Renesas Electronics EEPROM 899

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
R1EX24128ATAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.000002 Amp
R1EX24512ASAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words	2.5			8	SMALL OUTLINE				1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V			e4				4.89 mm
R1EX25512ASA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.89 mm
X28HC256JZ-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel			32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
R1EX24064ATAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3			.000002 Amp	4.4 mm
R1EX25004ATA00I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			512X8	512	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	4096 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
R1EX24004ASAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX25002ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel				DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X25045S-2.7	Renesas Electronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			512X8	512	0 Cel				DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET						4.89 mm
R1EX24256BTAS0A#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel			32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000002 Amp
X28HC64SIZ-70	Renesas Electronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL		R-PDSO-G28	3	5.5 V	2.65 mm			7.5 mm		5 ms		65536 bit	4.5 V			e3				17.9 mm	70 ns	5
R1EX24016ASAS0I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3			8	SMALL OUTLINE				1.27 mm	85 Cel			2KX8	2K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm		5 ms	I2C	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm
X28HC64JZ-70	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel			8KX8	8K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V			e3	30	245		13.97 mm	70 ns	5
R1EX24512BTAS0I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V	IT IS ALSO OPERATES IN 0.4MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24032ASAS0I#S0	Renesas Electronics	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V			e3			.000002 Amp	4.89 mm		2.7
R1EX24008ATAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1048576 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel			1MX8	1M	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8388608 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HT010W	Renesas Electronics	EEPROM			DIE	UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	5	YES		8	UNCASED CHIP	DIE OR CHIP		100		175 Cel	NO	3-STATE	128KX8	128K	-40 Cel				UPPER		X-XUUC-N		5.5 V		100000 Write/Erase Cycles				10 ms		1048576 bit	4.5 V	LG_MAX	256				.0005 Amp			5	YES
R1EX24002ATAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4			.000002 Amp	4.4 mm
R1EX25002ASA00G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	3.6		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	105 Cel			256X8	256	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
X25043P-2.7	Renesas Electronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	70 Cel			512X8	512	0 Cel				DUAL		R-PDIP-T8		5.5 V	4.32 mm		1 MHz	7.62 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						10.03 mm
X28HC64JIZ-70T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel			8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	70 ns	5	YES
R1EX24032ASAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	2.7			8	SMALL OUTLINE				1.27 mm	85 Cel			4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm		5 ms	I2C	32768 bit	1.8 V			e4				4.89 mm
R1EX24512BTAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION, ALSO OPERATES WITH 2.5 V TO 5.5 V SUPPLY			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24256ATB00A	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.7			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			32KX8	32K	-40 Cel				DUAL		R-PDSO-G14	1	5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V				20	260		5 mm
R1EX25016ASA00G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.6			16	SMALL OUTLINE				1.27 mm	105 Cel			2KX8	2K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		3 MHz	3.9 mm		5 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EX24016ATAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e3			.000002 Amp	4.4 mm
R1EX25002ATA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC64W	Renesas Electronics	EEPROM	COMMERCIAL		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	5			8	UNCASED CHIP					70 Cel			8KX8	8K	0 Cel		MATTE TIN		UPPER		R-XUUC-N		5.5 V					Not Qualified	5 ms		65536 bit	4.5 V			e3						5
X25043S	Renesas Electronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel			512X8	512	0 Cel				DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						4.89 mm
R1EX24002ATAS0I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V			e4			.000002 Amp	4.4 mm
R1EX25004ASA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24064ATAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel			8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24008ATAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24008ATAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24016ATAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24064ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC64J-12T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	70 Cel			8KX8	8K	0 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	5	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0		225	.0002 Amp	13.97 mm	120 ns	5	YES
R1EX24008ATA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC256JIZ-90T13	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
R1EX24256BTAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel			32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V					260	.000002 Amp	4.4 mm
R1EX25016ATA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			2KX8	2K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	16384 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
R1EX24128BSAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	100 YEAR DATA RETENTION			NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm	900 ns
R1EX24256BTAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel			32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC256PZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel			32KX8	32K	0 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		262144 bit	4.5 V			e3				37.4 mm	120 ns	5
R1EX24512BSAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	105 Cel			64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V					260	.000002 Amp	4.89 mm
X28HC256JIZ-90T	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	5	YES		8	CHIP CARRIER	LDCC32,.5X.6		100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN		QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm		5 ms		262144 bit	4.5 V		128	e3			.0005 Amp	13.97 mm	90 ns	5	YES
R1EX24256BSASOI	Renesas Electronics	EEPROM		8		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									SMALL OUTLINE														DUAL		R-PDSO-G8							Not Qualified		I2C
R1EX25512ATA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	65536 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel			64KX8	64K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	524288 bit							.000005 Amp

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.