Analog Devices EEPROM 130

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
DS24B33S+T&R	Analog Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		4096 words		3/5	1	SMALL OUTLINE	SOP8,.3	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			S-PDSO-G8	1	5.25 V	2.13 mm	50000 Write/Erase Cycles		5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260	5.31 mm
DS24B33S+	Analog Devices	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		4096 words		3/5	1	SMALL OUTLINE	SOP8,.3	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			S-PDSO-G8	1	5.25 V	2.13 mm	50000 Write/Erase Cycles		5.285 mm	Not Qualified		1-WIRE	4096 bit	2.8 V		e3	30	260	5.31 mm
DS2431P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm			NO
DS2431P-A1+T	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260	3.94 mm
DS2431P-A1+	Analog Devices	EEPROM	AUTOMOTIVE	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	5	5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	125 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	4.5 V		e3	30	260	3.94 mm
DS2431P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm			NO
DS24B33Q+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4096 words	4.5		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel			4KX1	4K	-40 Cel			DUAL			S-PDSO-N6		5.25 V	.8 mm			3 mm			1-WIRE	4096 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED	3 mm
DS2430AP+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260	3.94 mm
DS28EC20P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V		e3	30	260	3.94 mm
DS24B33+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS24B33+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM			O-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	4096 bit	2.8 V		e3	20	250
DS24B33Q+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			S-PDSO-N6	1	5.25 V	.8 mm			3 mm			1-WIRE	4096 bit	2.8 V		e3	30	260	3 mm
DS24B33G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		4096 words	4.5		1	CHIP CARRIER, VERY THIN PROFILE					85 Cel			4KX1	4K	-40 Cel		NICKEL PALLADIUM GOLD	BOTTOM			S-XBCC-B2		5.25 V	1 mm			6 mm			1-WIRE	4096 bit	2.8 V		e4			6 mm
DS2431X-S+	Analog Devices	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	TIN SILVER COPPER NICKEL	BOTTOM		HARDWARE	S-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e2	30	260	1.68 mm			NO
DS24B33G+U	Analog Devices	EEPROM CARD	INDUSTRIAL	2			PLASTIC/EPOXY	YES				SERIAL			512 words		3/5	8		SURF MNT 2,.25SQ	EEPROMs			85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD					1			50000 Write/Erase Cycles			Not Qualified			4096 bit			e4					2.7
DS2431Q+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37	EEPROMs	40	.95 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL		HARDWARE	S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3 mm			NO
DS2431G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD	BOTTOM		HARDWARE	S-XBCC-B2		5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4			6 mm			NO
DS28EC20P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V		e3	30	260	3.94 mm
DS2431+T&R	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3		250				NO
DS2431+	Analog Devices	EEPROM	INDUSTRIAL	3		RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed	BOTTOM		HARDWARE	R-PBCY-T3		5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3		250				NO
DS2431GA+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD	BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4			6.5 mm			NO
DS28E07P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE			10	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	10000 Write/Erase Cycles		3.94 mm			1-WIRE	1024 bit	3 V		e3	30	260	4.29 mm		3
DS2430AP+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	C BEND	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	6 V	1.5 mm	100000 Write/Erase Cycles	.0163 MHz	3.76 mm	Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3	30	260	3.94 mm
DS28EC20+T	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM			O-XBCY-W3		5.25 V		200000 Write/Erase Cycles			Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28E07P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE			10	1.27 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		HARDWARE	R-PDSO-C6	1	5.25 V	1.5 mm	10000 Write/Erase Cycles		3.94 mm			1-WIRE	1024 bit	3 V		e3	30	260	4.29 mm		3
DS28EC20Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	VQCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			1	CHIP CARRIER, VERY THIN PROFILE	SOLCC6,.11,37		40	.95 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL	1		S-XDSO-N6	1	5.25 V	.8 mm	200000 Write/Erase Cycles		3 mm			1-WIRE	20480 bit	4 V		e3	30	260	3 mm
DS28EC20+	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	UNSPECIFIED	NO	1	CMOS	WIRE	SERIAL	ASYNCHRONOUS	.9 mA	20480 words		5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM			O-XBCY-W3		5.25 V		200000 Write/Erase Cycles			Not Qualified		1-WIRE	20480 bit	4 V		e3		250
