Analog Devices EEPROM 130

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
DS28E22P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		2048 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			2KX1	2K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	2048 bit	2.97 V		e3	30	260		4.29 mm
DS28CN01U-A00+T	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	256 words		2	1.8/5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel			256X4	256	-40 Cel		MATTE TIN	DUAL		S-PDSO-G8	1	5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		1024 bit	1.62 V		e3	30	260	.0000055 Amp	3 mm		3
DS1973-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V			.0163 MHz		Not Qualified	1-WIRE	4096 bit	2.8 V		e3
DS28E04S-100+T	Analog Devices	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified	1-WIRE	4096 bit	2.8 V		e3	30	260		9.9 mm
DS2432P+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified	1-WIRE	1024 bit	2.8 V		e3	30	260		3.94 mm
DS28E01P-100+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-XDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified	1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		3.94 mm
DS2431GB+UW	Analog Devices	EEPROM																																									1-WIRE
DS28E04S-100+	Analog Devices	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		4096 words		3	3/5	1	SMALL OUTLINE	SOP16,.25	EEPROMs		1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-G16	1	5.25 V	1.75 mm	50000 Write/Erase Cycles		3.9 mm	Not Qualified	1-WIRE	4096 bit	2.8 V		e3	30	260		9.9 mm
DS1990R-F5#	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		5		1	DISK BUTTON					85 Cel			64X1	64	-40 Cel			END		O-MEDB-N2		6 V					Not Qualified	1-WIRE	64 bit	2.8 V			NOT SPECIFIED	NOT SPECIFIED
DS28CN01U-A00+	Analog Devices	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.5 mA	256 words		2	1.8/5	4	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel			256X4	256	-40 Cel		MATTE TIN	DUAL		S-PDSO-G8	1	5.5 V	1.1 mm	200000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified		1024 bit	1.62 V		e3	30	260	.0000055 Amp	3 mm		3
DS28E01-100+	Analog Devices	EEPROM	INDUSTRIAL	2		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	CYLINDRICAL	SIP2/3,.1,50	EEPROMs	40		85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM		R-XBCY-T2		5.25 V		50000 Write/Erase Cycles			Not Qualified	1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3		250
DS28E25P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	4096 bit	2.97 V		e3	30	260		4.29 mm
DS1990A-F5+A0A	Analog Devices	EEPROM																																									1-WIRE					NOT SPECIFIED	NOT SPECIFIED
DS1990A-F5#A0A	Analog Devices	EEPROM																																									1-WIRE
DS28E15P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		512 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	512 bit	2.97 V		e3	30	260		4.29 mm
DS28E15Q+T	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		512 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel			512X1	512	-40 Cel		Matte Tin (Sn) - annealed	DUAL		S-PDSO-N6	1	3.63 V	.8 mm			3 mm		1-WIRE	512 bit	2.97 V		e3	30	260		3 mm
DS2433-Z01	Analog Devices	EEPROM	INDUSTRIAL	3		ROUND	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5		8	CYLINDRICAL					85 Cel			512X8	512	-40 Cel		TIN LEAD	BOTTOM		O-PBCY-T3		6 V					Not Qualified	1-WIRE	4096 bit	2.8 V		e0
DS2432P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN	DUAL		R-PDSO-C6	1	5.25 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified	1-WIRE	1024 bit	2.8 V		e3	30	260		3.94 mm
DS2432P-100-011+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	C BEND	SERIAL			256 words			3/5	4	SMALL OUTLINE	SOC6,.17	EEPROMs	10	1.27 mm	85 Cel			256X4	256	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1			50000 Write/Erase Cycles			Not Qualified		1024 bit			e3	30	260
DS28E05P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		64 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	64 bit	2.75 V		e3	30	260		4.29 mm
DS2431X+U	Analog Devices	EEPROM	INDUSTRIAL	6	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		256 words		3.3	3/5	4	GRID ARRAY	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	256X4	256	-40 Cel	NO	TIN SILVER COPPER NICKEL	BOTTOM	HARDWARE	R-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified	1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e2	30	260		1.68 mm			NO
DS28E05P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		64 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	64 bit	2.75 V		e3	30	260		4.29 mm
DS28E05R+U	Analog Devices	EEPROM	INDUSTRIAL	3	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.4 mA	64 words		3.3	3/3.3	1	SMALL OUTLINE	TO-236	EEPROMs	10	.95 mm	85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-G3	1	3.63 V	1.12 mm	1000 Write/Erase Cycles		1.3 mm	Not Qualified	1-WIRE	64 bit	2.97 V		e3	30	260		2.92 mm
DS1973-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		512 words				8	DISK BUTTON					85 Cel			512X8	512	-40 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V			.0163 MHz		Not Qualified	1-WIRE	4096 bit	2.8 V		e3
DS28E25+T	Analog Devices	EEPROM																														Matte Tin (Sn) - annealed											1-WIRE				e3		250
