OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
KS24A010C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1024 words	2.5			1	IN-LINE					2.54 mm	70 Cel	1KX1	1K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V						9.2 mm
KS24A2561CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	262144 words	2.5		2/5	1	SMALL OUTLINE	TSSOP8(UNSPEC)		EEPROMs	50	.65 mm	70 Cel	256KX1	256K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	500000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C		262144 bit	1.8 V		e0			.000001 Amp	4.4 mm
S524C80D41-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel	512X8	512	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.95 mm		.1 MHz	3.95 mm	Not Qualified	10 ms	I2C		4096 bit	2.5 V		e0				4.92 mm
S524A60X81-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1024 words	2.5			8	IN-LINE					2.54 mm	70 Cel	1KX8	1K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		8192 bit	1.8 V						9.2 mm
K8S1215EZC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A40X10-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	128X8	128	-25 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V					.000001 Amp	9.2 mm
K8S1215EBC-DE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit			e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524C20D21-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	70 Cel	256X8	256	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		2048 bit						.000005 Amp
K8P2716UZC-QE4ET	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-25 Cel	128	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1						Not Qualified				134217728 bit		8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8S1315EZC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit			e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A40X21-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel	256X8	256	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.8 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V					.000001 Amp	4.92 mm
KFG2816Q1M-DEB	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	25 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories		.8 mm	85 Cel	8MX16	8M	-30 Cel	256	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B67	1						Not Qualified				134217728 bit		512	e3		NAND TYPE	.00005 Amp			14.5 ns	2.7	NO
KS24A020CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel	2KX1	2K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V						4.92 mm
KS24C01CSTF	Samsung	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel	128X8	128	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit			e0			.000005 Amp				2.7
KS24A011CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	2.5			1	SMALL OUTLINE					.65 mm	70 Cel	1KX1	1K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V						4.4 mm
KS24C020C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		3/5	1	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel	2KX1	2K	-25 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C		2048 bit	2.2 V		e0			.000005 Amp	9.2 mm
KS24A021CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel	2KX1	2K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V						4.92 mm
S524AB0XB1-RC	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel	8KX8	8K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		65536 bit	1.8 V					.000001 Amp	4.4 mm
KS24A1281CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			131072 words	2.5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel	128KX1	128K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	5 ms	I2C		131072 bit	1.8 V						4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.