DS28E07Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			10	.65 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		HARDWARE	S-PDSO-N6	1	5.25 V	.8 mm	10000 Write/Erase Cycles		3 mm			1-WIRE	1024 bit	3 V		e3	30	260	3 mm		3
DS28E07+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words			1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V		e3		250			3
DS28E05R+T	Analog Devices	EEPROM	INDUSTRIAL	3	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		64 words	3.3		1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-G3	1	3.63 V	1.12 mm			1.3 mm			1-WIRE	64 bit	2.75 V		e3	30	260	2.92 mm
DS2430A+T&R	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		MATTE TIN	BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS2430A+	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		256 words	5	3/5	1	CYLINDRICAL	SIP3,.1,50	EEPROMs		1.27 mm	85 Cel			256X1	256	-40 Cel		MATTE TIN	BOTTOM			O-PBCY-T3		6 V		100000 Write/Erase Cycles	.0163 MHz		Not Qualified	10 ms	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3		250
DS28E07Q+U	Analog Devices	EEPROM		6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37		10	.95 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel			DUAL		HARDWARE	S-PDSO-N6		5.25 V	.8 mm	10000 Write/Erase Cycles		3 mm			1-WIRE	1024 bit	3 V	DATA RETENTION TIME @ 85 DEGREE CENTIGRADE				3 mm		3
DS2431GB+T	Analog Devices	EEPROM	INDUSTRIAL	2			PLASTIC/EPOXY	YES	1	CMOS		SERIAL	ASYNCHRONOUS		256 words	3.3	3/5	4		SURF MNT 2,.14X.2	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	NICKEL PALLADIUM GOLD			HARDWARE			5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4						NO
DS2431GA+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.14X.25	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL GOLD PALLADIUM	BOTTOM		HARDWARE	R-XBCC-B2		5.25 V	.8 mm	50000 Write/Erase Cycles		3.5 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS				6.5 mm			NO
DS2431G+U	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD	BOTTOM		HARDWARE	S-XBCC-B2	1	5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4			6 mm			NO
DS28E07+T	Analog Devices	EEPROM	INDUSTRIAL	3	TO-92	ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words			1	CYLINDRICAL			10	2.6 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM		HARDWARE	O-XBCY-T3		5.25 V		10000 Write/Erase Cycles					1-WIRE	1024 bit	3 V		e3		250			3
DS1990A-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words	3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	END			O-MEDB-N2		6 V					Not Qualified		1-WIRE	64 bit	2.8 V		e3				15000 ns
DS28E01P-100+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260	3.94 mm
DS1961S-F5+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words			1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	1024 bit	2.8 V		e3
DS2431GB+U	Analog Devices	EEPROM	INDUSTRIAL	2			PLASTIC/EPOXY	YES	1	CMOS		SERIAL	ASYNCHRONOUS		256 words	3.3	3/5	4		SURF MNT 2,.14X.2	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	NICKEL PALLADIUM GOLD			HARDWARE			5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4						NO
DS2431G+	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3	3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel			1KX1	1K	-40 Cel		NICKEL PALLADIUM GOLD	BOTTOM			S-XBCC-B2		5.25 V	.95 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e4			6 mm
DS2431GA+T&	Analog Devices	EEPROM																																										1-WIRE					NOT SPECIFIED	NOT SPECIFIED
DS28E22P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		2048 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	2048 bit	2.97 V		e3	30	260	4.29 mm
DS2431Q+U	Analog Devices	EEPROM	INDUSTRIAL	6	SON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		256 words	3.3	3/5	4	SMALL OUTLINE	SOLCC6,.11,37	EEPROMs	40	.95 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	Matte Tin (Sn) - annealed	DUAL		HARDWARE	R-PDSO-N6	1	5.25 V		50000 Write/Erase Cycles			Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260				NO
DS1977-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		32768 words	5		1	DISK BUTTON					85 Cel			32KX1	32K	-40 Cel		Matte Tin (Sn) - annealed	END			O-MEDB-N2		5.25 V					Not Qualified		1-WIRE	32768 bit	2.8 V		e3
DS28E15P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		512 words	3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed	DUAL			R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm			1-WIRE	512 bit	2.97 V		e3	30	260	4.29 mm
DS1971-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words	5		8	DISK BUTTON					85 Cel			32X8	32	-40 Cel		Matte Tin (Sn) - annealed	END			O-MEDB-N2		6 V			.0163 MHz		Not Qualified		1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.