DS28E25G+T	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS	BUTT	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	CHIP CARRIER, VERY THIN PROFILE					85 Cel			4KX1	4K	-40 Cel		NICKEL GOLD PALLADIUM	BOTTOM		S-XBCC-B2		3.63 V	1 mm			6 mm		1-WIRE	4096 bit	2.97 V						6 mm
DS2704W	Analog Devices	EEPROM	COMMERCIAL EXTENDED		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		128 words				8	UNCASED CHIP					85 Cel			128X8	128	-30 Cel		TIN LEAD	UPPER		X-XUUC-N		5.5 V					Not Qualified	1-WIRE	1024 bit	2.5 V		e0
DS2704G+	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37	EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed	DUAL	SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified	1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS25LV02R+U	Analog Devices	EEPROM	OTHER	5	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	ASYNCHRONOUS		128 words	COMMON	2.5	2.5/5	8	SMALL OUTLINE	TSOP5/6,.11,37	Other Memory ICs		.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-G5	1	5.5 V					Not Qualified	1-WIRE	1024 bit	2.2 V		e3					15000 ns
DS2704G+T&R	Analog Devices	EEPROM	COMMERCIAL EXTENDED	6	SON	SQUARE	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS	.75 mA	128 words			3/5	8	SMALL OUTLINE	SOLCC6,.11,37	EEPROMs	10	.95 mm	85 Cel			128X8	128	-30 Cel		Matte Tin (Sn) - annealed	DUAL	SOFTWARE	S-XDSO-N6	1	5.5 V		50000 Write/Erase Cycles			Not Qualified	1-WIRE	1024 bit	2.5 V		e3	30	260	.000002 Amp
DS28E35P+T	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	1024 bit	2.97 V		e3	30	260		4.29 mm
DS28E25+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	CYLINDRICAL					85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	BOTTOM		O-XBCY-T2		3.63 V						1-WIRE	4096 bit	2.97 V		e3		250
DS28E25P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		4096 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel			4KX1	4K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.63 V	1.5 mm			3.94 mm		1-WIRE	4096 bit	2.97 V		e3	30	260		4.29 mm
DS28E01X-100-S	Analog Devices	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS		1024 words				1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD	BOTTOM		R-PBGA-B6		5.25 V	.67 mm			1.75 mm	Not Qualified	1-WIRE	1024 bit	2.8 V		e0				1.98 mm
DS1985-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		16384 words	COMMON	5	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			16KX1	16K	-40 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V					Not Qualified	1-WIRE	16384 bit	2.8 V	MICROLAN COMPATIBLE	e3					15000 ns
DS1990AA-F3+	Analog Devices	EEPROM
DS1961S-F3+	Analog Devices	EEPROM	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words				1	DISK BUTTON					85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		5.25 V					Not Qualified	1-WIRE	1024 bit	2.8 V		e3
DS28E02Q+T&R	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37	EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	DUAL		S-PDSO-N6	1	3.65 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified	1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS1972-F5+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		5	3/5	1	DISK BUTTON	BUTTON,.68IN	EEPROMs	10		85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		5.25 V		50000 Write/Erase Cycles			Not Qualified	1-WIRE	1024 bit	2.8 V		e3
DS28E25Q+U	Analog Devices	EEPROM																														Matte Tin (Sn) - annealed				1							1-WIRE				e3	30	260
DS28E22Q+U	Analog Devices	EEPROM																														Matte Tin (Sn) - annealed				1							1-WIRE				e3	30	260
DS1990A-F3+	Analog Devices	EEPROM	INDUSTRIAL	2		ROUND	METAL	YES	1	MOS	NO LEAD	SERIAL	ASYNCHRONOUS		64 words		3.3	3/5	1	DISK BUTTON	BUTTON,.68IN	Other Memory ICs			85 Cel			64X1	64	-40 Cel		Matte Tin (Sn) - annealed	END		O-MEDB-N2		6 V					Not Qualified	1-WIRE	64 bit	2.8 V		e3					15000 ns
DS2431X-105-00+T	Analog Devices	EEPROM																														TIN SILVER COPPER NICKEL				1							1-WIRE				e2	30	260
DS28E02P+	Analog Devices	EEPROM	OTHER	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	C BEND	SERIAL	ASYNCHRONOUS		1024 words		1.8	1.8/3.3	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-C6	1	3.65 V	1.5 mm	50000 Write/Erase Cycles		3.76 mm	Not Qualified	1-WIRE	1024 bit	1.75 V		e3	30	260		3.94 mm
DS28EL15Q+U	Analog Devices	EEPROM																														Matte Tin (Sn) - annealed				1							1-WIRE				e3	30	260
DS28E35Q+T	Analog Devices	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words		3.3		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		R-PDSO-N8	1	3.63 V	.8 mm			2 mm		1-WIRE	1024 bit	2.97 V		e3	30	260		3 mm
DS28E02Q+U	Analog Devices	EEPROM	OTHER	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		1024 words		1.8		1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.95 mm	85 Cel			1KX1	1K	-20 Cel		Matte Tin (Sn) - annealed	DUAL		S-PDSO-N6	1	3.65 V	.8 mm			3 mm		1-WIRE	1024 bit	1.75 V		e3	30	260		3 mm
DS28E01Q-100+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		1024 words			3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37	EEPROMs	40	.95 mm	85 Cel			1KX1	1K	-40 Cel		Matte Tin (Sn) - annealed	DUAL		S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified	1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS	e3	30	260		3 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.