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	CONFIGURABLE AS 64 X 16	e4			.00005 Amp	4.9 mm
M24C32-WMH5TP	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.4 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N5		5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	2.5 V						1.7 mm
M24C08-FMC5P	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	1.8	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		1KX8	1K	-20 Cel		1010DMMR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V					.000001 Amp	3 mm
M93C76-WMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		512X16	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	8192 bit	2.5 V	CONFIGURABLE AS 512 X 16	e4				4.9 mm
M95128-SMW5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	2.5	2/3.3	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	1 MHz	5.25 mm	Not Qualified	10 ms	SPI	131072 bit	1.8 V		e3			.000001 Amp	5.3 mm
M24128-BFMN5TP/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24C32-XCU5G/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M95020-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	3.3		8	IN-LINE					2.54 mm	85 Cel		256X8	256	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.9 mm			7.62 mm	Not Qualified		SPI	2048 bit	2.5 V						9.55 mm
M24C64-FMN6/B	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e0				4.9 mm
M24C08-FMC5TP/S	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	SPI	8192 bit	1.7 V						3 mm
M95128-WDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000002 Amp	5 mm
M24C32-RDW5TG	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		5 ms	I2C	32768 bit	1.8 V						4.4 mm
M24C04-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	3.6 V	1.1 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V		e4				4.4 mm
M24C32-WMB5GB	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.7		8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C32-WMN5TG/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7		8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e4				4.9 mm
M24C32-WCS5P/P	STMicroelectronics	EEPROM	OTHER	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.7		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C32-FCU5G/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24128-BFBN5P/P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	1.8		8	IN-LINE					2.54 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		9.27 mm
M24C64-WMB5P/P	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		8192 words	2.7		8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C32-RCU5G/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M95640-WDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	3.3		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm			4.4 mm	Not Qualified		SPI	65536 bit	2.5 V						5 mm
M24C32-XBN5G	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	IN-LINE					2.54 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm		10 ms	I2C	32768 bit	1.6 V						9.27 mm
M93C76-BN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	5	5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		512X16	512	-20 Cel			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	8192 bit	4.5 V	CONFIGURABLE AS 512 X 16	e0	NOT SPECIFIED	NOT SPECIFIED	.00005 Amp	9.55 mm
M95640-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified		SPI	65536 bit	4.5 V						4.9 mm
M24C32-DFCU5TG/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24C04-FDW5G	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	5	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		512X8	512	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	30	260	.000001 Amp	4.4 mm
M24C32-FMH5P	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.4 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N5		5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.7 V						1.7 mm
M24C08-FMC5G	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words	1.8		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	I2C	8192 bit	1.7 V						3 mm
M95640-RDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V		e0			.000001 Amp	5 mm
M24C64-FDW5TP/B	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e4			.000001 Amp	4.4 mm
M24C08-FMB5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	1	EEPROMs	40	.5 mm	85 Cel		1KX8	1K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	3 mm
M24C32-FDW5G/B	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e4			.000001 Amp	4.4 mm
M95640-SDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	65536 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4			.000001 Amp	4.4 mm
M24C32-FMN6P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e0			.000001 Amp	4.9 mm
M24C04-WMC5P	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm		5 ms	I2C	4096 bit	2.5 V						3 mm
M24C32-FMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words		1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		4KX8	4K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V		e3			.000001 Amp	3 mm
M24C32-DFCU5G/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M95020-MN5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE					1.27 mm	85 Cel		256X8	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified		SPI	2048 bit	4.5 V		e4				4.9 mm
M24C04-RDW5G	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	4096 bit	1.8 V						4.4 mm
M24C32-FCU5G/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.