OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
M24C32-WMB5TP	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		4096 words	2.7		8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD		DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e0				3 mm
M24C32-WCU5TP/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-RMN5P/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V		e4				4.9 mm
M24256-BWMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		32KX8	32K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	262144 bit	2.5 V		e4			.000002 Amp	4.9 mm
M24C32-FDW5T/C	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V					.000001 Amp	4.4 mm
M24256-ADL5T	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	4.5 V		e0			.00001 Amp	5 mm
M24128-BRMB5G/P	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		3 mm
M95640-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	3.3		8	IN-LINE					2.54 mm	85 Cel		8KX8	8K	-20 Cel	Matte Tin (Sn)		DUAL		R-PDIP-T8		5.5 V	5.33 mm			7.62 mm	Not Qualified		SPI	65536 bit	2.5 V		e3				9.27 mm
M24C64-RCS5TG/P	STMicroelectronics	EEPROM	OTHER	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8KX8	8K	-20 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C64-FBN6P/B	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	1.8		8	IN-LINE					2.54 mm	85 Cel		8KX8	8K	-20 Cel	Matte Tin (Sn)		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e3				9.27 mm
M95640-DL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G14		5.5 V	1.2 mm			4.4 mm	Not Qualified		SPI	65536 bit	4.5 V						5 mm
M95128-SDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		3.6 V	1.2 mm	100000 Write/Erase Cycles	1 MHz	4.4 mm	Not Qualified	10 ms	SPI	131072 bit	1.8 V		e0			.000001 Amp	5 mm
M24C02-FMN6TG	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel		256X8	256	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V		e4	30	260	.000001 Amp	4.9 mm
M24C16-WCS5TG	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.346 mm	85 Cel		2KX8	2K	-20 Cel			BOTTOM		R-PBGA-B5		5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	2.5 V						1.255 mm
M24C04-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words			1	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	4KX1	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V		e4				4.9 mm
M93C06-RDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	16 words	2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	85 Cel		16X16	16	-20 Cel	TIN LEAD		DUAL	SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	256 bit	1.8 V	CONFIGURABLE AS 16 X 16	e0			.000005 Amp	4.4 mm
M24256-AWDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	32768 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	10100DDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	4.4 mm	Not Qualified	10 ms	I2C	262144 bit	2.5 V		e0			.000002 Amp	5 mm
M24C16-RCS5G	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		2048 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.346 mm	85 Cel		2KX8	2K	-20 Cel			BOTTOM		R-PBGA-B5		5.5 V	.6 mm		.4 MHz	1.21 mm		5 ms	I2C	16384 bit	1.8 V						1.255 mm
M24C64-RDW5P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
M95020-SMN5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X8	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V		e4			.000002 Amp	4.9 mm
M24128-BMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	131072 bit	4.5 V		e4			.00001 Amp	4.9 mm
M93C66-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words	2.5	2/3.3	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	85 Cel		256X16	256	-20 Cel			DUAL	SOFTWARE	R-PDIP-T8		3.6 V	5.9 mm	1000000 Write/Erase Cycles	.5 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V	CONFIGURABLE AS 256 X 16	e0	NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	9.55 mm
M93C76-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5		16	SMALL OUTLINE		8			1.27 mm	85 Cel		512X16	512	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	8192 bit	1.8 V	CONFIGURABLE AS 512 X 16	e4				4.9 mm
M95080-SBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	2.5		8	IN-LINE				40	2.54 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDIP-T8		3.6 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION					9.27 mm
M24C32-FMN5G	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V		e3			.000001 Amp	4.9 mm
M95080-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.5	2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	1KX8	1K	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.9 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V		e0			.000001 Amp	9.55 mm
M24C16-FMN5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-PDSO-G8		5.5 V	1.75 mm	4000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V					.000001 Amp	4.9 mm	1.8
M95010-WDW5TR	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	3.3	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		128X8	128	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles		3 mm	Not Qualified		SPI	1024 bit	2.5 V		e0			.00001 Amp	4.4 mm
M24128-MW5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		2 mA	16384 words	5	5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	Tin/Lead (Sn/Pb)	1010000R	DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	131072 bit			e0			.00001 Amp
M24C64-RCS5TP/P	STMicroelectronics	EEPROM	OTHER	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		8192 words	2.5		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		8KX8	8K	-20 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M24C16-TRBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words			1	IN-LINE					2.54 mm	85 Cel	OPEN-DRAIN	16KX1	16K	-20 Cel	MATTE TIN		DUAL		R-PDIP-T8		3.6 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	1.8 V		e3				9.55 mm
M24C32-XCU5TP/TF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-XCU5TP/K	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C32-WDW5TP/P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V		e4				4.4 mm
M24C32-DFCU5G/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24256-BRDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	32768 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	262144 bit	1.8 V		e0			.000001 Amp	4.4 mm
M24C16-FMH5G	STMicroelectronics	EEPROM	OTHER	5	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	2048 words	1.8		8	CHIP CARRIER, VERY THIN PROFILE	SOLCC5,.06,16			200	.4 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	BOTTOM		R-XBCC-N5		5.5 V	.6 mm	4000000 Write/Erase Cycles	.4 MHz	1.4 mm		5 ms	I2C	16384 bit	1.7 V					.000001 Amp	1.7 mm	1.8
M24C32-RCU5P/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C04-WMN5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words			8	SMALL OUTLINE					1.27 mm	85 Cel		512X8	512	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm		5 ms	I2C	4096 bit	2.5 V						4.9 mm
M24512-WLA5TP	STMicroelectronics	EEPROM	OTHER	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOLCC8,.3		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	1.14 mm	100000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	8 mm
M24C08-FMN5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	1024 words	1.8	1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		1KX8	1K	-20 Cel		1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.7 V					.000001 Amp	4.9 mm
M24C16-RDW5P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-20 Cel		1010DDDR	DUAL		R-PDSO-G8		5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm		5 ms	I2C	16384 bit	1.8 V					.000001 Amp	4.4 mm	2.5
M24C32-WCS5TP/P	STMicroelectronics	EEPROM	OTHER	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		4096 words	2.7		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M95128-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles		3.9 mm	Not Qualified		SPI	131072 bit	4.5 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4			.00002 Amp	4.9 mm
M24C32-WCU5TP/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-FDW5TP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V		e0			.000001 Amp	4.4 mm
M24C32-WCU5TG/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C08-RDW5P	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm		5 ms	I2C	8192 bit	1.8 V	ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION					4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.