OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M24C02-FMN6TP	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words			1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		256X8	256	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
DS1961S-F5	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words			3/5	1	DISK BUTTON	BUTTON,.68IN		SRAMs			85 Cel		1KX1	1K	-20 Cel	TIN LEAD		END			O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e0	20	240
DS1961S-F5+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON						85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e3
M24C02-FMC6TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	256 words			1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel		256X8	256	-20 Cel		1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V					.000001 Amp	3 mm
M24C02-FDW6TP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words			1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		256X8	256	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4		260	.000001 Amp	4.4 mm
M24C32-FMN6TP	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		1.8	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e0			.000001 Amp	4.9 mm
24VL024H/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm		2.5
24VL014H/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	1.8/3,3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm		2.5
24VL014HT/MNY	Microchip Technology	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	1.8/3,3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e4	40	260	.000001 Amp	3 mm		2.5
24VL024HT/MNY	Microchip Technology	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e4	40	260	.000001 Amp	3 mm		2.5
24VL024/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm		2.5
M34E04-FMC9TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	95 Cel		512X8	512	0 Cel			DUAL			R-PDSO-N8	1	3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V						3 mm		3
24VL014/SN	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e3	30	260	.000001 Amp	4.9 mm		2.5
24VL014T/MNY	Microchip Technology	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words		2.5	1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.8 V	1.5V TO 1.8V @ 0.1MHz	e4	40	260	.000001 Amp	3 mm		2.5
AT34C04-SS5M-T	Microchip Technology	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words			1.8/3.3	8	SMALL OUTLINE	SOP8,.23		EEPROMs	100	1.27 mm	125 Cel	OPEN-DRAIN	512X8	512	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	SOFTWARE	R-PDSO-G8	3	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V		e4	40	260	.000004 Amp	4.9 mm
DS25LV02R+U	Analog Devices	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	2.5	2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37		Other Memory ICs		.95 mm	85 Cel		128X8	128	-30 Cel	Matte Tin (Sn) - annealed		DUAL			R-PDSO-G5	1	5.5 V					Not Qualified		1-WIRE	1024 bit	2.2 V		e3					15000 ns
DS1961S-F3+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON						85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS28E02Q+T&R	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		EEPROMs	40	.95 mm	85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		DUAL			S-PDSO-N6	1	3.65 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS28E02P+	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		DUAL			R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260		3.94 mm
DS28E02Q+U	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		1024 words		1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.95 mm	85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		DUAL			S-PDSO-N6	1	3.65 V	.8 mm			3 mm			1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS28E02P+T&R	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17		EEPROMs	40	1.27 mm	85 Cel		1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed		DUAL			R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	1.75 V		e3	30	260		3.94 mm
CAT93C86BVI-GT3L	Onsemi	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words		1.8		16	SMALL OUTLINE		8			1.27 mm	85 Cel		1KX16	1K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		2 MHz	3.9 mm			MICROWIRE	16384 bit	1.65 V		e4	30	260		4.9 mm
CAT93C76BVI-GT3L	Onsemi	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		512X16	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		4 MHz	3.9 mm			MICROWIRE	8192 bit	1.65 V		e4	30	260		4.9 mm
CAT93C46BYI-GT3L	Onsemi	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		64X16	64	-20 Cel			DUAL			R-PDSO-G8		5.5 V	1.2 mm		2 MHz	3 mm			MICROWIRE	1024 bit	1.65 V	ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL					4.4 mm
CAT93C86BYI-GT3L	Onsemi	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words		1.8		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		1KX16	1K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		2 MHz	3 mm			MICROWIRE	16384 bit	1.65 V		e4	30	260		4.4 mm
CAT93C86YI-GT3L	Onsemi	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		1KX16	1K	-20 Cel			DUAL			R-PDSO-G8		5.5 V	1.2 mm			3 mm			MICROWIRE	16384 bit	1.65 V						4.4 mm
CAT93C86VI-GT3L	Onsemi	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words		5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		1KX16	1K	-20 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.5 MHz	3.9 mm			MICROWIRE	16384 bit	1.8 V						4.9 mm
CAT93C46BVI-GT3L	Onsemi	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		64 words		5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		64X16	64	-20 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm			MICROWIRE	1024 bit	1.65 V	ALSO AVAILABLE 1.8-5.5V WITH 2MHZ FOR -40 TO 85 DEG CEL					4.9 mm
CAT93C76BYI-GT3L	Onsemi	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words		5		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.65 mm	85 Cel		512X16	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	5.5 V	1.2 mm		4 MHz	3 mm			MICROWIRE	8192 bit	1.65 V		e4	30	260		4.4 mm
LE24L043CB	Onsemi	EEPROM	OTHER	5	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	3 mA	512 words		2.5	1.8/3.3	8	GRID ARRAY	BGA5,3X3,17/10		EEPROMs	20	.254 mm	85 Cel		512X8	512	-20 Cel		101000MR	BOTTOM		HARDWARE	R-PBGA-B5		3.6 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	1.7 V					.000002 Amp
M34E04-FMC8TP	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	95 Cel		512X8	512	0 Cel			DUAL			R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M34E04-FMC9G	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	95 Cel		512X8	512	0 Cel			DUAL			R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V						3 mm		3
M34D64-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	8192 words		2.5	2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-20 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8		3.6 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V		e0			.000001 Amp	9.55 mm
M34D32-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	4096 words		2.5	2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.8 V		e4			.000001 Amp	4.9 mm
M93S66-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		2.5	2/3.3	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V		e4			.000005 Amp	4.9 mm
ST25C04B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-20 Cel	TIN LEAD	1010DDMR	DUAL		SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE	e0			.000005 Amp	9.55 mm
ST24C02RM5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.6	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e4			.00001 Amp	4.9 mm
M93S46-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		1.5 mA	64 words			3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64X16	64	-20 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0			.00001 Amp
M93S66-WDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1.5 mA	256 words			3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	85 Cel		256X16	256	-20 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit			e0			.00001 Amp
M93S46-WDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1.5 mA	64 words			3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	85 Cel		64X16	64	-20 Cel	TIN LEAD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e0			.00001 Amp
ST24C02RM5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.6	2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e4			.00001 Amp	4.9 mm
M93S66-WMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1.5 mA	256 words			3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit			e4			.00001 Amp
SRI2K-SBN18/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3		32	UNCASED CHIP						85 Cel		64X32	64	-20 Cel			UPPER			X-XUUC-N		3.5 V						5 ms		2048 bit	2.5 V								3
LRI512-W4/22A1S	STMicroelectronics	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16 words				32	UNCASED CHIP						85 Cel		16X32	16	-20 Cel			UPPER			R-XUUC-NX		3 V			13.567 MHz		Not Qualified	5 ms		512 bit	1.5 V								3
LRI2K-SBN18/1XX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		64 words				32	UNCASED CHIP						85 Cel		64X32	64	-20 Cel			UPPER			X-XUUC-N		3 V						5.8 ms		2048 bit	1.5 V								3
M93S46-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		1.5 mA	64 words		5	5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit			e4			.00005 Amp
SRT512-W4/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		3		32	UNCASED CHIP						85 Cel		16X32	16	-20 Cel			UPPER			X-XUUC-N		3.5 V								512 bit	2.5 V								3
M34D32BN5	STMicroelectronics	EEPROM CARD	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	SERIAL		2 mA	4096 words		5	5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL		HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit			e0			.00001 Amp			2.7

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.