OTHER EEPROM 1,939

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
M95010-WMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm	Not Qualified		SPI	1024 bit	2.5 V		e4			.00001 Amp	4.9 mm
M95080-SDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				40	.65 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-G8		3.6 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION					4.4 mm
M24512-SMW5G	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	65536 words	2.5	2/3.3	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		3.6 V	2.03 mm	100000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V		e3			.000001 Amp	5.3 mm
M93C66-RDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words	2.5	2/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	40	.65 mm	85 Cel		256X16	256	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	.5 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V	CONFIGURABLE AS 256 X 16	e4			.000005 Amp	4.4 mm
M24C32-DFCU5TP/PF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.7 V						.795 mm
M24512-MJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOP16,.4		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		5.5 V	2.65 mm	100000 Write/Erase Cycles	.4 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	10.3 mm
M24C32-WCU5G/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	2.5 V						.795 mm
M24C32-XDW5G	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm		10 ms	I2C	32768 bit	1.6 V						4.4 mm
M24C32-RCU5G/KF	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.32 mm		1 MHz	.674 mm		5 ms	I2C	32768 bit	1.8 V						.795 mm
M24C32-WMC5TG	STMicroelectronics	EEPROM	OTHER	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N8		5.5 V	.6 mm		1 MHz	2 mm		5 ms	I2C	32768 bit	2.5 V						3 mm
M24C32-DFCU5P/T	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		5 ms	I2C	32768 bit	1.6 V						.795 mm
M95320-SDW5T	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	4096 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	32768 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4			.000001 Amp	4.4 mm
M24C32-FMN5TGB	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e4				4.9 mm
M24C64-RDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel	OPEN-DRAIN	8KX8	8K	-20 Cel			DUAL		R-PDSO-G14		3.6 V	1.2 mm		.1 MHz	4.4 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V						5 mm
M24C64-FDW5TPP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e4			.000001 Amp	4.4 mm
M95080-SMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5		8	SMALL OUTLINE				40	1.27 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-G8		3.6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION					4.9 mm
M24C32-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	4096 words		2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.8 V		e4			.000001 Amp	4.9 mm
M24C32-XCU5TG/P	STMicroelectronics	EEPROM	OTHER	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	5 mA	4096 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.4 mm	85 Cel		4KX8	4K	-20 Cel			BOTTOM		R-PBGA-B4		5.5 V	.345 mm		.4 MHz	.674 mm		10 ms	I2C	32768 bit	1.6 V						.795 mm
M24C02-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words			1	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	2KX1	2K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V		e4				4.9 mm
M93C06-RMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	16 words	2.5	2/3.3	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel		16X16	16	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	256 bit	1.8 V	CONFIGURABLE AS 16 X 16	e4			.000005 Amp	4.9 mm
M24512-LA5	STMicroelectronics	EEPROM	OTHER	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	SMALL OUTLINE	SOLCC8,.3		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-N8		5.5 V	1.14 mm	100000 Write/Erase Cycles	.4 MHz	5 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e0			.00001 Amp	8 mm
M24C64-WMW5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	1000000 Write/Erase Cycles		5.25 mm	Not Qualified		I2C	65536 bit	2.5 V		e0			.000002 Amp	5.3 mm
M95010-MN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	128 words	5	5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X8	128	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm	Not Qualified		SPI	1024 bit	4.5 V		e4			.00001 Amp	4.9 mm
M95160-SMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5		8	SMALL OUTLINE				40	1.27 mm	85 Cel		2KX8	2K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	SPI	16384 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION	e4				4.9 mm
M24512-WMW5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	65536 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	2.03 mm	100000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	524288 bit	2.5 V		e3			.000002 Amp	5.3 mm
M95128-SMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	16384 words	2.5	2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	131072 bit	1.8 V		e4			.000001 Amp	4.9 mm
M93C86-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.5	2/3.3	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel		1KX16	1K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL	SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	16384 bit	1.8 V	CONFIGURABLE AS 1K X 16	e4			.000005 Amp	4.9 mm
