OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
ST25C08B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	TIN LEAD	1010DMMR	DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V		e0			.000005 Amp	9.55 mm
M93S56-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		128X16	128	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e0			.000005 Amp	4.4 mm
M34D64MN5T	STMicroelectronics	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	8192 words		5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	65536 bit			e4			.00001 Amp			2.7
LRI512SBN18/22A1T	STMicroelectronics	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16 words				32	UNCASED CHIP					85 Cel		16X32	16	-20 Cel			UPPER		R-XUUC-NX		3 V			13.567 MHz		Not Qualified	5 ms		512 bit	1.5 V								3
M34S32-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words				8	IN-LINE			40	2.54 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS					9.55 mm
ST24C02RB5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		3.6	2/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e0			.00001 Amp	9.55 mm
ST24C01RB5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5	2/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	TIN LEAD	1010DDDR	DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e0			.00001 Amp	9.55 mm
ST25C08M5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V		e4			.000005 Amp	4.9 mm
M93S56-RDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		128X16	128	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V		e0			.000005 Amp	4.4 mm
ST25C08M5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V		e4			.000005 Amp	4.9 mm
M93S56-WDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	128 words			3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	85 Cel		128X16	128	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e0			.00001 Amp
ST24C04RM5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words				8	SMALL OUTLINE			40	1.27 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE					4.9 mm
M93S66-WDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	256 words			3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	85 Cel		256X16	256	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit			e0			.00001 Amp
M34E04B-FMC9TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8	1	3.6 V	.6 mm		.1 MHz	2 mm		5 ms		4096 bit	1.7 V				260		3 mm		3
M93S66-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words		2.5	2/3.3	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.9 mm	1000000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V		e0			.000005 Amp	9.55 mm
M93S66-DW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	256 words		5	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	85 Cel		256X16	256	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit			e0			.00005 Amp
SRI4K-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		128 words		3		32	UNCASED CHIP					85 Cel		128X32	128	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		4096 bit	2.5 V								3
LRI512-SBN18/22A1S	STMicroelectronics	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16 words				32	UNCASED CHIP					85 Cel		16X32	16	-20 Cel			UPPER		R-XUUC-NX		3 V			13.567 MHz		Not Qualified	5 ms		512 bit	1.5 V								3
ST24C04M5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5	3.3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		512X8	512	-20 Cel	NICKEL PALLADIUM GOLD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE	e4				4.9 mm
M34D32-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	4096 words		2.5	2/3.3	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		3.6 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	1.8 V		e0			.000001 Amp	9.55 mm
M34E04B-FMC9TGH	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M93S56-BN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	128 words		5	5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		128X16	128	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e0			.00005 Amp
M93S66-BN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	256 words		5	5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit			e0			.00005 Amp
SRI2K-W4/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3		32	UNCASED CHIP					85 Cel		64X32	64	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		2048 bit	2.5 V								3
ST1301AW2	STMicroelectronics	EEPROM	OTHER							CMOS		SERIAL		2 mA			5	5			WAFER	EEPROMs			70 Cel				-25 Cel												Not Qualified									.0001 Amp
M34D32WMN5	STMicroelectronics	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	4096 words			3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit			e4			.000002 Amp			2.7
M93S66-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		2.5	2/3.3	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X16	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V		e4			.000005 Amp	4.9 mm
M34E04-FMC6TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3
M93S46-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64X16	64	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V		e0			.000005 Amp	4.4 mm
SRT512-SBN18/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		3		32	UNCASED CHIP					85 Cel		16X32	16	-20 Cel			UPPER		X-XUUC-N		3.5 V								512 bit	2.5 V								3
M93S56-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	128 words		5	5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		128X16	128	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit			e4			.00005 Amp
ST24W08B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5	3.3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	TIN LEAD	1010DMMR	DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	3 V		e0				9.55 mm
M34E04-FMC6TP	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3
ST25W08M5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V		e4			.000005 Amp	4.9 mm
ST24C04RM5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	512 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		512X8	512	-20 Cel	TIN LEAD	1010DDMR	DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit			e0			.00001 Amp
SRI4K-SBN18/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		128 words		3		32	UNCASED CHIP					85 Cel		128X32	128	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		4096 bit	2.5 V								3
LRI1KSBN18/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32 words				32	UNCASED CHIP					85 Cel		32X32	32	-20 Cel			UPPER		X-XUUC-N		3 V								1024 bit	1.5 V								3
M34C02-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	256 words			2/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel		256X8	256	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e0			.0000001 Amp	4.9 mm
M34S32-MN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5		8	SMALL OUTLINE			40	1.27 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS					4.9 mm
LRI2K-SBN18/3XX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words				32	UNCASED CHIP					85 Cel		64X32	64	-20 Cel			UPPER		X-XUUC-N		3 V						5.8 ms		2048 bit	1.5 V								3
ST24W08M5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5	3.3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	3 V		e4				4.9 mm
LRIS2KMBTG4ST	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS		64 words				32	FLATPACK				.5 mm	85 Cel		64X32	64	-20 Cel			DUAL		R-XDFP-F8		3 V	.6 mm		13.567 MHz	2 mm	Not Qualified	5.8 ms		2048 bit	1.5 V						3 mm		3
M27C256B-45XN6XTR	STMicroelectronics	EEPROM CARD	OTHER	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	80 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD		DUAL		R-PDSO-G28										262144 bit			e0			.0001 Amp		45 ns	2.7
SRI4K-SBN18/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		128 words		3		32	UNCASED CHIP					85 Cel		128X32	128	-20 Cel			UPPER		X-XUUC-N		3.5 V						5 ms		4096 bit	2.5 V								3
M34E04-FMC8G	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3
ST24C01RM5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5	2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	e4			.00001 Amp	4.9 mm
SRI512-SB12I/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		3		32	UNCASED CHIP					85 Cel		16X32	16	-20 Cel			UPPER		X-XUUC-N		3.5 V								512 bit	2.5 V								3
M34E04-FMC6P	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words		2.2		8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	95 Cel		512X8	512	0 Cel			DUAL		R-PDSO-N8		3.6 V	.6 mm		1 MHz	2 mm		5 ms		4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		3 mm		3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.