Analog Devices EEPROM 130

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
DS1972-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel	1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	END	O-MEDB-N2		5.25 V		50000 Write/Erase Cycles			Not Qualified	1-WIRE	1024 bit	2.8 V		e3
DS1985-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel	16KX1	16K	-40 Cel	Matte Tin (Sn) - annealed	END	O-MEDB-N2		6 V					Not Qualified	1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3					15000 ns
DS28E15Q+U	Analog Devices	EEPROM																											Matte Tin (Sn) - annealed			1							1-WIRE				e3	30	260
DS28CN01U+T	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		5.5	1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel	1KX1	1K	-40 Cel		DUAL	S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E35P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel	1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	1024 bit	2.97 V		e3	30	260		4.29 mm
DS28E01Q-100+U	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel	1KX1	1K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	S-PDSO-N6	1	5.25 V	.8 mm			3 mm		1-WIRE	1024 bit	2.8 V		e3	30	260		3 mm
DS28E05X+T	Analog Devices	EEPROM	INDUSTRIAL	4	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		112 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.4 mm	85 Cel	112X8	112	-40 Cel		BOTTOM	S-PBGA-B4		3.63 V	.37 mm			.908 mm		1-WIRE	896 bit	1.71 V			NOT SPECIFIED	NOT SPECIFIED		.908 mm
DS28E02P+T&R	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel	1KX1	1K	-20 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified	1-WIRE	1024 bit	1.75 V		e3	30	260		3.94 mm
DS28E15G+	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER				3 mm	85 Cel	512X1	512	-40 Cel		BOTTOM	S-XBCC-B2		3.63 V	.8 mm			3.5 mm		1-WIRE	512 bit	2.97 V			NOT SPECIFIED	NOT SPECIFIED		6.5 mm
DS1990AA-F5+	Analog Devices	EEPROM
DS28CN01U+	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	1024 words		5.5	1.8/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel	1KX1	1K	-40 Cel		DUAL	S-PDSO-G8		5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		1024 bit	1.62 V			NOT SPECIFIED	NOT SPECIFIED	.0000055 Amp	3 mm		3
DS28E15G+U	Analog Devices	EEPROM																											NICKEL PALLADIUM GOLD										1-WIRE				e4
DS28E15G+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		512 words		3.3		1	CHIP CARRIER				3 mm	85 Cel	512X1	512	-40 Cel	NICKEL GOLD PALLADIUM	BOTTOM	S-XBCC-B2		3.63 V	.8 mm			3.5 mm		1-WIRE	512 bit	2.97 V						6.5 mm
DS1971-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		5		8	DISK BUTTON					85 Cel	32X8	32	-40 Cel	Matte Tin (Sn) - annealed	END	O-MEDB-N2		6 V			.0163 MHz		Not Qualified	1-WIRE	256 bit	2.8 V	MICROLAN COMPATIBLE	e3
DS28E25Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel	4KX1	4K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	S-PDSO-N6	1	3.63 V	.8 mm			3 mm		1-WIRE	4096 bit	2.97 V		e3	30	260		3 mm
DS28EL15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		512 words		1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel	512X1	512	-40 Cel	Matte Tin (Sn) - annealed	DUAL	S-PDSO-N6	1	1.89 V	.8 mm			3 mm		1-WIRE	512 bit	1.71 V		e3	30	260		3 mm
DS28E35Q+U	Analog Devices	EEPROM																											Matte Tin (Sn) - annealed			1							1-WIRE				e3	30	260
DS1990R-F3#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel	64X1	64	-40 Cel		END	O-MEDB-N2		6 V					Not Qualified	1-WIRE	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS28E22Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		2048 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel	2KX1	2K	-40 Cel	Matte Tin (Sn) - annealed	DUAL	S-PDSO-N6	1	3.63 V	.8 mm			3 mm		1-WIRE	2048 bit	2.97 V		e3	30	260		3 mm
DS28E05GB+T	Analog Devices	EEPROM	INDUSTRIAL	2	BCC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		112 words				8	CHIP CARRIER				2.1 mm	85 Cel	112X8	112	-40 Cel	NICKEL PALLADIUM GOLD	BOTTOM	R-XBCC-B2		3.63 V	.4 mm			3.5 mm		1-WIRE	896 bit	1.71 V		e4				5 mm
DS2431X+UW	Analog Devices	EEPROM																																					1-WIRE
DS1972-F5#A0F	Analog Devices	EEPROM																																					1-WIRE
DS2431GB+TW	Analog Devices	EEPROM																																					1-WIRE
DS28E07+W	Analog Devices	EEPROM																																					1-WIRE
DS1990R-F5+W	Analog Devices	EEPROM																																					1-WIRE
DS1972-F5+A0F	Analog Devices	EEPROM																																					1-WIRE
DS1990A-F3#C00	Analog Devices	EEPROM																																					1-WIRE
DS2431P+TW	Analog Devices	EEPROM																																					1-WIRE
DS2432X+UW	Analog Devices	EEPROM																																					1-WIRE
DS28E07P+W	Analog Devices	EEPROM																																					1-WIRE
DS2433X#UW	Analog Devices	EEPROM																																					1-WIRE
DS2433X-S#TW	Analog Devices	EEPROM																																					1-WIRE
DS2431X-S+TW	Analog Devices	EEPROM																																					1-WIRE
DS2432X-S+TW	Analog Devices	EEPROM																																					1-WIRE

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.