Renesas Electronics EEPROM 899

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
X28C512JM-90	Renesas Electronics	EEPROM	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL		50 mA	65536 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO				QUAD		R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		90 ns		YES
HN58C256FP-20T	Renesas Electronics	EEPROM		28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm				32KX8	32K			TIN LEAD			DUAL		R-PDSO-G28			3 mm			8.4 mm	Not Qualified			262144 bit				e0				18.3 mm	200 ns	5
R1EV58064BSCNBI#S0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL		R-PDSO-G28	3	5.5 V	2.5 mm			8.4 mm		10 ms		65536 bit	2.7 V							18.3 mm	100 ns	3
X28C512RI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS		GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		150 ns		YES
HN58X2404T	Renesas Electronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	70 Cel			512X8	512	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	15 ms	I2C	4096 bit	1.8 V	10 YEARS DATA RETENTION						4.4 mm
HN58X2408SFPI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			1KX8	1K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	8192 bit	1.8 V			e0				4.89 mm
HN85C256API10E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDIP-T28		5.5 V	5.7 mm			15.24 mm		10 ms		262144 bit	4.5 V							35.6 mm	100 ns	5
X28C512FMB-12	Renesas Electronics	EEPROM		32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	FLATPACK	FL32,.4		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				DUAL		R-CDFP-F32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.055 mm		10 ms		524288 bit	4.5 V	LG_MAX					.0005 Amp	21.08 mm	120 ns	5	YES
X28C513J-12T1	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	120 ns	5	YES
HN58X2408FPIAGE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	8192 bit	1.8 V							4.89 mm
HN58C256FP-20	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE			10	1.27 mm	70 Cel			32KX8	32K	0 Cel		TIN LEAD			DUAL		R-PDSO-G28		5.5 V	2.5 mm			8.4 mm	Not Qualified			262144 bit	4.5 V	100K ERASE/WRITE CYCLES; DATA RETENTION 10 YEARS		e0				18.3 mm	200 ns	5
HN58X2408FPIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1024 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			1KX8	1K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	8192 bit	1.8 V			e0				4.9 mm
X28C513JI-15	Renesas Electronics	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		10	1.27 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel	NO				QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		13.97 mm		10 ms		524288 bit	4.5 V						.0005 Amp	11.43 mm	150 ns	5	YES
X28C512FI-15	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-XDFP-F32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		150 ns		YES
HN58X2504TIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	4096 bit	1.8 V							4.4 mm
X55621V20-2.7	Renesas Electronics	EEPROM	COMMERCIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	SERIAL		3 mA	32768 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP20,.25	EEPROMs	100	.635 mm	70 Cel			32KX8	32K	0 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G20				1000000 Write/Erase Cycles			Not Qualified		SPI	262144 bit							.000001 Amp
UPD28C256CZ-25	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE	PARALLEL		50 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	70 Cel			32KX8	32K	0 Cel	NO	Tin/Lead (Sn/Pb)			DUAL		R-PDIP-T28				10000 Write/Erase Cycles			Not Qualified	10 ms		262144 bit			64	e0			.0001 Amp		250 ns		YES
HN58X2504TI	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		512 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			512X8	512	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	4096 bit	1.8 V			e0				4.4 mm
HN58V256AT-12	Renesas Electronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	70 Cel			32KX8	32K	0 Cel	NO				DUAL		R-PDSO-G28	1	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	10 ms		262144 bit	2.7 V		64				.00002 Amp	11.8 mm	120 ns	3	YES
HN58V257AT-12E	Renesas Electronics	EEPROM	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	3	YES	3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.56,20	EEPROMs		.5 mm	70 Cel			32KX8	32K	0 Cel	NO			YES	DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified	10 ms		262144 bit	2.7 V		64		NOT SPECIFIED	NOT SPECIFIED	.00002 Amp	12.4 mm	120 ns	3	YES
X28C010N-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD	PARALLEL		50 mA	131072 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.7	EEPROMs		1.27 mm	70 Cel			128KX8	128K	0 Cel	NO				QUAD		R-XQCC-N32							Not Qualified			1048576 bit			256				.0005 Amp		120 ns		YES
HN58X2404SFPIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			512X8	512	-40 Cel			1010DDMR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.73 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	4096 bit	1.8 V				20	260	.000003 Amp	4.89 mm
HN58C65PI-25	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE					85 Cel			8KX8	8K	-40 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V					Not Qualified			65536 bit	4.5 V			e0					250 ns	5
X28C010FM-25	Renesas Electronics	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	125 Cel			128KX8	128K	-55 Cel	NO				DUAL		R-XDFP-F32							Not Qualified			1048576 bit			256				.0005 Amp		250 ns		YES
HN58V256AP-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	3			8	IN-LINE				2.54 mm	70 Cel			32KX8	32K	0 Cel		TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.7 mm			15.24 mm	Not Qualified			262144 bit	2.7 V			e0				35.6 mm	120 ns	3
