OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S524A40X10-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	128X8	128	-25 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V					.000001 Amp	4.4 mm
S524C80D81-SCB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	1024 words			2.5/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	1KX8	1K	-25 Cel				1010DMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		8192 bit						.000005 Amp
S524AE0XH1-RCU	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	65536 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	50	.635 mm	70 Cel	64KX8	64K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				500000 Write/Erase Cycles			Not Qualified		I2C		524288 bit						.000001 Amp
S524C20D11-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	3.3			8	SMALL OUTLINE					70 Cel	128X8	128	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		1024 bit	2.5 V		e0
S524C80D41-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	512 words			2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.3	EEPROMs	100	.635 mm	70 Cel	512X8	512	-25 Cel				1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		4096 bit						.000005 Amp
K8S1115ETC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524AD0XD1-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			16384 words	2.5			8	IN-LINE				2.54 mm	70 Cel	16KX8	16K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		1 MHz	7.62 mm	Not Qualified	5 ms	I2C		131072 bit	1.8 V						9.2 mm
KFG1G16Q2C-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3						Not Qualified				1073741824 bit		1K		260	NAND TYPE	.00005 Amp			11 ns	2.7	NO
KS24A041CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4096 words	2.5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	4KX1	4K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		4096 bit	1.8 V						4.4 mm
KS24A161CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16384 words	2.5			1	SMALL OUTLINE				1.27 mm	70 Cel	16KX1	16K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V						4.92 mm
KFG1216Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	32MX16	32M	-30 Cel	512	YES			YES	BOTTOM		R-PBGA-B63	3						Not Qualified				536870912 bit		1K		260	NAND TYPE	.00005 Amp			11 ns	2.7	NO
KS24C021CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		3/5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX1	2K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	10 ms	I2C		2048 bit	2.2 V					.000005 Amp	4.92 mm
KS24A641CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			65536 words	2			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	64KX1	64K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		65536 bit	1.8 V						4.4 mm
KS24L641CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	65536 words	5		2/5.5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	64KX1	64K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		65536 bit	2 V		e0			.000002 Amp	4.92 mm
K8S1115ETC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KFWAGH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	1GX16	1G	-30 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	17179869184 bit		2K	e3		NAND TYPE	.0001 Amp			76 ns	2.7	NO
K8P2815UQC-GE4BT	Samsung	EEPROM CARD	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32	Flash Memories		.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B80	1						Not Qualified			BOTTOM/TOP	134217728 bit		8	e3	260	NOR TYPE	.00003 Amp		YES	65 ns	2.7	YES
KS24C041CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2.2/5.5	1	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	4KX1	4K	-25 Cel			TIN LEAD	1010DDXR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	10 ms	I2C		4096 bit	2.2 V		e0			.000005 Amp	4.92 mm
S524L50X51-SCB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	2048 words			2/5.5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K	-25 Cel				1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit						.000002 Amp
S524A60X51-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	70 Cel	2KX8	2K	-25 Cel			TIN LEAD	1010MMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V		e0			.000001 Amp	4.4 mm
S524AD0XD1-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	50	.635 mm	70 Cel	16KX8	16K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				500000 Write/Erase Cycles			Not Qualified		I2C		131072 bit						.000001 Amp
S524LB0D91-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			4096 words	3.3			8	IN-LINE				2.54 mm	70 Cel	4KX8	4K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.1 MHz	7.62 mm	Not Qualified	5 ms	I2C		32768 bit	2 V						9.2 mm
S524C20D21-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	3.3			8	SMALL OUTLINE				1.27 mm	70 Cel	256X8	256	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.95 mm		.1 MHz	3.95 mm	Not Qualified	10 ms	I2C		2048 bit	2.5 V		e0				4.92 mm
KFM1G16Q2A-DED60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				1073741824 bit		1K	e3		NAND TYPE	.00005 Amp			76 ns	2.7	NO
KS24C040CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2.2/5.5	1	SMALL OUTLINE	TSSOP8,.3	EEPROMs	100	.65 mm	70 Cel	4KX1	4K	-25 Cel			Tin/Lead (Sn/Pb)	1010DDXR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		4096 bit	2.2 V		e0			.000005 Amp	4.4 mm
KFH8GH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	512MX16	512M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	8589934592 bit		2K	e3		NAND TYPE	.0001 Amp			76 ns	2.7	NO
KFH8GH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	512MX16	512M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	8589934592 bit		2K	e3		NAND TYPE	.0001 Amp			76 ns	2.7	NO
S524LB0X91-SCTB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	4096 words			2/5.5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	4KX8	4K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		32768 bit						.000002 Amp
S524L50D51-DCB0	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	2048 words			2/5.5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	2KX8	2K	-25 Cel				1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit						.000002 Amp
KS24A161CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16384 words	2.5			1	SMALL OUTLINE				1.27 mm	70 Cel	16KX1	16K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V						4.92 mm
S524A40X11-DCB	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	128 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	100	2.54 mm	70 Cel	128X8	128	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit						.000001 Amp
S524C20D11-RC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	3.3			8	SMALL OUTLINE					70 Cel	128X8	128	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		1024 bit	2.5 V		e0
S524C80D41-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE					70 Cel	512X8	512	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		4096 bit	2.5 V		e0
S524C80D81-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE					70 Cel	1KX8	1K	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		8192 bit	2.5 V		e0
S524AE0XH1-DCU	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	65536 words			2/5	8	IN-LINE	DIP8,.3	EEPROMs	50	2.54 mm	70 Cel	64KX8	64K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDIP-T8				500000 Write/Erase Cycles			Not Qualified		I2C		524288 bit						.000001 Amp
KFN2G16Q2A-DED6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				2147483648 bit		1K	e3		NAND TYPE	.00005 Amp			76 ns	2.7	NO
KS24L161CTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	2048 words			2/5.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8(UNSPEC)	EEPROMs	100		70 Cel	2KX8	2K	-25 Cel			Tin/Lead (Sn/Pb)	1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit			e0			.000002 Amp
K8S1215EBC-SE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit			e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1015ETC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit			e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524LB0XB1-SCB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	8192 words			2/5.5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	8KX8	8K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		65536 bit						.000002 Amp
K8S1015ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1315EZC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20	Flash Memories		.5 mm	85 Cel	32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524C80D80-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	1KX8	1K	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C		8192 bit	2.5 V		e0				4.4 mm
KS24C01CTTF	Samsung	EEPROM CARD	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	128 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	70 Cel	128X8	128	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit			e0			.000005 Amp				2.7
KS24A081CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8192 words	2.5			1	SMALL OUTLINE				.65 mm	70 Cel	8KX1	8K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		8192 bit	1.8 V						4.4 mm
KS24L161CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	16384 words	5		2/5.5	1	SMALL OUTLINE	SOP8(UNSPEC)	EEPROMs	100	1.27 mm	70 Cel	16KX1	16K	-25 Cel			TIN LEAD	1010MMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		16384 bit	2 V		e0			.000002 Amp	4.92 mm
S524L50D51-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	2KX8	2K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	5 ms	I2C		16384 bit	2 V						4.4 mm
S524A60X51-SCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	70 Cel	2KX8	2K	-25 Cel				1010MMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.8 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V					.000001 Amp	4.92 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.