OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
PCA8581TD-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	4.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS		e4				.00001 Amp	4.9 mm
PCD8582D-2P	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words		5			8	IN-LINE			40	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							9.5 mm
PCD8598D-2T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words		5			8	SMALL OUTLINE			40	1.27 mm	70 Cel	OPEN-DRAIN	1KX8	1K	-25 Cel						DUAL			R-PDSO-G8		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							7.55 mm
PCA8581CTD-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1 mA	128 words				3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL			R-PDSO-G8		6 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	2.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS		e4				.00001 Amp	4.9 mm
PCA8581T-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words		5			8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel						DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms		1024 bit	4.5 V	10 YEAR OF DATA RETENTION							4.9 mm		5
NXH5104UK/A1	NXP Semiconductors	EEPROM	OTHER	13	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			4194304 words		1.2			1	GRID ARRAY	BGA13,3X6,16		10	.4 mm	85 Cel		4MX1	4M	-20 Cel						BOTTOM	1		R-PBGA-B13		2 V	.42 mm	500000 Write/Erase Cycles		2.74 mm			SPI	4194304 bit	1 V								2.8 mm		1.2
PCA8581CP	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words					8	IN-LINE				2.54 mm	85 Cel		128X8	128	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms		1024 bit	2.5 V								9.5 mm		3
PCD8582D-2T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words		5			8	SMALL OUTLINE			40	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	-25 Cel						DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							4.9 mm
PCD8598D-2P	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1024 words		5			8	IN-LINE			40	2.54 mm	70 Cel	OPEN-DRAIN	1KX8	1K	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							9.5 mm
PCD8594D-2T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words		5			8	SMALL OUTLINE			40	1.27 mm	70 Cel	OPEN-DRAIN	512X8	512	-25 Cel						DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							4.9 mm
PCA8581CT-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words		5			8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel						DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms		1024 bit	2.5 V	10 YEAR OF DATA RETENTION							4.9 mm		3
PCA8581PN	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	128 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel				1010DDDR		DUAL			R-PDIP-T8		5.5 V	4.2 mm	10000 Write/Erase Cycles		7.62 mm	Not Qualified		I2C	1024 bit	4.5 V	10 YEAR OF DATA RETENTION			40	250		.00001 Amp	9.5 mm		5
PCD8582DP	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			256 words		5			8	IN-LINE				2.54 mm	70 Cel		256X8	256	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	25 ms	I2C	2048 bit	3 V	I2C BUS INTERFACE; FMAX IS 100KHZ							9.5 mm
PCA8581P/F6,112	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1 mA	128 words		5		5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDIP-T8		5.5 V	4.2 mm	10000 Write/Erase Cycles		7.62 mm	Not Qualified		I2C	1024 bit	4.5 V	10 YEAR OF DATA RETENTION		e4				.00001 Amp	9.5 mm		5
PCA8581CPN	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			128 words		5			8	IN-LINE			10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm			7.62 mm	Not Qualified			1024 bit	2.5 V	10 YEAR OF DATA RETENTION							9.5 mm		3
PCD8582DT	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel		256X8	256	-25 Cel						DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	25 ms	I2C	2048 bit	3 V	I2C BUS INTERFACE; FMAX IS 100KHZ							4.9 mm
PCA8581T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words		5			8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel						DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms		1024 bit	4.5 V	10 YEAR OF DATA RETENTION			40	260			4.9 mm		5
PCD8594D-2P	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			512 words		5			8	IN-LINE			40	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512	-25 Cel						DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE							9.5 mm
PCA8581T/6,118	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8		5.5 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	4.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS		e4				.00001 Amp	4.9 mm
PCA8581CT/6,118	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1 mA	128 words				3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel			NICKEL PALLADIUM GOLD	1010DDDR		DUAL			R-PDSO-G8		6 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	2.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS		e4				.00001 Amp	4.9 mm
SLE4406SPED	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	UNCASED CHIP					80 Cel		512X1	512	-40 Cel						UPPER			R-XUUC-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE5532M3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5			8	MICROELECTRONIC ASSEMBLY					80 Cel		256X8	256	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified	5 ms		2048 bit	4.5 V										5
SLE4406SPD	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	UNCASED CHIP					80 Cel		512X1	512	-40 Cel						UPPER			R-XUUC-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE5542D	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel						UPPER		SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V										5