SPD5108-Y1B000NCG	Renesas Electronics	EEPROM
X28C512FI-20	Renesas Electronics	EEPROM	INDUSTRIAL	32	DFP	RECTANGULAR	CERAMIC	YES		CMOS		FLAT	PARALLEL		50 mA	65536 words	5	YES	5	8	FLATPACK	FL32,.5	EEPROMs		1.27 mm	85 Cel			64KX8	64K	-40 Cel	NO				DUAL		R-XDFP-F32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		200 ns		YES
X28C512DM	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				DUAL		R-CDIP-T32		5.5 V	5.9 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		524288 bit	4.5 V	LG_MAX					.0005 Amp	42.95 mm	90 ns	5	YES
HN58V66API-10	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	8192 words	3.6	YES	3/5	8	IN-LINE	DIP28,.6	EEPROMs		2.54 mm	85 Cel			8KX8	8K	-40 Cel	NO			YES	DUAL		R-PDIP-T28	1	5.5 V	5.7 mm			15.24 mm	Not Qualified	10 ms		65536 bit	2.7 V		64				.000005 Amp	35.6 mm	100 ns	3	YES
X28C010K-25	Renesas Electronics	EEPROM		36	PGA	SQUARE	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		PIN/PEG	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	GRID ARRAY	PGA36,7X7		100	2.54 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel					PERPENDICULAR		S-CPGA-P36		5.5 V	4.88 mm	100000 Write/Erase Cycles		19.305 mm		10 ms		1048576 bit	4.5 V		256				.0005 Amp	19.305 mm	250 ns	5	YES
HN58X2516TIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2048 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	16384 bit	1.8 V							4.4 mm
HN58X2564FPIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		3 MHz	3.9 mm	Not Qualified	8 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm
X28C512D-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	IN-LINE	DIP32,.6		10	2.54 mm	70 Cel		3-STATE	64KX8	64K	0 Cel	NO				DUAL		R-CDIP-T32		5.5 V	5.9 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		524288 bit	4.5 V	LG_MAX					.0005 Amp	42.95 mm	150 ns	5	YES
HN58X2564FPIAG	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		8192 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			8KX8	8K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		3 MHz	3.9 mm	Not Qualified	8 ms	SPI	65536 bit	1.8 V							4.89 mm
HN58X24512FPI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	10	1.27 mm	85 Cel			64KX8	64K	-40 Cel		TIN LEAD	1010XDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	2 mm	100000 Write/Erase Cycles	1 MHz	5.3 mm	Not Qualified	15 ms	I2C	524288 bit	1.8 V			e0			.000003 Amp	6.05 mm
X28C513EM-15	Renesas Electronics	EEPROM		32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	5	YES		8	CHIP CARRIER	LCC32,.45X.55		10	1.27 mm	125 Cel		3-STATE	64KX8	64K	-55 Cel	NO				QUAD		R-CQCC-N32		5.5 V	3.05 mm	100000 Write/Erase Cycles		11.425 mm		10 ms		524288 bit	4.5 V						.0005 Amp	13.965 mm	150 ns	5	YES
HN58X2532TI	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			4KX8	4K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.1 mm		3 MHz	3 mm	Not Qualified	8 ms	SPI	32768 bit	1.8 V			e0				4.4 mm
HN58X2502FPI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		256 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			256X8	256	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.73 mm		3 MHz	3.9 mm	Not Qualified	8 ms	SPI	2048 bit	1.8 V			e0				4.89 mm
X28C010D-15	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	70 Cel	NO	3-STATE	128KX8	128K	0 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	150 ns	5	YES
X28C010DM-12	Renesas Electronics	EEPROM		32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	IN-LINE	DIP32,.6		100	2.54 mm	125 Cel	NO	3-STATE	128KX8	128K	-55 Cel					DUAL		R-CDIP-T32		5.5 V	5.92 mm	100000 Write/Erase Cycles		15.24 mm		10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp	42.95 mm	120 ns	5	YES
HN58X24128FPIE	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.89 mm
HN85C256API85E	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDIP-T28		5.5 V	5.7 mm			15.24 mm		10 ms		262144 bit	4.5 V							35.6 mm	85 ns	5
R1EV58256BSCNBI#S0	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G28	3	5.5 V	2.5 mm			8.4 mm		10 ms		262144 bit	2.7 V							18.3 mm	120 ns	3
X28C512RMB-25	Renesas Electronics	EEPROM	MILITARY	32	SOP	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	GULL WING	PARALLEL		50 mA	65536 words	5	YES	5	8	SMALL OUTLINE	SOP32,.56	EEPROMs		1.27 mm	125 Cel			64KX8	64K	-55 Cel	NO				DUAL		R-XDSO-G32				100000 Write/Erase Cycles			Not Qualified	10 ms		524288 bit			128				.0005 Amp		250 ns		YES
UPD454D	Renesas Electronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE	PARALLEL			256 words		NO	5,12	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel			256X8	256	-10 Cel	NO	Tin/Lead (Sn/Pb)			DUAL		R-XDIP-T24							Not Qualified			2048 bit				e0					800 ns		NO
HN58V1001P-25	Renesas Electronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	3			8	IN-LINE			10	2.54 mm	70 Cel			128KX8	128K	0 Cel		TIN LEAD			DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified	15 ms		1048576 bit	2.7 V	10000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION; 128 BYTE PAGE WRITE		e0				41.9 mm	250 ns	3
HN58X2432FP	Renesas Electronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words				8	SMALL OUTLINE				1.27 mm	70 Cel			4KX8	4K	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	15 ms	I2C	32768 bit	1.8 V							5.02 mm	900 ns
HN58X24256ASTI	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		32768 words				8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			32KX8	32K	-40 Cel					DUAL		R-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V							4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.