M24512-BN5P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	65536 words	5	5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64KX8	64K	-20 Cel	MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.33 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	524288 bit	4.5 V		e3			.00001 Amp	9.27 mm
M95640-DW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	5		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.2 mm			3 mm	Not Qualified		SPI	65536 bit	4.5 V		e4				4.4 mm
M24C64-WBN5P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	2.7		8	IN-LINE					2.54 mm	85 Cel		8KX8	8K	-20 Cel	MATTE TIN		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V		e3				9.27 mm
M24128-BFCS5P/P	STMicroelectronics	EEPROM	OTHER	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		16384 words	1.8		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16KX8	16K	-20 Cel			BOTTOM		R-PBGA-B8		5.5 V	.635 mm		.4 MHz	1.4 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		1.805 mm
M95128-RBN5T	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	2.5		8	IN-LINE				40	2.54 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDIP-T8		3.6 V	5.9 mm		1 MHz	7.62 mm	Not Qualified	10 ms	SPI	131072 bit	1.8 V	100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION					9.55 mm
M95020-SDW5TR	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-20 Cel	TIN LEAD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	SPI	2048 bit	1.8 V		e0			.000002 Amp	4.4 mm
M24128-BRDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.5 mA	16384 words	2.5	2/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.16		EEPROMs	40	.65 mm	85 Cel		16KX8	16K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	131072 bit	1.8 V		e4			.000001 Amp	4.4 mm
M24C32-FMN3P/B	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e4				4.9 mm
M24128-BFBN5TG/P	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		16384 words	1.8		8	IN-LINE					2.54 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		9.27 mm
M24C64-FBN3P/B	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words	1.8		8	IN-LINE					2.54 mm	85 Cel		8KX8	8K	-20 Cel	Matte Tin (Sn)		DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	6.37 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e3				9.27 mm
M95040-RBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words	2.5	2/3.3	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-20 Cel	Matte Tin (Sn)		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		3.6 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	1.8 V		e3			.000002 Amp	9.55 mm
M24C08-WMN5P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words			8	SMALL OUTLINE					1.27 mm	85 Cel		1KX8	1K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm		5 ms	I2C	8192 bit	2.5 V	ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION					4.9 mm
M24C32-FMH5TP	STMicroelectronics	EEPROM	OTHER	5	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		8	SMALL OUTLINE, VERY THIN PROFILE					.4 mm	85 Cel		4KX8	4K	-20 Cel			DUAL		R-PDSO-N5		5.5 V	.6 mm		1 MHz	1.4 mm		5 ms	I2C	32768 bit	1.7 V						1.7 mm
M24128-BRMN5P/P	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.5		8	SMALL OUTLINE					1.27 mm	85 Cel		16KX8	16K	-20 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24C08-TRMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words			1	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	8KX1	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V		e4				4.9 mm
M24512-RMJ5	STMicroelectronics	EEPROM	OTHER	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	65536 words	2.5	2/3.3	8	SMALL OUTLINE	SOP16,.4		EEPROMs	40	1.27 mm	85 Cel		64KX8	64K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	524288 bit	1.8 V		e0			.000001 Amp	10.3 mm
M24256-BDL5	STMicroelectronics	EEPROM	OTHER	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	32768 words	5	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25		EEPROMs	40	.65 mm	85 Cel		32KX8	32K	-20 Cel	TIN LEAD	1010DDDR	DUAL	HARDWARE	R-PDSO-G14		5.5 V	1.2 mm	100000 Write/Erase Cycles		4.4 mm	Not Qualified		I2C	262144 bit	4.5 V		e0			.00001 Amp	5 mm
M24C64-FMN6TG/B	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	1.8		8	SMALL OUTLINE					1.27 mm	85 Cel		8KX8	8K	-20 Cel	NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.7 V		e4				4.9 mm
M24C02-FDW6G	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	.8 mA	256 words		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		256X8	256	-20 Cel		1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	4000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED	.000001 Amp	4.4 mm
M24C32-FDW5TGP	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	1.8	1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-20 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	32768 bit	1.7 V		e4			.000001 Amp	4.4 mm
M24C08-WCT5TP	STMicroelectronics	EEPROM	OTHER	5	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel		1KX8	1K	-20 Cel			BOTTOM		R-PBGA-B5		5.5 V	.33 mm		.4 MHz	1.025 mm		5 ms	I2C	8192 bit	2.5 V	ALSO AVALIABLE IN 100 KHZ AND VOLATGE AND TEMPERATURE CAPTURED BASED ON ORDERING INFORMATION					1.215 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.