OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
M24128-BWMB5G/P	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M24C01-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words			1	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	1KX1	1K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	1.8 V		e4				4.9 mm
M24C16-FBN5P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	2048 words	2.5	1.8/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		2KX8	2K	-20 Cel		1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	9.27 mm
M24C16-WMN5TP	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	SMALL OUTLINE	SOP8,.25			200	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V		e4			.000002 Amp	4.9 mm
M24C32-FMN5TB	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD		DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e0				4.9 mm
M24C08-FMB5TP	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	1024 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20	1	EEPROMs	40	.5 mm	85 Cel		1KX8	1K	-20 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V		e4	30	260	.000001 Amp	3 mm
M24C32-XCU5TG/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-RCU5TP/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24256-BSMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		32KX8	32K	-20 Cel			DUAL		R-PDSO-G8		3.6 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	262144 bit	1.8 V						4.9 mm
M24512-WLA5G	STMicroelectronics	EEPROM	OTHER	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOLCC8,.3		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	1.14 mm	100000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	8 mm
M24C64-WMN5G/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.7		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e4				4.9 mm
M24C08-FBN5G	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	1.8		8	IN-LINE					2.54 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		5 ms	I2C	8192 bit	1.7 V						9.27 mm
M95128-BN5T	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5		8	IN-LINE				40	2.54 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm			7.62 mm	Not Qualified		SPI	131072 bit	4.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION					9.27 mm
M24C32-WMH5G	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.4 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N5		5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	2.5 V						1.7 mm
M24C08-RCS5TP	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		1KX8	1K	-20 Cel			BOTTOM		R-PBGA-B5		5.5 V	.6 mm		.4 MHz	1.025 mm		5 ms	I2C	8192 bit	1.8 V	ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION					1.215 mm
M95080-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		1KX8	1K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	100000 Write/Erase Cycles		7.62 mm	Not Qualified		SPI	8192 bit	2.5 V		e0			.000002 Amp	9.27 mm
M24C64-RMN5G/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e4				4.9 mm
M95128-VBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	3	3/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.33 mm	100000 Write/Erase Cycles		7.62 mm	Not Qualified		SPI	131072 bit	2.7 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e0			.000002 Amp	9.27 mm
M24C32-XCU5G/KF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C04-FMB5G	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	.8 mA	512 words	5	1.8/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		512X8	512	-20 Cel		1010DDMR	DUAL	HARDWARE	R-XDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	3 mm
M95128-WMW5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles		5.25 mm	Not Qualified		SPI	131072 bit	2.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e3			.000002 Amp	5.3 mm
M24128-BFDW5P/P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	1.8		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
M24C32-DFCU5TG/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M24128-BWDW5TG/P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
M24128-BRDW5G/P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
M24C04-FBN5TP	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	2.5		8	IN-LINE					2.54 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm		5 ms	I2C	4096 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		9.27 mm
M24256-BDL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	262144 bit	4.5 V		e0			.00001 Amp	5 mm
M24C64-FMN5GB	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e4				4.9 mm
M24C64-FMN5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M93C66-WMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words	5	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel		256X16	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	CONFIGURABLE AS 256 X 16	e4			.00001 Amp	4.9 mm
M24C16-WDW5P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-PDSO-G8		5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	4.4 mm
M24C32-XCU5P/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-DL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	SERIAL		2 mA	4096 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.635 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit			e0			.00001 Amp
M24512-WBN5P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64KX8	64K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e3			.000002 Amp	9.27 mm
M24C32-XCU5TP/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C64-RBN5P/P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	2.5		8	IN-LINE					2.54 mm	85 Cel		8KX8	8K	-20 Cel	Matte Tin (Sn)		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V		e3				9.27 mm
M24C16-TRMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words			1	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	16KX1	16K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V		e4				4.9 mm
M24128-BWBN5G/P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	5		8	IN-LINE					2.54 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		9.27 mm
M93C76-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	2/3.3	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel		512X16	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	8192 bit	1.8 V	CONFIGURABLE AS 512 X 16	e4			.000005 Amp	4.9 mm
M24C32-WCU5TG/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C64-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	8192 words		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		I2C	65536 bit	2.5 V		e0			.000002 Amp	9.55 mm
M95040-DW5TR	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		512X8	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm	Not Qualified		SPI	4096 bit	4.5 V		e4				4.4 mm
M24C04-RMN5G	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm		5 ms	I2C	4096 bit	1.8 V						4.9 mm
M24C32-XMH6TP	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.4 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N5		5.5 V	.6 mm		1 MHz	1.4 mm		10 ms	I2C	32768 bit	1.6 V						1.7 mm
M24C32-DFCU5P/KF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M93C06-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	16 words	2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	85 Cel		16X16	16	-20 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	256 bit	1.8 V	CONFIGURABLE AS 16 X 16	e0			.000005 Amp	4.4 mm
M24C16-WMH5TG	STMicroelectronics	EEPROM	OTHER	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words			8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16			200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	BOTTOM		R-XBCC-N5		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	2.5 V					.000002 Amp	1.7 mm
M24C32-FDW5GP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e4			.000001 Amp	4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.