Renesas Electronics EEPROM 899

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
R1EX25016ATA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	8 ms	SPI	16384 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000003 Amp	4.4 mm
R1EX25512ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	64KX8	64K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.89 mm
X25043SI	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE				1.27 mm	85 Cel	512X8	512	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.75 mm		1 MHz	3.9 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						4.89 mm
R1EX24008ATAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000002 Amp
R1EX24256BSAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000002 Amp
R1EX24256BTAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V		1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit	1.8 V						.000002 Amp
R1EX24016ATA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	2KX8	2K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000002 Amp
X28HC256JZ-15	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
R1EX24128BSAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX25004ATA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	512X8	512	-40 Cel		MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY		e3			.000002 Amp	4.4 mm
X25043PI	Renesas Electronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	85 Cel	512X8	512	-40 Cel				DUAL		R-PDIP-T8		5.5 V	4.32 mm		1 MHz	7.62 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						10.03 mm
R1EX24256BTAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V					260	.000002 Amp	4.4 mm
R1EX24032ATA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	4096 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit							.000002 Amp
R1EX24016ASA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	2KX8	2K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000002 Amp
R1EX24128BTAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V					260	.000002 Amp	4.4 mm
R1EX24128BSAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V					260	.000002 Amp	4.89 mm
R1EX24064ASAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V					260	.000002 Amp	4.89 mm
R1EX24256ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.7			8	SMALL OUTLINE				1.27 mm	85 Cel	32KX8	32K	-40 Cel				DUAL		R-PDSO-G8	1	5.5 V	1.73 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V				20	260		4.89 mm
X28HC256JI-12T	Renesas Electronics	EEPROM																																																				5
X28HC256JZ-90T	Renesas Electronics	EEPROM																												MATTE TIN																		e3						5
R1EX24008ASAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	1024 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	8192 bit							.000002 Amp
X28HC256JZ-15T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	150 ns	5
R1EX25004ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	512X8	512	-40 Cel				DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	5 ms	SPI	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24016ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000002 Amp
X28HC64J-90	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	8KX8	8K	0 Cel				QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		65536 bit	4.5 V							13.97 mm	90 ns	5
R1EX24064ATA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V			e3			.000002 Amp	4.4 mm
R1EX24128BSAS0G#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words				8	SMALL OUTLINE				1.27 mm	105 Cel	16KX8	16K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm		5 ms	I2C	131072 bit	1.8 V							4.89 mm
X28HC256PZ-15	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		262144 bit	4.5 V			e3				37.4 mm	150 ns	5
R1EX25016ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.6			8	SMALL OUTLINE				1.27 mm	85 Cel	2KX8	2K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		5 MHz	3.9 mm		5 ms	SPI	16384 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EX24128ATA00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.000002 Amp
R1EX24512BSAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX25032ATA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel	4KX8	4K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	32768 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
X28HC256JZ-12	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
R1EX24008ATAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	10	.65 mm	85 Cel	1KX8	1K	-40 Cel		MATTE TIN	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.1 mm	100000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V			e3			.000002 Amp	4.4 mm		3.3
R1EX24064ATAS0I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V					260	.000002 Amp	4.4 mm
X25043PI-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	85 Cel	512X8	512	-40 Cel				DUAL		R-PDIP-T8		5.5 V	4.32 mm		1 MHz	7.62 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						10.03 mm
R1EX24128BTAS0I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V					260	.000002 Amp	4.4 mm
R1EX24128BSAS0I#K0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	3.3		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24128ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.7			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			10	.65 mm	85 Cel	16KX8	16K	-40 Cel				DUAL		R-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	1000000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION			20	260		4.4 mm
R1EX24016ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	2KX8	2K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC64SZ-70	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	8KX8	8K	0 Cel		MATTE TIN		DUAL		R-PDSO-G28	3	5.5 V	2.65 mm			7.5 mm		5 ms		65536 bit	4.5 V			e3				17.9 mm	70 ns	5
X28HC256PIZ-90	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel	32KX8	32K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		262144 bit	4.5 V			e3				37.4 mm	90 ns	5
X28HC256SZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel	32KX8	32K	0 Cel		MATTE TIN		DUAL		R-PDSO-G28	3	5.5 V	2.65 mm			7.5 mm		5 ms		262144 bit	4.5 V			e3	30	260		17.9 mm	120 ns	5
X25045PI-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5			8	IN-LINE				2.54 mm	85 Cel	512X8	512	-40 Cel				DUAL		R-PDIP-T8		5.5 V	4.32 mm		1 MHz	7.62 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET						10.03 mm
X28HC64JI-12T1	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	100	1.27 mm	85 Cel	8KX8	8K	-40 Cel	NO	TIN LEAD		QUAD		R-PQCC-J32	5	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION	64	e0			.0002 Amp	13.97 mm	120 ns	5	YES
X25043V	Renesas Electronics	EEPROM	COMMERCIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	70 Cel	512X8	512	0 Cel				DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	4.5 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE LOW RESET						5 mm
R1EX24004ATAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel	512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24002ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel	256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.