SLE4428C	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		10 mA	1024 words		5		5	8	UNCASED CHIP	WAFER	EEPROMs	10		100 Cel		1KX8	1K	-35 Cel						UPPER		SOFTWARE	R-XUUC-N8		5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS						.01 Amp
SLE5532MFC3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5			8	MICROELECTRONIC ASSEMBLY					80 Cel		256X8	256	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified	5 ms		2048 bit	4.5 V										5
SLE5552D	Infineon Technologies	EEPROM	OTHER							MOS		SERIAL				256 words		5		5	8		DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel								SOFTWARE					100000 Write/Erase Cycles			Not Qualified			2048 bit
SLE4418M2.2	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		10 mA	1024 words		5		5	8	UNCASED CHIP	MODULE,8LEAD,.46	EEPROMs	10		100 Cel		1KX8	1K	-35 Cel						UPPER		SOFTWARE	R-XUUC-N8		5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS						.01 Amp
SLE5542MFC3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5			8	MICROELECTRONIC ASSEMBLY					80 Cel		256X8	256	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified	5 ms		2048 bit	4.5 V										5
SLE4406SPMFC3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	MICROELECTRONIC ASSEMBLY					80 Cel		512X1	512	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE5532D	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel						UPPER		SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V										5
SLE5532C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel						UPPER		SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V										5
SLE5542C	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5		5	8	UNCASED CHIP	DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel						UPPER		SOFTWARE	R-XUUC-N		5.5 V		100000 Write/Erase Cycles			Not Qualified	5 ms		2048 bit	4.5 V										5
SLE5552C	Infineon Technologies	EEPROM	OTHER							MOS		SERIAL				256 words		5		5	8		DIE OR CHIP	EEPROMs	10		80 Cel		256X8	256	-40 Cel								SOFTWARE					100000 Write/Erase Cycles			Not Qualified			2048 bit
SLE4406SPEMFC3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	MICROELECTRONIC ASSEMBLY					80 Cel		512X1	512	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE4406SPEC	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	UNCASED CHIP					80 Cel		512X1	512	-40 Cel						UPPER			R-XUUC-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE4418C	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		10 mA	1024 words		5		5	8	UNCASED CHIP	WAFER	EEPROMs	10		100 Cel		1KX8	1K	-35 Cel						UPPER		SOFTWARE	R-XUUC-N8		5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS						.01 Amp
SLE4428M2.2	Infineon Technologies	EEPROM	OTHER	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		10 mA	1024 words		5		5	8	UNCASED CHIP	MODULE,8LEAD,.46	EEPROMs	10		100 Cel		1KX8	1K	-35 Cel						UPPER		SOFTWARE	R-XUUC-N8		5.5 V		10000 Write/Erase Cycles			Not Qualified		3-WIRE	8192 bit	4.5 V	DATA RETENTION => 10 YEARS						.01 Amp
SLE4406SPC	Infineon Technologies	EEPROM	OTHER		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	UNCASED CHIP					80 Cel		512X1	512	-40 Cel						UPPER			R-XUUC-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE4406SPM3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	MICROELECTRONIC ASSEMBLY					80 Cel		512X1	512	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified			512 bit	4.5 V										5
SLE5542M3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			256 words		5			8	MICROELECTRONIC ASSEMBLY					80 Cel		256X8	256	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified	5 ms		2048 bit	4.5 V										5
SLE4406SPEM3	Infineon Technologies	EEPROM	OTHER		DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			512 words		5			1	MICROELECTRONIC ASSEMBLY					80 Cel		512X1	512	-40 Cel						DUAL			R-XDMA-N		5.5 V					Not Qualified			512 bit	4.5 V										5
DS25LV02R+T&R	Maxim Integrated	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS			128 words	COMMON	2.5		2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37	Other Memory ICs		.95 mm	85 Cel		128X8	128	-30 Cel			MATTE TIN			DUAL			R-PDSO-G5	1	5.5 V					Not Qualified		1-WIRE	1024 bit	2.2 V			e3						15000 ns
DS1961S-F3#	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words					1	DISK BUTTON					85 Cel		1KX1	1K	-20 Cel			MATTE TIN			END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e3
DS1961S-F3	Maxim Integrated	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			1024 words				3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs			85 Cel		1KX1	1K	-20 Cel			TIN LEAD			END			O-MEDB-N2	1	5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V			e0
TC9WMA1FK(EL)	Toshiba	EEPROM	OTHER	8	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words		3			8	SMALL OUTLINE, SHRINK PITCH				.5 mm	70 Cel		128X8	128	-30 Cel			TIN LEAD			DUAL			R-PDSO-G8		3.6 V			1 MHz	2 mm	Not Qualified		3-WIRE	1024 bit	2.7 V			e0					2.3 mm
TC9WMA1FK	Toshiba	EEPROM	OTHER	8	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1.5 mA	128 words		3		3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP8,.12,20	EEPROMs	10	.5 mm	70 Cel		128X8	128	-30 Cel			Tin/Lead (Sn/Pb)			DUAL		SOFTWARE	R-PDSO-G8		3.6 V	.9 mm	100000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified		3-WIRE	1024 bit	2.7 V			e0				.000005 Amp	2.3 mm
TC58512FTI	Toshiba	EEPROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS	16K	30 mA	67108864 words		3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel		64MX8	64M	-40 Cel	4K	YES	TIN LEAD		YES	DUAL			R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			536870912 bit	2.7 V		512	e0			NAND TYPE	.0001 Amp	18.4 mm	35 ns	3	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.