Renesas Electronics EEPROM 899

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
HN58X2504TIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	4096 bit	1.8 V							4.4 mm
X28C512D-90	Renesas Electronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO				DUAL		R-XDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
R1EV58064BDANBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	3			8	IN-LINE				2.54 mm	85 Cel			8KX8	8K	-40 Cel					DUAL		R-PDIP-T28	1	5.5 V	5.7 mm			15.24 mm		10 ms		65536 bit	2.7 V							35.6 mm	100 ns	3
HN58X2404ST	Renesas Electronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	70 Cel			512X8	512	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	1.8 V	10 YEAR DATA RETENTION						4.4 mm
HN58V65ATI-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel			8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDSO-G28	1	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		65536 bit	2.7 V		64				.000005 Amp	11.8 mm	100 ns	3	YES
UPD28C64C-25	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V					Not Qualified	10 ms		65536 bit	4.5 V		32	e0			.0001 Amp		250 ns		YES
X28C513JZ-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
HN58X24256FPI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.5			8	SMALL OUTLINE			10	1.27 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.73 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	262144 bit	1.8 V	100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE		e0				4.9 mm
X28C512KI-15	Renesas Electronics	EEPROM	INDUSTRIAL	36	PGA	SQUARE	CERAMIC	NO		CMOS		PIN/PEG	PARALLEL		50 mA	65536 words	5	YES	5	8	GRID ARRAY	PGA36,7X7	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO				PERPENDICULAR		S-XPGA-P36				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		150 ns		YES
HN58V1001P-20	Renesas Electronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE				2.54 mm	70 Cel			128KX8	128K	0 Cel		TIN LEAD			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	2.7 V			e0				41.9 mm	200 ns	3
X28C512JZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
HN58C257AT-10E	Renesas Electronics	EEPROM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	EEPROMs		.5 mm	70 Cel			32KX8	32K	0 Cel	NO			YES	DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		262144 bit	4.5 V		64		20	260	.00002 Amp	12.4 mm	100 ns	5	YES
X28C512JIZ-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C512TI-20	Renesas Electronics	EEPROM	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	EEPROMs		.5 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		200 ns		YES
X28C512D-20	Renesas Electronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	70 Cel			64KX8	64K	0 Cel	NO				DUAL		R-XDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		200 ns		YES
X28C010FMB-12C7729	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		131072 words	5			8	FLATPACK				1.27 mm	125 Cel			128KX8	128K	-55 Cel					DUAL		R-CDFP-F32		5.5 V	3.05 mm			10.93 mm		10 ms		1048576 bit	4.5 V	LG_MAX						21.08 mm	120 ns	5
HN58C256AP-10E	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			32KX8	32K	0 Cel	NO				DUAL		R-PDIP-T28	1	5.5 V	5.7 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		262144 bit	4.5 V		64				.00002 Amp	35.6 mm	100 ns	5	YES
X28C512J-12	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
X28C010FMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	FLATPACK	FL32,.4		100	1.27 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel					DUAL		R-CDFP-F32		5.5 V	3.05 mm	100000 Write/Erase Cycles		10.93 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	21.08 mm	120 ns	5	YES
HN58V1001FP-25	Renesas Electronics	EEPROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	3	YES	3/5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO			YES	DUAL		R-PDSO-G32	1	5.5 V	3 mm			11.3 mm	Not Qualified	15 ms		1048576 bit	2.7 V		128				.00002 Amp	20.45 mm	250 ns	3	YES
X28C512DI-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO				DUAL		R-CDIP-T32		5.5 V	5.9 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		524288 bit	4.5 V	LG_MAX					.0005 Amp	42.95 mm	120 ns	5	YES
HN58V66API-10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel			8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDIP-T28		5.5 V	5.7 mm			15.24 mm	Not Qualified	10 ms		65536 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	35.6 mm	100 ns	3	YES
X28C010DI-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	85 Cel	NO	3-STATE	128KX8	128K	-40 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
HN58C256FP-15	Renesas Electronics	EEPROM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm				32KX8	32K			TIN LEAD			DUAL		R-PDSO-G28			3 mm			8.4 mm	Not Qualified			262144 bit				e0				18.3 mm	150 ns	5
IDT78C18A100L	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		125 mA	2048 words	5	NO	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs		1.27 mm	70 Cel			2KX8	2K	0 Cel	YES	TIN LEAD			QUAD		R-XQCC-N32							Not Qualified			16384 bit				e0			.0009 Amp		100 ns		YES
UPD28C05C-25	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	512 words	5	NO	5	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel			512X8	512	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T24		5.5 V					Not Qualified			4096 bit	4.5 V			e0			.0001 Amp		250 ns		YES
X28C010D-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
HN58C256AT-85E	Renesas Electronics	EEPROM	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs		.5 mm	70 Cel			32KX8	32K	0 Cel	NO				DUAL		R-PDSO-G28	3	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	4.5 V		64		20	260	.00002 Amp	11.8 mm	85 ns	5	YES
HN85C256ATI10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE, THIN PROFILE				.55 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm		10 ms		262144 bit	4.5 V							11.8 mm	100 ns	5
X28C513EMB-25	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				QUAD		R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	90 ns	5	YES
HN58X2464TIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	10	.65 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	15 ms	I2C	65536 bit	1.8 V						.000003 Amp	4.4 mm
HN58X25512TI	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		65536 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			64KX8	64K	-40 Cel					DUAL		R-PDSO-G14		5.5 V	1.1 mm		5 MHz	4.4 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V							5 mm
X55621V20I-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	85 Cel			32KX8	32K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified		SPI	262144 bit							.000001 Amp
HN58C256AFPI85EZ	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		30 mA	32768 words	5	YES	5	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel			32KX8	32K	-40 Cel	NO				DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64				.00002 Amp		85 ns		YES
HN85C256AFPI85E	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	2.5 mm			8.4 mm		10 ms		262144 bit	4.5 V							18.3 mm	85 ns	5
X5043M8-2.7T1	Renesas Electronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	512 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	100	.635 mm	70 Cel			512X8	512	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		SPI	4096 bit							.00001 Amp
HN58X2416FP	Renesas Electronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words				8	SMALL OUTLINE			10	1.27 mm	70 Cel			2KX8	2K	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	16384 bit	1.8 V	10 YEARS DATA RETENTION						4.89 mm
HN58X2432STI	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			4KX8	4K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	15 ms	I2C	32768 bit	1.8 V			e0				4.4 mm
X28C513JIZ-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
HN58X2432SFPIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			4KX8	4K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.89 mm
R1EV58256BSCNBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	3	5.5 V	2.5 mm			8.4 mm		10 ms		262144 bit	2.7 V							18.3 mm	120 ns	3
X28C512R-20	Renesas Electronics	EEPROM	COMMERCIAL	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	70 Cel			64KX8	64K	0 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		200 ns		YES
X28C010N-20	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO				QUAD		R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		200 ns		YES
R1EV58256BTDRBI#B0	Renesas Electronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G32	3	5.5 V	1.2 mm			8 mm		10 ms		262144 bit	2.7 V							12.4 mm	120 ns	3
X28C512PI-90	Renesas Electronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	65536 words	5	YES	5	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-PDIP-T32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
X28C010DMB-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	150 ns	5	YES
X28C512RMB-20	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		200 ns		YES
HN58X2532FPIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			4KX8	4K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		3 MHz	3.9 mm	Not Qualified	8 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.