Renesas Electronics EEPROM 899

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
R1EX24032ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	4096 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24004ATAS0A#S0	Renesas Electronics	EEPROM																																										I2C						NOT SPECIFIED	NOT SPECIFIED
R1EX24016ATAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24016ATA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	2048 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit							.000002 Amp
R1EX24128ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		16384 words	2.7			8	SMALL OUTLINE			10	1.27 mm	85 Cel		16KX8	16K	-40 Cel				DUAL		R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V	1000000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION			20	260		4.89 mm
R1EX24256BTAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	32768 words			2/5	8	SMALL OUTLINE	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000002 Amp
X28HC64PZ-90	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5			8	IN-LINE				2.54 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		65536 bit	4.5 V			e3				37.4 mm	90 ns	5
R1EX25016ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.4 mm
R1EX24256ATB00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words	2.7			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		R-PDSO-G8		5.5 V	1.1 mm		.4 MHz	4.4 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4				5 mm
R1EX24256ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V						.000002 Amp	4.89 mm
R1EX25064ATA00I#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		8192 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		8KX8	8K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	65536 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
R1EX25032ATA00G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	4096 words	3.6		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel		4KX8	4K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24002ASAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	256 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		256X8	256	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX25008ATA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	3.6			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1KX8	1K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.1 mm		5 MHz	3 mm		5 ms	SPI	8192 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.4 mm
R1EX24256BSASOA	Renesas Electronics	EEPROM		8		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									SMALL OUTLINE													DUAL		R-PDSO-G8							Not Qualified		I2C
R1EX25016ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		4.89 mm
R1EX25064ATA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24128ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24512BTAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel		64KX8	64K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V					260	.000002 Amp	4.4 mm
R1EX24004ATAS0G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	3.3		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	20	.65 mm	105 Cel		512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX25064ATA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	3 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
R1EX24256ATB00A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP14,.25	EEPROMs	100	.635 mm	85 Cel		32KX8	32K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	262144 bit							.000002 Amp
X28HC64JI-90T2	Renesas Electronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	85 Cel		8KX8	8K	-40 Cel				QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.43 mm	Not Qualified			65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	90 ns	5
X28HC256PIZ-15	Renesas Electronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	85 Cel		32KX8	32K	-40 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		262144 bit	4.5 V			e3				37.4 mm	150 ns	5
R1EX24256BSAS0G#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		32768 words				8	SMALL OUTLINE				1.27 mm	105 Cel		32KX8	32K	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		.4 MHz	3.9 mm		5 ms	I2C	262144 bit	1.8 V							4.89 mm
R1EX24128BTAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC256J-12T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel				QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	120 ns	5
R1EX24008ASAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		1KX8	1K	-40 Cel			1010DMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
X28HC64JZ-70T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm	1000000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms		65536 bit	4.5 V		64	e3	30	245	.0002 Amp	13.97 mm	70 ns	5	YES
R1EX24064ASA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24128ATAS0A#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	16384 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.635 mm	85 Cel		16KX8	16K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	131072 bit							.000002 Amp
R1EX24032ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	4096 words			2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit							.000002 Amp
R1EX24256BTASOI	Renesas Electronics	EEPROM		8		RECTANGULAR	PLASTIC/EPOXY	YES			GULL WING									SMALL OUTLINE													DUAL		R-PDSO-G8							Not Qualified		I2C
R1EX24016ATA00I	Renesas Electronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.7		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	100	.65 mm	85 Cel		2KX8	2K	-40 Cel			1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.4 mm
X28HC64SZ-12	Renesas Electronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		8192 words	5			8	SMALL OUTLINE				1.27 mm	70 Cel		8KX8	8K	0 Cel		MATTE TIN		DUAL		R-PDSO-G28	3	5.5 V	2.65 mm			7.5 mm		5 ms		65536 bit	4.5 V			e3				17.9 mm	120 ns	5
R1EX25032ASA00G#U0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	4096 words	3.6		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	105 Cel		4KX8	4K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24064ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24064ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX24004ASAS0A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2.5 mA	512 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel			1010DDMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
R1EX25064ASA00A	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3.5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		8KX8	8K	-40 Cel				DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	3 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
X28HC64J-90T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5			8	CHIP CARRIER			100	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel				QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.43 mm	Not Qualified			65536 bit	4.5 V	SOFTWARE DATA PROTECTION; 64 BYTE PAGE WRITE; 100 YEARS DATA RETENTION						13.97 mm	90 ns	5
X28HC256JZ-12T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	120 ns	5
X28HC256JZ-90T1	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		QUAD		R-PQCC-J32	3	5.5 V	3.55 mm			11.43 mm	Not Qualified	5 ms		262144 bit	4.5 V			e3	30	260		13.97 mm	90 ns	5
R1EX24032ASAS0I	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		4KX8	4K	-40 Cel			1010DDDR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.73 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED	.000002 Amp	4.89 mm
X28HC256PZ-90	Renesas Electronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE				2.54 mm	70 Cel		32KX8	32K	0 Cel		MATTE TIN		DUAL		R-PDIP-T28		5.5 V	6.35 mm			15.24 mm		5 ms		262144 bit	4.5 V			e3				37.4 mm	90 ns	5
R1EX25002ASA00I#S0	Renesas Electronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.6			8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel				DUAL		R-PDSO-G8		5.5 V	1.73 mm		5 MHz	3.9 mm		5 ms	SPI	2048 bit	2.5 V	IT IS ALSO OPERATES IN 3MHZ CLOCK FREQUENCY AT 1.8V MIN SUPPLY			NOT SPECIFIED	NOT SPECIFIED		4.89 mm
X28HC256J-15T13	Renesas Electronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER				1.27 mm	70 Cel		32KX8	32K	0 Cel				QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm		5 ms		262144 bit	4.5 V							13.97 mm	150 ns	5
X25045VI-2.7	Renesas Electronics	EEPROM	INDUSTRIAL	14	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		512X8	512	-40 Cel				DUAL		R-PDSO-G14		5.5 V	1.2 mm		1 MHz	4.4 mm		10 ms	SPI	4096 bit	2.7 V	PROGRAMMABLE WATCHDOG TIMER; ACTIVE HIGH RESET						5 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.